订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SDP10S30DIODE SIL CARB 300V 10A TO220-3 Infineon Technologies |
8,076 | - |
|
数据表 |
CoolSiC™+ | TO-220-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 300 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 300 V | 600pF @ 0V, 1MHz | 10A | - | - | Through Hole | PG-TO220-3 | -55°C ~ 175°C |
|
SDT10S60DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies |
4,537 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 350 µA @ 600 V | 350pF @ 0V, 1MHz | 10A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
SIDC03D60F6X1SA2DIODE GP 600V 6A WAFER Infineon Technologies |
4,457 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.6 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 6A | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
|
SIDC04D60F6X1SA3DIODE GP 600V 9A WAFER Infineon Technologies |
6,676 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.6 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 9A | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
|
SIDC06D60E6X1SA3DIODE GP 600V 10A WAFER Infineon Technologies |
2,009 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.25 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 10A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
IDL08G65C5XUMA2DIODE SIL CARBIDE 650V 8A VSON-4 Infineon Technologies |
7,147 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 250pF @ 1V, 1MHz | 8A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
|
|
SIDC06D60F6X1SA3DIODE GP 600V 15A WAFER Infineon Technologies |
4,017 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.6 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 15A | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
|
SIDC07D60E6X1SA1DIODE GP 600V 15A WAFER Infineon Technologies |
4,060 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.25 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 250 µA @ 600 V | - | 15A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
SIDC07D60F6X1SA2DIODE GP 600V 22.5A WAFER Infineon Technologies |
6,249 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.6 V @ 22.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 22.5A | - | - | Surface Mount | Sawn on foil | -40°C ~ 150°C |
|
IDM08G120C5XTMA1DIODE SIL CARB 1.2KV 8A TO252-2 Infineon Technologies |
1,688 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.95 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 365pF @ 1V, 1MHz | 8A | - | - | Surface Mount | PG-TO252-2 | -55°C ~ 175°C |
