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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G3F45MT06J-TR 650V 40M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	56A (Tc)	15V, 18V	54mOhm @ 20A, 18V	Surface Mount	4.3V @ 8mA	55 nC @ 18 V	650 V	+22V, -10V	1640 pF @ 400 V	AEC-Q101	-	TO-263-7	Automotive	187W (Tc)	-55°C ~ 175°C (TJ)
G3F65MT12J-TR 1200V 65M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	37A (Tc)	18V	86mOhm @ 15A, 18V	Surface Mount	4.3V @ 10mA	55 nC @ 18 V	1200 V	+22V, -10V	1298 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	171W (Tc)	-55°C ~ 175°C (TJ)
R6061YNZ4C13 NCH 600V 61A, TO-247, POWER MOSF Rohm Semiconductor	588	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	61A (Tc)	10V, 12V	60mOhm @ 13A, 12V	Through Hole	6V @ 3.5mA	76 nC @ 10 V	600 V	±30V	3700 pF @ 100 V	-	-	TO-247	-	568W (Tc)	150°C (TJ)
IPT60T022S7XTMA1 HIGH POWER_NEW Infineon Technologies	218	-	询价单	数据表	CoolMOS™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tj)	12V	22mOhm @ 23A, 12V	Surface Mount	4.5V @ 1.43mA	150 nC @ 12 V	600 V	±20V	5640 pF @ 300 V	-	-	PG-HSOF-8-2	-	390W (Tc)	-55°C ~ 150°C (TJ)
G3F65MT12K 1200V 65M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	35A (Tc)	18V	86mOhm @ 15A, 18V	Through Hole	4.3V @ 10mA	55 nC @ 18 V	1200 V	+22V, -10V	1298 pF @ 800 V	AEC-Q101	-	TO-247-4	Automotive	153W (Tc)	-55°C ~ 175°C (TJ)
C3M0060075K1 SICFET N-CH 750V 35A TO247 Wolfspeed, Inc.	389	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	35A (Tc)	15V	78mOhm @ 13.4A, 15V	Through Hole	3.8V @ 3.67mA	52 nC @ 15 V	750 V	-8V, +19V	1203 pF @ 500 V	-	-	TO-247-4L	-	126W (Tc)	-40°C ~ 175°C (TJ)
C3M0160120J-TR SIC, MOSFET, 160M, 1200V, TO-263 Wolfspeed, Inc.	300	-	询价单	数据表	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	15V	208mOhm @ 8.5A, 15V	Surface Mount	3.6V @ 2.33mA	24 nC @ 15 V	1200 V	+15V, -4V	632 pF @ 1000 V	-	-	TO-263-7	-	90W (Tc)	-55°C ~ 150°C (TJ)
C3M0160120K1 MOSFET N-CH 1200V 17.9A TO247-4L Wolfspeed, Inc.	229	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	17.9A (Tc)	15V	208mOhm @ 8.5A, 15V	Through Hole	3.8V @ 2.33mA	32 nC @ 15 V	1200 V	+19V, -8V	730 pF @ 1000 V	-	-	TO-247-4L	-	103W (Tc)	-40°C ~ 175°C (TJ)
IPQC60T022S7XTMA1 HIGH POWER_NEW Infineon Technologies	750	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	12V	22mOhm @ 23A, 12V	Surface Mount	4.5V @ 1.43mA	150 nC @ 12 V	600 V	±20V	5640 pF @ 300 V	-	-	PG-HDSOP-22-1	-	416W (Tc)	-55°C ~ 150°C (TJ)
NVHL075N065SC1 SILICON CARBIDE (SIC) MOSFET, NC onsemi	446	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	38A (Tc)	15V, 18V	85mOhm @ 15A, 18V	Through Hole	4.3V @ 5mA	61 nC @ 18 V	650 V	+22V, -8V	1196 pF @ 325 V	AEC-Q101	-	TO-247-3	Automotive	148W (Tc)	-55°C ~ 175°C (TJ)
