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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFZ24STRLPBF MOSFET N-CH 60V 17A D2PAK Vishay Siliconix	7,950	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	100mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	25 nC @ 10 V	60 V	±20V	640 pF @ 25 V	-	-	D2PAK	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)
IRFZ44VZSPBF MOSFET N-CH 60V 57A D2PAK Infineon Technologies	5,325	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	12mOhm @ 34A, 10V	Surface Mount	4V @ 250µA	65 nC @ 10 V	60 V	±20V	1690 pF @ 25 V	-	-	D2PAK	-	92W (Tc)	-55°C ~ 175°C (TJ)
IPWS65R022CFD7AXKSA1 AUTOMOTIVE_COOLMOS PG-TO247-3 Infineon Technologies	238	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	96A (Tc)	10V	22mOhm @ 58.2A, 10V	Through Hole	4.5V @ 2.91mA	234 nC @ 10 V	650 V	±30V	11659 pF @ 400 V	-	-	PG-TO247-3-31	-	446W (Tc)	-40°C ~ 150°C (TJ)
TSM033NA03CR RLG MOSFET N-CH 30V 129A 8PDFN Taiwan Semiconductor Corporation	20	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	129A (Tc)	4.5V, 10V	3.3mOhm @ 21A, 10V	Surface Mount	2.5V @ 250µA	31 nC @ 10 V	30 V	±20V	1850 pF @ 15 V	-	-	8-PDFN (5x6)	-	96W (Tc)	-55°C ~ 150°C (TJ)
IRF7471TR MOSFET N-CH 40V 10A 8SO Infineon Technologies	8,773	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	4.5V, 10V	13mOhm @ 10A, 10V	Surface Mount	3V @ 250µA	32 nC @ 4.5 V	40 V	±20V	2820 pF @ 20 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
S3M0040120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	65A (Tc)	18V	52mOhm @ 40A, 18V	Through Hole	4V @ 16mA	143 nC @ 18 V	1200 V	+20V, -8V	2844 pF @ 1000 V	-	-	TO-247AD	-	130W (Tc)	-55°C ~ 175°C (TJ)
S2M0040120K-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tj)	20V	52mOhm @ 40A, 20V	Through Hole	4V @ 10mA	92.1 nC @ 20 V	1200 V	+20V, -5V	1904 pF @ 1000 V	-	-	TO-247-4	-	348W (Tc)	-55°C ~ 175°C (TJ)
IPDQ60R025CFD7XTMA1 HIGH POWER_NEW Infineon Technologies	725	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	25mOhm @ 32.6A, 10V	Surface Mount	4.5V @ 1.63mA	141 nC @ 10 V	600 V	±20V	5626 pF @ 400 V	-	-	PG-HDSOP-22-1	-	446W (Tc)	-55°C ~ 150°C (TJ)
G3F33MT06J-TR 650V 27M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	80A (Tc)	15V, 18V	38mOhm @ 26A, 18V	Surface Mount	4.3V @ 12mA	81 nC @ 18 V	650 V	+22V, -10V	2394 pF @ 400 V	AEC-Q101	-	TO-263-7	Automotive	261W (Tc)	-55°C ~ 175°C (TJ)
G3F45MT06K 650V 40M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	52A (Tc)	15V, 18V	54mOhm @ 20A, 18V	Through Hole	4.3V @ 8mA	55 nC @ 18 V	650 V	+22V, -10V	1640 pF @ 400 V	AEC-Q101	-	TO-247-4	Automotive	167W (Tc)	-55°C ~ 175°C (TJ)
AIMZHN120R080M1TXKSA1 SIC_DISCRETE Infineon Technologies	233	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	31A (Tc)	18V, 20V	100mOhm @ 10A, 20V	Through Hole	5.1V @ 3.3mA	24 nC @ 20 V	1200 V	+23V, -5V	671 pF @ 800 V	AEC-Q101	-	PG-TO247-4-14	Automotive	169W (Tc)	-55°C ~ 175°C (TJ)
SCT055HU65G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	523	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	30A (Tc)	15V, 18V	72mOhm @ 15A, 18V	Surface Mount	4.2V @ 1mA	29 nC @ 18 V	650 V	+22V, -10V	721 pF @ 400 V	AEC-Q101	-	HU3PAK	Automotive	185W (Tc)	-55°C ~ 175°C (TJ)
STY60NK30Z MOSFET N-CH 300V 60A MAX247 STMicroelectronics	490	-	询价单	数据表	SuperMESH™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	45mOhm @ 30A, 10V	Through Hole	4.5V @ 100µA	220 nC @ 10 V	300 V	±30V	7200 pF @ 25 V	-	-	MAX247™	-	450W (Tc)	-55°C ~ 150°C (TJ)
NSF060120D7A0J NSF060120D7A0/SOT8070/TO263-7L Nexperia USA Inc.	800	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NSF060120L3A0Q NSF060120L3A0/SOT429-2/TO247-3 Nexperia USA Inc.	450	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOM065V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40.3A (Tc)	15V	85mOhm @ 10A, 15V	Through Hole	3.5V @ 10mA	62.3 nC @ 15 V	1200 V	+15V, -5V	1716 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	187.5W (Ta)	-55°C ~ 175°C (TJ)
S3M0040120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	65A (Tc)	18V	52mOhm @ 40A, 18V	Through Hole	4V @ 16mA	143 nC @ 18 V	1200 V	+22V, -8V	2844 pF @ 1000 V	-	-	TO-247-4	-	130W (Tc)	-55°C ~ 175°C (TJ)
C3M0075120K1 MOSFET N-CH 1200V 32A TO247-4L Wolfspeed, Inc.	345	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	32A (Tc)	15V	97.5mOhm @ 17.9A, 15V	Through Hole	3.8V @ 5mA	55 nC @ 15 V	1200 V	+19V, -8V	1480 pF @ 1000 V	-	-	TO-247-4L	-	145W (Tc)	-40°C ~ 175°C (TJ)
SICW080N120Y4-BP N-CHANNEL MOSFET,TO-247-4 Micro Commercial Co	338	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	39A	18V	85mOhm @ 20A, 18V	Through Hole	3.6V @ 5mA	41 nC @ 18 V	1200 V	+22V, -8V	890 pF @ 1000 V	-	-	TO-247-4	-	223W (Tc)	-55°C ~ 175°C (TJ)
IRLR3103TRPBF MOSFET N-CH 30V 55A DPAK Infineon Technologies	9,891	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	4.5V, 10V	19mOhm @ 33A, 10V	Surface Mount	1V @ 250µA	50 nC @ 4.5 V	30 V	±16V	1600 pF @ 25 V	-	-	TO-252AA (DPAK)	-	107W (Tc)	-55°C ~ 175°C (TJ)

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