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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDK10G65C5XTMA2DIODE SIL CARB 650V 10A TO263-2 Infineon Technologies |
1,857 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | 300pF @ 1V, 1MHz | 10A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
IDL10G65C5XUMA2DIODE SIL CARB 650V 10A VSON-4 Infineon Technologies |
151 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
|
IDH10G65C5XKSA2DIODE SIL CARB 650V 10A TO220-1 Infineon Technologies |
1,046 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
IDK12G65C5XTMA2DIODE SIL CARB 650V 12A TO263-2 Infineon Technologies |
1,257 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | - | 360pF @ 1V, 1MHz | 12A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
|
IDL12G65C5XUMA2DIODE SIL CARB 650V 12A VSON-4 Infineon Technologies |
6,146 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | 12A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
|
IDWD150E65E7XKSA1DIODE GEN PURP 650V 200A TO247-2 Infineon Technologies |
328 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 650 V | 2.1 V @ 150 A | Fast Recovery =< 500ns, > 5A (Io) | 97 ns | 20 µA @ 650 V | - | 200A | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDDD20G65C6XTMA1DIODE SIL CARB 650V 51A HDSOP-10 Infineon Technologies |
606 | - |
|
数据表 |
CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | 0 ns | 67 µA @ 420 V | 970pF @ 1V, 1MHz | 51A | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
IDWD20G120C5XKSA1DIODE SIL CARB 1.2KV 62A TO247-2 Infineon Technologies |
240 | - |
|
数据表 |
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 166 µA @ 1200 V | 1368pF @ 1V, 1MHz | 62A | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
IDW30G65C5XKSA1DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies |
931 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 650 V | 860pF @ 1V, 1MHz | 30A | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
|
BAS 3020B E6327DIODE SCHOTTKY 30V 2A SOT363-PO Infineon Technologies |
5,502 | - |
|
数据表 |
- | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 600 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | 70pF @ 1V, 1MHz | 2A | - | - | Surface Mount | PG-SOT363-PO | -55°C ~ 125°C |
