订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SDT04S60DIODE SIL CARB 600V 4A TO220-2-2 Infineon Technologies |
9,688 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 150pF @ 0V, 1MHz | 4A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
SDT10S30DIODE SIL CARB 300V 10A TO220-2 Infineon Technologies |
7,464 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 300 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 300 V | 600pF @ 0V, 1MHz | 10A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
HFA15PB60PBFDIODE GP 600V 15A TO247AC Infineon Technologies |
2,749 | - |
|
数据表 |
HEXFRED® | TO-247-2 | Tube | Obsolete | Standard | 600 V | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | 15A | - | - | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
|
HFA15TB60PBFDIODE GEN PURP 600V 15A TO220AC Infineon Technologies |
5,825 | - |
|
数据表 |
HEXFRED® | TO-220-2 | Tube | Obsolete | Standard | 600 V | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | 15A | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
|
IDD03SG60CXTMA2DIODE SIL CARB 600V 3A TO252-3 Infineon Technologies |
2,539 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | 3A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDH04G65C5XKSA2DIODE SIL CARB 650V 4A TO220-2-1 Infineon Technologies |
1,631 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 130pF @ 1V, 1MHz | 4A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
IDL04G65C5XUMA2DIODE SIL CARBIDE 650V 4A VSON-4 Infineon Technologies |
3,064 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 130pF @ 1V, 1MHz | 4A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 175°C |
|
IDD04SG60CXTMA2DIODE SIL CARB 600V 4A TO252-3 Infineon Technologies |
8,891 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 600 V | 80pF @ 1V, 1MHz | 4A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDH06G65C6XKSA1DIODE SIL CARB 650V 16A TO220-2 Infineon Technologies |
576 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 420 V | 302pF @ 1V, 1MHz | 16A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
IDK06G65C5XTMA2DIODE SIL CARB 650V 6A TO263-2 Infineon Technologies |
3,154 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 1.1 mA @ 650 V | 190pF @ 1V, 1MHz | 6A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
