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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI4104DY-T1-GE3 MOSFET N-CH 100V 4.6A 8SO Vishay Siliconix	3,095	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.6A (Tc)	10V	105mOhm @ 5A, 10V	Surface Mount	4.5V @ 250µA	13 nC @ 10 V	100 V	±20V	446 pF @ 50 V	-	-	8-SOIC	-	2.5W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)
SI4628DY-T1-GE3 MOSFET N-CH 30V 38A 8SO Vishay Siliconix	2,219	-	询价单	数据表	SkyFET®, TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	4.5V, 10V	3mOhm @ 20A, 10V	Surface Mount	2.5V @ 1mA	87 nC @ 10 V	30 V	±20V	3450 pF @ 15 V	-	-	8-SOIC	-	3.5W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)
NVD5863NLT4G MOSFET N-CH 60V 14.9A DPAK onsemi	7,812	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14.9A (Ta), 82A (Tc)	4.5V, 10V	7.1mOhm @ 41A, 10V	Surface Mount	3V @ 250µA	70 nC @ 10 V	60 V	±20V	3850 pF @ 25 V	AEC-Q101	-	DPAK	Automotive	3.1W (Ta), 96W (Tc)	-55°C ~ 175°C (TJ)
AOD4504 MOSFET N-CH 200V 1.5A/6A TO252 Alpha & Omega Semiconductor Inc.	6,402	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.5A (Ta), 6A (Tc)	10V	400mOhm @ 3A, 10V	Surface Mount	3.7V @ 250µA	115 nC @ 10 V	200 V	±20V	328 pF @ 100 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 42.5W (Tc)	-55°C ~ 175°C (TJ)
SICW040N120H-BP SIC MOSFET,TO-247AB Micro Commercial Co	360	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	62A (Tc)	20V	52mOhm @ 30A, 20V	Through Hole	4.5V @ 40mA	229 nC @ 20 V	1200 V	+25V, -10V	3619 pF @ 800 V	-	-	TO-247AB	-	326W (Tc)	-55°C ~ 175°C (TJ)
E4M0060075J2-TR MOSFETS 1205 PF 131W 3.8V 50 NC Wolfspeed, Inc.	494	-	询价单	数据表	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	36A (Tc)	15V	78mOhm @ 13.4A, 15V	Surface Mount	3.8V @ 3.67mA	50 nC @ 15 V	750 V	+19V, -8V	1205 pF @ 500 V	AEC-Q101	-	TO-263-7	Automotive	131W (Tc)	-55°C ~ 175°C (TJ)
NVH4L050N65S3F SF3 FRFET AUTO 50MOHM TO-247-4L onsemi	405	-	询价单	数据表	SuperFET® III, FRFET®	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	50mOhm @ 29A, 10V	Through Hole	5V @ 1.7mA	123.8 nC @ 10 V	650 V	±30V	4855 pF @ 400 V	-	-	TO-247-4L	-	403W (Tc)	-55°C ~ 150°C (TJ)
SICW040N120H4-BP SIC MOSFET,TO-247-4 Micro Commercial Co	360	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	62A (Tc)	20V	52mOhm @ 30A, 20V	Through Hole	4.5V @ 40mA	229 nC @ 20 V	1200 V	+20V, -5V	3619 pF @ 800 V	-	-	TO-247-4	-	326W (Tc)	-55°C ~ 175°C (TJ)
E3M0160120K SICFET N-CH 1.2KV 17.9A TO-247-4 Wolfspeed, Inc.	287	-	询价单	数据表	E	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	17.9A (Tc)	15V	208mOhm @ 8.5A, 15V	Through Hole	3.6V @ 2.33mA	32 nC @ 15 V	1200 V	-8V, +19V	730 pF @ 1000 V	AEC-Q101	-	TO-247-4L	Automotive	103W (Tc)	-55°C ~ 175°C (TJ)
