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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G3F75MT12J-TR 1200V 75M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	31A (Tc)	18V	100mOhm @ 12A, 18V	Surface Mount	4.3V @ 9mA	48 nC @ 18 V	1200 V	+22V, -10V	988 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	140W (Tc)	-55°C ~ 175°C (TJ)
IXTA1N200P3HV-TRL MOSFET N-CH 2000V 1A TO263HV Littelfuse Inc.	789	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1A (Tc)	10V	40Ohm @ 500mA, 10V	Surface Mount	4V @ 250µA	23.5 nC @ 10 V	2000 V	±20V	646 pF @ 25 V	-	-	TO-263HV	-	125W (Tc)	-55°C ~ 150°C (TJ)
C3M0120065J-TR SIC, MOSFET, 120M, 650V, TO-263- Wolfspeed, Inc.	1,590	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	21A (Tc)	15V	157mOhm @ 6.76A, 15V	Surface Mount	3.6V @ 1.86mA	26 nC @ 15 V	650 V	+19V, -8V	640 pF @ 400 V	-	-	TO-263-7	-	86W (Tc)	-40°C ~ 175°C (TJ)
IMT65R048M1HXUMA1 SILICON CARBIDE MOSFET Infineon Technologies	1,942	-	询价单	数据表	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	-	SiCFET (Silicon Carbide)	-	18V	-	Surface Mount	-	-	650 V	-	-	-	-	PG-HSOF-8-2	-	-	-
SCT3080ARHRC15 650V, 30A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	816	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	18V	104mOhm @ 10A, 18V	Through Hole	5.6V @ 5mA	48 nC @ 18 V	650 V	+22V, -4V	571 pF @ 500 V	AEC-Q101	-	TO-247-4L	Automotive	134W	175°C (TJ)
SICW025N065H4-BP SIC MOSFET,TO-247-4 Micro Commercial Co	360	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	107A (Tc)	18V	30mOhm @ 50A, 18V	Through Hole	4.5V @ 50mA	275 nC @ 18 V	650 V	+18V, -5V	5740 pF @ 400 V	-	-	TO-247-4	-	375W (Tc)	-55°C ~ 175°C (TJ)
AIMZA75R060M1HXKSA1 AUTOMOTIVE_SICMOS Infineon Technologies	239	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	32A (Tj)	15V, 20V	55mOhm @ 11.1A, 20V	Through Hole	5.6V @ 4mA	23 nC @ 18 V	750 V	+23V, -5V	779 pF @ 500 V	AEC-Q101	-	PG-TO247-4	Automotive	144W (Tc)	-55°C ~ 175°C (TJ)
SCT4045DWATL 750V, 31A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	976	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	31A (Tc)	18V	59mOhm @ 17A, 18V	Surface Mount	4.8V @ 8.89mA	63 nC @ 18 V	750 V	+21V, -4V	1460 pF @ 500 V	-	-	TO-263-7LA	-	-	175°C (TJ)
G3F75MT12K 1200V 75M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	30A (Tc)	18V	100mOhm @ 12A, 18V	Through Hole	4.3V @ 9mA	48 nC @ 18 V	1200 V	+22V, -10V	988 pF @ 800 V	AEC-Q101	-	TO-247-4	Automotive	127W (Tc)	-55°C ~ 175°C (TJ)
CDFG6558N TR13 PBFREE SURFACE MOUNT MOSFET Central Semiconductor Corp	2,480	-	询价单	数据表	-	8-VDFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel, Depletion Mode	GaNFET (Gallium Nitride)	29A (Tc)	6V	80mOhm @ 8A, 6V	Surface Mount	2.5V @ 30.7mA	6.2 nC @ 0 V	650 V	+7V, -6V	225 pF @ 400 V	-	-	8-DFN (8x8)	-	1.1W (Ta), 188W (Tc)	-55°C ~ 150°C (TJ)
NVMTS0D7N06CTXG MOSFET N-CH 60V 60.5A/464A 8DFNW onsemi	2,635	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60.5A (Ta), 464A (Tc)	10V	0.72mOhm @ 50A, 10V	Surface Mount	4V @ 250µA	152 nC @ 10 V	60 V	±20V	11535 pF @ 30 V	AEC-Q101	-	8-DFNW (8.3x8.4)	Automotive	5W (Ta), 294.6W (Tc)	-55°C ~ 175°C (TJ)
STWA60N043DM9 N-CHANNEL 600 V, 38 MOHM TYP., 5 STMicroelectronics	144	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	43mOhm @ 28A, 10V	Through Hole	4.5V @ 250µA	78.6 nC @ 10 V	600 V	±30V	4675 pF @ 400 V	-	-	TO-247 Long Leads	-	312W (Tc)	-55°C ~ 150°C (TJ)
STW69N65M5 MOSFET N-CH 650V 58A TO247 STMicroelectronics	477	-	询价单	数据表	MDmesh™ V	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	45mOhm @ 29A, 10V	Through Hole	5V @ 250µA	143 nC @ 10 V	650 V	±25V	6420 pF @ 100 V	-	-	TO-247-3	-	330W (Tc)	150°C (TJ)
MXB12R600DPHFC MOSFET N-CH 600V 15A IXYS	243	-	询价单	数据表	-	ISOPLUSi5-PAK™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	-	-	Through Hole	-	-	650 V	-	-	-	-	ISOPLUS i4-PAC™	-	-	-
IRLU3714Z MOSFET N-CH 20V 37A I-PAK Infineon Technologies	7,644	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	37A (Tc)	4.5V, 10V	15mOhm @ 15A, 10V	Through Hole	2.55V @ 250µA	7.1 nC @ 4.5 V	20 V	±20V	560 pF @ 10 V	-	-	IPAK	-	35W (Tc)	-55°C ~ 175°C (TJ)
IPDQ65R029CFD7XTMA1 HIGH POWER_NEW Infineon Technologies	734	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	85A (Tc)	10V	29mOhm @ 35.8A, 10V	Surface Mount	4.5V @ 1.79mA	139 nC @ 10 V	650 V	±20V	7149 pF @ 400 V	-	-	PG-HDSOP-22-1	-	463W (Tc)	-55°C ~ 150°C (TJ)
IRF3205ZLPBF MOSFET N-CH 55V 75A TO262 Infineon Technologies	8,185	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	6.5mOhm @ 66A, 10V	Through Hole	4V @ 250µA	110 nC @ 10 V	55 V	±20V	3450 pF @ 25 V	-	-	TO-262	-	170W (Tc)	-55°C ~ 175°C (TJ)
NVH4L095N065SC1 SILICON CARBIDE (SIC) MOSFET, NC onsemi	445	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	31A (Tc)	15V, 18V	105mOhm @ 12A, 18V	Through Hole	4.3V @ 4mA	50 nC @ 18 V	650 V	+22V, -8V	956 pF @ 325 V	AEC-Q101	-	TO-247-4L	Automotive	129W (Tc)	-55°C ~ 175°C (TJ)
BMS4003 MOSFET N-CH 100V 18A TO220ML onsemi	7,995	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	10V	65mOhm @ 9A, 10V	Through Hole	5V @ 1mA	11.4 nC @ 10 V	100 V	±30V	680 pF @ 20 V	-	-	TO-220ML	-	2W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
IMZA75R040M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	235	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	44A (Tj)	15V, 20V	37mOhm @ 16.6A, 20V	Through Hole	5.6V @ 6mA	34 nC @ 18 V	750 V	+23V, -5V	1135 pF @ 500 V	-	-	PG-TO247-4	-	185W (Tc)	-55°C ~ 175°C (TJ)

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