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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RSQ025P03TR

RSQ025P03TR

MOSFET P-CH 30V 2.5A TSMT6

Rohm Semiconductor

6,665 -
RSQ025P03TR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4V, 10V 110mOhm @ 2.5A, 10V Surface Mount 2.5V @ 1mA 4.4 nC @ 5 V 30 V ±20V 320 pF @ 10 V - - TSMT6 (SC-95) - 1.25W (Ta) 150°C (TJ)
FDC2512

FDC2512

MOSFET N-CH 150V 1.4A SUPERSOT6

onsemi

9,552 -
FDC2512

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Ta) 6V, 10V 425mOhm @ 1.4A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 150 V ±20V 344 pF @ 75 V - - SuperSOT™-6 - 1.6W (Ta) -55°C ~ 150°C (TJ)
FQD9N25TM

FQD9N25TM

MOSFET N-CH 250V 7.4A DPAK

onsemi

9,767 -
FQD9N25TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V Surface Mount 5V @ 250µA 20 nC @ 10 V 250 V ±30V 700 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
SIB412DK-T1-E3

SIB412DK-T1-E3

MOSFET N-CH 20V 9A PPAK SC75-6

Vishay Siliconix

2,178 -
SIB412DK-T1-E3

数据表

TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 1.8V, 4.5V 34mOhm @ 6.6A, 4.5V Surface Mount 1V @ 250µA 10.16 nC @ 5 V 20 V ±8V 535 pF @ 10 V - - PowerPAK® SC-75-6 - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
TPCC8001-H(TE12LQM

TPCC8001-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage

3,588 -
TPCC8001-H(TE12LQM

数据表

U-MOSV-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V Surface Mount 2.5V @ 1mA 27 nC @ 10 V 30 V ±20V 2500 pF @ 10 V - - 8-TSON Advance (3.3x3.3) - 700mW (Ta), 30W (Tc) 150°C (TJ)
TPCC8002-H(TE12LQM

TPCC8002-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage

9,408 -
TPCC8002-H(TE12LQM

数据表

U-MOSV-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V Surface Mount 2.5V @ 1mA 27 nC @ 10 V 30 V ±20V 2500 pF @ 10 V - - 8-TSON Advance (3.3x3.3) - 700mW (Ta), 30W (Tc) 150°C (TJ)
SUD08P06-155L-E3

SUD08P06-155L-E3

MOSFET P-CH 60V 8.4A TO252

Vishay Siliconix

2,277 -
SUD08P06-155L-E3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8.4A (Tc) 4.5V, 10V 155mOhm @ 5A, 10V Surface Mount 3V @ 250µA 19 nC @ 10 V 60 V ±20V 450 pF @ 25 V - - TO-252AA - 2W (Ta), 25W (Tc) -55°C ~ 175°C (TJ)
STQ2NK60ZR-AP

STQ2NK60ZR-AP

MOSFET N-CH 600V 400MA TO92-3

STMicroelectronics

5,161 -
STQ2NK60ZR-AP

数据表

SuperMESH™ TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 400mA (Tc) 10V 8Ohm @ 700mA, 10V Through Hole 4.5V @ 50µA 10 nC @ 10 V 600 V ±30V 170 pF @ 25 V - - TO-92-3 - 3W (Tc) -55°C ~ 150°C (TJ)
AON7460

AON7460

MOSFET N-CH 300V 1.2A/4A 8DFN

Alpha & Omega Semiconductor Inc.

8,975 -
AON7460

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.2A (Ta), 4A (Tc) 10V 830mOhm @ 1.2A, 10V Surface Mount 4.5V @ 250µA 8.2 nC @ 10 V 300 V ±30V 380 pF @ 25 V - - 8-DFN-EP (3x3) - 3.1W (Ta), 33W (Tc) -50°C ~ 150°C (TJ)
IPD65R950CFDBTMA1

