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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BAS4002S02LRHE6327XTSA1DIODE SCHOTT 40V 200MA TSLP-2-17 Infineon Technologies |
9,297 | - |
|
数据表 |
- | SOD-882 | Tape & Reel (TR) | Obsolete | Schottky | 40 V | 550 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 40 V | 12pF @ 5V, 1MHz | 200mA | - | - | Surface Mount | PG-TSLP-2-17 | -55°C ~ 150°C |
|
BAT 54W E6327DIODE SCHOTTKY 30V 200MA SOT323 Infineon Technologies |
3,166 | - |
|
数据表 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | 200mA | - | - | Surface Mount | PG-SOT323 | 150°C (Max) |
|
IDD04SG60CXTMA1DIODE SIC 600V 5.6A TO252-31 Infineon Technologies |
9,941 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 600 V | 80pF @ 1V, 1MHz | 5.6A | - | - | Surface Mount | PG-TO252-3-11 | -55°C ~ 175°C |
|
|
IDD05SG60CXTMA1DIODE SIL CARB 600V 5A TO252-3 Infineon Technologies |
6,204 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 110pF @ 1V, 1MHz | 5A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDD06SG60CXTMA1DIODE SIL CARB 600V 6A TO252-3 Infineon Technologies |
7,200 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | 6A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDD08SG60CXTMA1DIODE SIL CARB 600V 8A TO252-3 Infineon Technologies |
7,387 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | 8A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDD09SG60CXTMA1DIODE SIL CARB 600V 9A TO252-3 Infineon Technologies |
5,336 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | 9A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDD10SG60CXTMA1DIODE SIL CARB 600V 10A TO252-3 Infineon Technologies |
2,520 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | 10A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDD12SG60CXTMA1DIODE SIL CARB 600V 12A TO252-3 Infineon Technologies |
2,593 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | 12A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDH02SG120XKSA1DIODE SIL CARB 1.2KV 2A TO220-2 Infineon Technologies |
3,403 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 48 µA @ 1200 V | 125pF @ 1V, 1MHz | 2A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
