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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFZ34NSTRR MOSFET N-CH 55V 29A D2PAK Infineon Technologies	5,418	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	40mOhm @ 16A, 10V	Surface Mount	4V @ 250µA	34 nC @ 10 V	55 V	±20V	700 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)
AIMCQ120R060M1TXTMA1 SIC_DISCRETE Infineon Technologies	850	-	询价单	数据表	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	44A (Tc)	18V, 20V	75mOhm @ 13A, 20V	Surface Mount	5.1V @ 4.3mA	32 nC @ 20 V	1200 V	+25V, -10V	880 pF @ 800 V	AEC-Q101	-	PG-HDSOP-22	Automotive	259W (Tc)	-55°C ~ 175°C (TJ)
IRF720STRR MOSFET N-CH 400V 3.3A D2PAK Vishay Siliconix	9,107	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.3A (Tc)	10V	1.8Ohm @ 2A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	400 V	±20V	410 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
G3F60MT06D 650V 55M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHA6N80E-GE3 MOSFET N-CH 800V 5.4A TO220 Vishay Siliconix	3,283	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.4A (Tc)	10V	940mOhm @ 3A, 10V	Through Hole	4V @ 250µA	44 nC @ 10 V	800 V	±30V	827 pF @ 100 V	-	-	TO-220 Full Pack	-	31W (Tc)	-55°C ~ 150°C (TJ)
SCT4062KWATL 1200V, 24A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	999	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	24A (Tc)	18V	81mOhm @ 12A, 18V	Surface Mount	4.8V @ 6.45mA	64 nC @ 18 V	1200 V	+21V, -4V	1498 pF @ 800 V	-	-	TO-263-7LA	-	-	175°C (TJ)
SCT4045DWAHRTL 750V, 31A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	990	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	31A (Tc)	18V	59mOhm @ 17A, 18V	Surface Mount	4.8V @ 8.89mA	63 nC @ 18 V	750 V	+21V, -4V	1460 pF @ 500 V	AEC-Q101	-	TO-263-7LA	Automotive	-	175°C (TJ)
SCT4062KWAHRTL 1200V, 24A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	956	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	24A (Tc)	18V	81mOhm @ 12A, 18V	Surface Mount	4.8V @ 6.45mA	64 nC @ 18 V	1200 V	+21V, -4V	1498 pF @ 800 V	AEC-Q101	-	TO-263-7LA	Automotive	93W	175°C (TJ)
MSC080SMA120SCT/R MOSFET SIC 1200 V 80 MOHM PSMT Microchip Technology	1,300	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOW66616 MOSFET N-CH 60V 33A/140A TO262 Alpha & Omega Semiconductor Inc.	3,093	-	询价单	数据表	AlphaSGT™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	33A (Ta), 140A (Tc)	6V, 10V	3.2mOhm @ 20A, 10V	Through Hole	3.4V @ 250µA	60 nC @ 10 V	60 V	±20V	2870 pF @ 30 V	-	-	TO-262	-	6.2W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)
DMTH10H2M2LPSWQ-13 MOSFET BVDSS: 61V~100V POWERDI50 Diodes Incorporated	3,615	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	153A (Tc)	4.5V, 10V	3.2mOhm @ 30A, 10V	Surface Mount, Wettable Flank	2.5V @ 250µA	116 nC @ 10 V	100 V	±20V	6239 pF @ 50 V	AEC-Q101	-	PowerDI5060-8 (Type UX)	Automotive	4W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
STF9NM50N MOSFET N-CH 500V 5A TO220FP STMicroelectronics	6,797	-	询价单	数据表	MDmesh™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	560mOhm @ 3.7A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	500 V	±25V	570 pF @ 50 V	-	-	TO-220FP	-	25W (Tc)	150°C (TJ)
IRFI9Z24N MOSFET P-CH 55V 9.5A TO220AB FP Infineon Technologies	5,142	-	询价单	数据表	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	9.5A (Tc)	10V	175mOhm @ 5.4A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	55 V	±20V	350 pF @ 25 V	-	-	TO-220AB Full-Pak	-	29W (Tc)	-
AOV11S60 MOSFET N-CH 600V 650MA/8A 4DFN Alpha & Omega Semiconductor Inc.	3,319	-	询价单	数据表	aMOS™	4-PowerTSFN	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650mA (Ta), 8A (Tc)	10V	500mOhm @ 3.8A, 10V	Surface Mount	4.1V @ 250µA	11 nC @ 10 V	600 V	±30V	545 pF @ 100 V	-	-	4-DFN (8x8)	-	8.3W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)
MSC080SMA120SDT/R MOSFET SIC 1200 V 80 MOHM TO-263 Microchip Technology	800	-	询价单	数据表	mSiC™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Bulk	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	35A (Tc)	20V	100mOhm @ 15A, 20V	Surface Mount	2.8V @ 1mA	64 nC @ 20 V	1200 V	+23V, -10V	838 pF @ 1000 V	-	-	TO-268	-	182W (Tc)	-55°C ~ 175°C (TJ)
SUP18N15-95-E3 MOSFET N-CH 150V 18A TO220-3 Vishay Siliconix	7,171	-	询价单	数据表	TrenchFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	6V, 10V	95mOhm @ 15A, 10V	Through Hole	2V @ 250µA (Min)	25 nC @ 10 V	150 V	±20V	900 pF @ 25 V	-	-	TO-220AB	-	88W (Tc)	-55°C ~ 175°C (TJ)
G3F60MT06K 650V 55M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	42A (Tc)	15V, 18V	75mOhm @ 15A, 18V	Through Hole	4.3V @ 7mA	45 nC @ 18 V	650 V	+22V, -10V	1322 pF @ 400 V	AEC-Q101	-	TO-247-4	Automotive	140W (Tc)	-55°C ~ 175°C (TJ)
TSM60NC390CI C0G 600V, 11A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	7,897	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	390mOhm @ 3.8A, 10V	Through Hole	5V @ 1mA	21.3 nC @ 10 V	600 V	±20V	832 pF @ 25 V	-	-	ITO-220	-	78W (Tc)	-55°C ~ 150°C (TJ)
AIMZH120R160M1TXKSA1 SIC_DISCRETE Infineon Technologies	207	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	18V, 20V	200mOhm @ 5A, 20V	Through Hole	5.1V @ 1.5mA	14 nC @ 20 V	1200 V	+23V, -5V	350 pF @ 800 V	AEC-Q101	-	PG-TO247-4-11	Automotive	109W (Tc)	-55°C ~ 175°C (TJ)
IMZC120R040M2HXKSA1 IMZC120R040M2HXKSA1 Infineon Technologies	240	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	48A (Tc)	15V, 18V	40mOhm @ 18A, 18V	Through Hole	5.1V @ 5.5mA	39 nC @ 18 V	1200 V	+23V, -7V	1310 pF @ 800 V	-	-	PG-TO247-4-17	-	218W (Tc)	-55°C ~ 175°C (TJ)

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