IPD65R950CFDBTMA1

MOSFET N-CH 650V 3.9A TO252-3

Infineon Technologies

3,391 -
IPD65R950CFDBTMA1

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.9A (Tc) 10V 950mOhm @ 1.5A, 10V Surface Mount 4.5V @ 200µA 14.1 nC @ 10 V 650 V ±20V 380 pF @ 100 V - - PG-TO252-3 - 36.7W (Tc) -55°C ~ 150°C (TJ)
NTR3A30PZT1G

NTR3A30PZT1G

MOSFET P-CH 20V 3A SOT23-3

onsemi

4,032 -
NTR3A30PZT1G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3A (Ta) 1.8V, 4.5V 38mOhm @ 3A, 4.5V Surface Mount 1V @ 250µA 17.6 nC @ 4.5 V 20 V ±8V 1651 pF @ 15 V - - SOT-23-3 (TO-236) - 480mW (Ta) -55°C ~ 150°C (TJ)
RCD051N20TL

RCD051N20TL

MOSFET N-CH 200V 5A CPT3

Rohm Semiconductor

7,988 -
RCD051N20TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 760mOhm @ 2.5A, 10V Surface Mount 5.25V @ 1mA 8.3 nC @ 10 V 200 V ±30V 330 pF @ 25 V - - CPT3 - 850mW (Ta), 20W (Tc) 150°C (TJ)
PJD12P06_L2_00001

PJD12P06_L2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,842 -
PJD12P06_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.6A (Ta), 12A (Tc) 10V 155mOhm @ 6A, 10V Surface Mount 4V @ 250µA 10.9 nC @ 10 V 60 V ±20V 385 pF @ 25 V - - TO-252AA - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
PJD2NA60_R2_00001

PJD2NA60_R2_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

7,249 -
PJD2NA60_R2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 4.4Ohm @ 1A, 10V Surface Mount 4V @ 250µA 5.7 nC @ 10 V 600 V ±30V 257 pF @ 25 V - - TO-252AA - - -55°C ~ 150°C (TJ)
PJQ5448_R2_00001

PJQ5448_R2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,717 -
PJQ5448_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.6A (Ta), 50A (Tc) 4.5V, 10V 11mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 10 nC @ 4.5 V 40 V ±20V 1040 pF @ 20 V - - DFN5060-8 - 2W (Ta), 54W (Tc) -55°C ~ 150°C (TJ)
PJD2NA60_L2_00001

PJD2NA60_L2_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

7,838 -
PJD2NA60_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 4.4Ohm @ 1A, 10V Surface Mount 4V @ 250µA 5.7 nC @ 10 V 600 V ±30V 257 pF @ 25 V - - TO-252AA - 34W (Tc) -55°C ~ 150°C (TJ)
PJD3NA50_L2_00001

PJD3NA50_L2_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

7,042 -
PJD3NA50_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3.2Ohm @ 1.5A, 10V Surface Mount 4V @ 250µA 6.5 nC @ 10 V 500 V ±30V 260 pF @ 25 V - - TO-252AA - 34W (Tc) -55°C ~ 150°C (TJ)
IPB70P04P409ATMA1

IPB70P04P409ATMA1

MOSFET N-CH 40V 72A D2PAK

Infineon Technologies

9,694 -
IPB70P04P409ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 72A (Tc) 10V 9.1mOhm @ 70A, 10V Surface Mount 4V @ 120µA 70 nC @ 10 V 40 V ±20V 4810 pF @ 25 V AEC-Q101 - PG-TO263-3 Automotive 75W (Tc) -55°C ~ 175°C (TJ)
IPB70P04P409ATMA2

IPB70P04P409ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies

9,345 -
IPB70P04P409ATMA2

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 72A (Tc) 10V 9.1mOhm @ 70A, 10V Surface Mount 4V @ 120µA 70 nC @ 10 V 40 V ±20V 4810 pF @ 25 V - - PG-TO263-3-2 - 75W (Tc) -55°C ~ 175°C (TJ)
SCT3080ARC15

SCT3080ARC15

650V, 30A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

439 -
SCT3080ARC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 30A (Tj) 18V 104mOhm @ 10A, 18V Through Hole 5.6V @ 5mA 48 nC @ 18 V 650 V +22V, -4V 571 pF @ 500 V - - TO-247-4L - 134W 175°C (TJ)
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