STL57N65M5 MOSFET N-CH 650V 4.3A 8POWERFLAT STMicroelectronics	5,445	-	询价单	数据表	MDmesh™ V	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Ta), 22.5A (Tc)	10V	69mOhm @ 20A, 10V	Surface Mount	5V @ 250µA	110 nC @ 10 V	650 V	±25V	4200 pF @ 100 V	-	-	PowerFlat™ (8x8) HV	-	2.8W (Ta), 189W (Tc)	150°C (TJ)
NSF080120D7A0J NSF080120D7A0/SOT8070/TO263-7L Nexperia USA Inc.	797	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS5C628NLAFT3G MOSFET N-CH 60V 28A/150A 5DFN onsemi	7,975	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 150A (Tc)	4.5V, 10V	2.4mOhm @ 50A, 10V	Surface Mount	2V @ 135µA	52 nC @ 10 V	60 V	±20V	3600 pF @ 25 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.7W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)
FQAF5N90 MOSFET N-CH 900V 4.1A TO3PF onsemi	6,182	-	询价单	数据表	QFET®	TO-3P-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.1A (Tc)	10V	2.3Ohm @ 2.05A, 10V	Through Hole	5V @ 250µA	40 nC @ 10 V	900 V	±30V	1550 pF @ 25 V	-	-	TO-3PF	-	90W (Tc)	-55°C ~ 150°C (TJ)
AUIRFS3607 MOSFET N-CH 75V 80A D2PAK Infineon Technologies	4,988	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	9mOhm @ 46A, 10V	Surface Mount	4V @ 100µA	84 nC @ 10 V	75 V	±20V	3070 pF @ 50 V	-	-	PG-TO263-3	-	140W (Tc)	-55°C ~ 175°C (TJ)
STL19N60M2 MOSFET N-CH 600V 11A PWRFLAT HV STMicroelectronics	4,393	-	询价单	数据表	MDmesh™ M2	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	-	Surface Mount	4V @ 250µA	21.5 nC @ 10 V	600 V	±25V	791 pF @ 100 V	-	-	PowerFlat™ (8x8) HV	-	90W (Tc)	-55°C ~ 150°C (TJ)
IRF7807D1TR MOSFET N-CH 30V 8.3A 8SO Infineon Technologies	5,000	-	询价单	数据表	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.3A (Ta)	4.5V	25mOhm @ 7A, 4.5V	Surface Mount	1V @ 250µA	17 nC @ 5 V	30 V	±12V	-	-	Schottky Diode (Isolated)	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
US5U29TR MOSFET P-CH 20V 1A TUMT5 Rohm Semiconductor	9,822	-	询价单	数据表	-	6-SMD (5 Leads), Flat Leads	Tape & Reel (TR)	Not For New Designs	P-Channel	MOSFET (Metal Oxide)	1A (Ta)	2.5V, 4.5V	390mOhm @ 1A, 4.5V	Surface Mount	2V @ 1mA	2.1 nC @ 5 V	20 V	±12V	150 pF @ 10 V	-	Schottky Diode (Isolated)	TUMT5	-	1W (Ta)	150°C (TJ)
IRF7807VD1TRPBF MOSFET N-CH 30V 8.3A 8SO Infineon Technologies	8,110	-	询价单	数据表	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.3A (Ta)	4.5V	25mOhm @ 7A, 4.5V	Surface Mount	3V @ 250µA	14 nC @ 4.5 V	30 V	±20V	-	-	Schottky Diode (Isolated)	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
RZL035P01TR MOSFET P-CH 12V 3.5A TUMT6 Rohm Semiconductor	9,085	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Not For New Designs	P-Channel	MOSFET (Metal Oxide)	3.5A (Ta)	1.5V, 4.5V	36mOhm @ 3.5A, 4.5V	Surface Mount	1V @ 1mA	-	12 V	±10V	1940 pF @ 6 V	-	-	TUMT6	-	1W (Ta)	150°C (TJ)

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