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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH03SG60CXKSA1DIODE SIL CARB 600V 3A TO220-2 Infineon Technologies |
7,237 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | 3A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH04SG60CXKSA1DIODE SIL CARB 600V 4A TO220-2-2 Infineon Technologies |
7,979 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 600 V | 80pF @ 1V, 1MHz | 4A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH05S120AKSA1DIODE SIL CARB 1200V 5A TO220-2 Infineon Technologies |
8,182 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 250pF @ 1V, 1MHz | 5A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH06SG60CXKSA1DIODE SIL CARB 600V 6A TO220-2-2 Infineon Technologies |
6,974 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | 6A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH08S120AKSA1DIODE SIC 1.2KV 7.5A TO220 Infineon Technologies |
8,325 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 7.5 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 380pF @ 1V, 1MHz | 7.5A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH08SG60CXKSA1DIODE SIL CARB 600V 8A TO220-2-2 Infineon Technologies |
2,703 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | 8A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH09SG60CXKSA1DIODE SIL CARB 600V 9A TO220-2-2 Infineon Technologies |
2,540 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | 9A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH10SG60CXKSA1DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies |
2,590 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH12SG60CXKSA1DIODE SIL CARB 600V 12A TO220-2 Infineon Technologies |
3,333 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | 12A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
BAT165E6874HTMA1DIODE SCHOTT 40V 750MA SOD323-2 Infineon Technologies |
4,969 | - |
|
数据表 |
- | SC-76, SOD-323 | Tape & Reel (TR) | Active | Schottky | 40 V | 740 mV @ 750 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 40 V | 8.4pF @ 10V, 1MHz | 750mA | Automotive | AEC-Q101 | Surface Mount | PG-SOD323-2 | 150°C |