APT5017BVRG MOSFET N-CH 500V 30A TO247 Microchip Technology	243	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	-	170mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	300 nC @ 10 V	500 V	-	5280 pF @ 25 V	-	-	TO-247 [B]	-	-	-
NVH4L075N065SC1 SIC MOS TO247-4L 650V onsemi	240	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	38A (Tc)	15V, 18V	85mOhm @ 15A, 18V	Through Hole	4.3V @ 5mA	61 nC @ 18 V	650 V	+22V, -8V	1196 pF @ 325 V	AEC-Q101	-	TO-247-4L	Automotive	148W (Tc)	-55°C ~ 175°C (TJ)
SCTWA35N65G2V-4 DISCRETE STMicroelectronics	600	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	Through Hole	5V @ 1mA	73 nC @ 20 V	650 V	+18V, -5V	1370 pF @ 400 V	-	-	TO-247-4	-	240W (Tc)	-55°C ~ 200°C (TJ)
NTHL030N120M3S SILICON CARBIDE (SIC) MOSFET EL onsemi	351	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	73A (Tc)	18V	39mOhm @ 30A, 18V	Through Hole	4.4V @ 15mA	107 nC @ 18 V	1200 V	+22V, -10V	2430 pF @ 800 V	-	-	TO-247-3	-	313W (Tc)	-55°C ~ 175°C (TJ)
IMW65R033M2HXKSA1 IMW65R033M2HXKSA1 Infineon Technologies	369	-	询价单	数据表	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	53A (Tc)	15V, 20V	30mOhm @ 27.9A, 20V	Through Hole	5.6V @ 5.7mA	34 nC @ 18 V	650 V	+23V, -7V	1214 pF @ 400 V	-	-	PG-TO247-3-40	-	194W (Tc)	-55°C ~ 175°C (TJ)
TSM60NE048PW C0G MOSFET Taiwan Semiconductor Corporation	300	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	61A (Tc)	10V, 12V	44mOhm @ 20A, 12V	Through Hole	6V @ 4.6mA	114 nC @ 10 V	600 V	±30V	5023 pF @ 300 V	-	-	TO-247	-	431W (Tc)	-55°C ~ 150°C (TJ)
AOM065V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40.3A (Tc)	15V	85mOhm @ 10A, 15V	Through Hole	3.5V @ 10mA	62.3 nC @ 15 V	1200 V	+18V, -8V	1716 pF @ 800 V	-	-	TO-247-4L	-	187.5W (Tj)	-55°C ~ 175°C (TJ)
IMT40R015M2HXTMA1 SIC-MOS Infineon Technologies	1,942	-	询价单	数据表	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	11.7A (Ta), 111A (Tc)	15V, 18V	19.1mOhm @ 27.1A, 18V	Surface Mount	5.6V @ 9.7mA	62 nC @ 18 V	400 V	+23V, -7V	2730 pF @ 200 V	-	-	PG-HSOF-8-2	-	3.8W (Ta), 341W (Tc)	-55°C ~ 175°C (TJ)
GAN039-650NTBJ GAN CASCODE FETS Nexperia USA Inc.	948	-	询价单	数据表	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	58.5A (Ta)	10V	39mOhm @ 32A, 10V	Surface Mount	4.6V @ 1mA	26 nC @ 10 V	650 V	±20V	1980 pF @ 400 V	-	-	CCPAK1212i	-	250W (Ta)	-55°C ~ 150°C (TJ)
R6086YNZ4C13 NCH 600V 86A, TO-247, POWER MOSF Rohm Semiconductor	521	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	86A (Tc)	10V, 12V	44mOhm @ 17A, 12V	Through Hole	6V @ 4.6mA	110 nC @ 10 V	600 V	±30V	5100 pF @ 100 V	-	-	TO-247G	-	781W (Tc)	150°C (TJ)
IPDQ60R016CM8XTMA1 IPDQ60R016CM8XTMA1 Infineon Technologies	720	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	135A (Tc)	10V	16mOhm @ 62.5A, 10V	Surface Mount	4.7V @ 1.48mA	171 nC @ 10 V	600 V	±20V	7545 pF @ 400 V	-	-	PG-HDSOP-22	-	625W (Tc)	-55°C ~ 150°C (TJ)

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