富聪科技订单满¥1000免运费
关注我们:

单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
BAS16WE6433HTMA1

BAS16WE6433HTMA1

DIODE GEN PURP 80V 250MA SOT323

Infineon Technologies

5,131 -
BAS16WE6433HTMA1

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete Standard 80 V 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 1 µA @ 75 V 2pF @ 0V, 1MHz 250mA - - Surface Mount PG-SOT323 150°C (Max)
BAT 60B E6433

BAT 60B E6433

DIODE SCHOTTKY 10V 3A SOD323-2

Infineon Technologies

9,597 -
BAT 60B E6433

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 10 V 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 25 µA @ 8 V 30pF @ 5V, 1MHz 3A - - Surface Mount PG-SOD323-3D 150°C (Max)
IDH04S60CAKSA1

IDH04S60CAKSA1

DIODE SIL CARB 600V 4A TO220-2-2

Infineon Technologies

6,593 -
IDH04S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 1.9 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 130pF @ 1V, 1MHz 4A - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH05S60CAKSA1

IDH05S60CAKSA1

DIODE SIL CARB 600V 5A TO220-2-2

Infineon Technologies

2,175 -
IDH05S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz 5A - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH08S60CAKSA1

IDH08S60CAKSA1

DIODE SIL CARB 600V 8A TO220-2-2

Infineon Technologies

5,098 -
IDH08S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 600 V 310pF @ 1V, 1MHz 8A - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH12S60CAKSA1

IDH12S60CAKSA1

DIODE SIL CARB 600V 12A TO220-2

Infineon Technologies

8,966 -
IDH12S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 160 µA @ 600 V 530pF @ 1V, 1MHz 12A - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH16S60CAKSA1

IDH16S60CAKSA1

DIODE SIL CARB 600V 16A TO220-2

Infineon Technologies

3,535 -
IDH16S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 650pF @ 1V, 1MHz 16A - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
MMBD914LT3HTMA1

MMBD914LT3HTMA1

DIODE GEN PURP 100V 250MA SOT23

Infineon Technologies

4,777 -
MMBD914LT3HTMA1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Standard 100 V 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 75 V 2pF @ 0V, 1MHz 250mA - - Surface Mount PG-SOT23 150°C (Max)
IDD06SG60CXTMA2

IDD06SG60CXTMA2

DIODE SIL CARB 600V 6A TO252-3

Infineon Technologies

9,208 -
IDD06SG60CXTMA2

数据表

CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 2.3 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 130pF @ 1V, 1MHz 6A - - Surface Mount PG-TO252-3 -55°C ~ 175°C
SDB06S60

SDB06S60

DIODE SIL CARB 600V 6A TO263

Infineon Technologies

3,281 -
SDB06S60

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 300pF @ 0V, 1MHz 6A - - Surface Mount PG-TO263-2 -55°C ~ 175°C
共 685 条记录«上一页1... 4748495051525354...69下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户