富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SCT3080KRHRC15

SCT3080KRHRC15

1200V, 31A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

440 -
SCT3080KRHRC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 31A (Tc) 18V 104mOhm @ 10A, 18V Through Hole 5.6V @ 5mA 60 nC @ 18 V 1200 V +22V, -4V 785 pF @ 800 V AEC-Q101 - TO-247-4L Automotive 165W 175°C (TJ)
IPDQ60R022S7AXTMA1

IPDQ60R022S7AXTMA1

MOSFET

Infineon Technologies

750 -
IPDQ60R022S7AXTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 12V 22mOhm @ 23A, 12V Surface Mount 4.5V @ 1.44mA 150 nC @ 12 V 600 V ±20V 5640 pF @ 300 V AEC-Q101 - PG-HDSOP-22-1 Automotive 416W (Tc) -40°C ~ 150°C (TJ)
NVHL060N090SC1

NVHL060N090SC1

SICFET N-CH 900V 46A TO247-3

onsemi

383 -
NVHL060N090SC1

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 46A (Tc) 15V 84mOhm @ 20A, 15V Through Hole 4.3V @ 5mA 87 nC @ 15 V 900 V +19V, -10V 1770 pF @ 450 V AEC-Q101 - TO-247-3 Automotive 221W (Tc) -55°C ~ 175°C (TJ)
RAL045P01TCR

RAL045P01TCR

MOSFET P-CH 12V 4.5A TUMT6

Rohm Semiconductor

6,577 -
RAL045P01TCR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 1.5V, 4.5V 30mOhm @ 4.5A, 4.5V Surface Mount 1V @ 1mA 40 nC @ 4.5 V 12 V -8V 4200 pF @ 6 V - - TUMT6 - 1W (Ta) 150°C (TJ)
SCT3060ARHRC15

SCT3060ARHRC15

650V, 39A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

446 -
SCT3060ARHRC15

数据表

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 39A (Tc) 18V 78mOhm @ 13A, 18V Through Hole 5.6V @ 6.67mA 58 nC @ 18 V 650 V +22V, -4V 852 pF @ 500 V AEC-Q101 - TO-247-4L Automotive 165W 175°C (TJ)
BSP318SH6327XTSA1

BSP318SH6327XTSA1

MOSFET N-CH 60V 2.6A SOT223-4

Infineon Technologies

3,678 -
BSP318SH6327XTSA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.6A (Tj) 4.5V, 10V 90mOhm @ 2.6A, 10V Surface Mount 2V @ 20µA 20 nC @ 10 V 60 V ±20V 380 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
NSF080120L4A0Q

NSF080120L4A0Q

NSF080120L4A0/SOT8071/TO247-4L

Nexperia USA Inc.

446 -
NSF080120L4A0Q

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 35A (Tc) 15V, 18V 120mOhm @ 20A, 15V Through Hole 2.9V @ 2mA 52 nC @ 15 V 1200 V +22V, -10V 1335 pF @ 800 V - - TO-247 - 183W (Tc) -55°C ~ 175°C (TJ)
AIMZA75R040M1HXKSA1

AIMZA75R040M1HXKSA1

IGBT

Infineon Technologies

229 -
AIMZA75R040M1HXKSA1

数据表

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V Through Hole 5.6V @ 6mA 34 nC @ 18 V 750 V +23V, -5V 1135 pF @ 500 V AEC-Q101 - PG-TO247-4 Automotive 185W (Tc) -55°C ~ 175°C (TJ)
IMZA65R033M2HXKSA1

IMZA65R033M2HXKSA1

IMZA65R033M2HXKSA1

Infineon Technologies

390 -
IMZA65R033M2HXKSA1

数据表

CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V Through Hole 5.6V @ 5.7mA 34 nC @ 18 V 650 V +23V, -7V 1214 pF @ 400 V - - PG-TO247-4-8 - 194W (Tc) -55°C ~ 175°C (TJ)
IMBG40R015M2HXTMA1

IMBG40R015M2HXTMA1

SIC-MOS

Infineon Technologies

939 -
IMBG40R015M2HXTMA1

数据表

CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V Surface Mount 5.6V @ 9.7mA 62 nC @ 18 V 400 V +23V, -7V 2730 pF @ 200 V - - PG-TO263-7-11 - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ)
SCT3060ARC15

SCT3060ARC15

650V, 39A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

427 -
SCT3060ARC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 39A (Tj) 18V 78mOhm @ 13A, 18V Through Hole 5.6V @ 6.67mA 58 nC @ 18 V 650 V +22V, -4V 852 pF @ 500 V - - TO-247-4L - 165W 175°C (TJ)
IPD60R400CEATMA1

IPD60R400CEATMA1

MOSFET N-CH 600V 10.3A TO252-3

Infineon Technologies

4,658 -
IPD60R400CEATMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.3A (Tc) 10V 400mOhm @ 3.8A, 10V Surface Mount 3.5V @ 300µA 32 nC @ 10 V 600 V ±20V 700 pF @ 100 V - - PG-TO252-3 - 83W (Tc) -40°C ~ 150°C (TJ)
MCT04P06-TP

MCT04P06-TP

MOSFET P-CH 60V 3.5A SOT223

Micro Commercial Co

2,259 -
MCT04P06-TP

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.5A (Tj) 4.5V, 10V 80mOhm @ 3.1A, 10V Surface Mount 3V @ 250µA 12 nC @ 4.5 V 60 V ±20V 650 pF @ 15 V - - SOT-223 - 2W -55°C ~ 150°C (TJ)
IRF7832ZTR

IRF7832ZTR

MOSFET N-CH 30V 21A 8SO

Infineon Technologies

3,323 -
IRF7832ZTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta) 4.5V, 10V 3.8mOhm @ 20A, 10V Surface Mount 2.35V @ 250µA 45 nC @ 4.5 V 30 V ±20V 3860 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
PSMN015-100P,127

PSMN015-100P,127

MOSFET N-CH 100V 75A TO220AB

Nexperia USA Inc.

7,835 -
PSMN015-100P,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 15mOhm @ 25A, 10V Through Hole 4V @ 1mA 90 nC @ 10 V 100 V ±20V 4900 pF @ 25 V - - TO-220AB - 300W (Tc) -55°C ~ 175°C (TJ)
STP18N60M6

STP18N60M6

MOSFET N-CH 600V 13A TO220

STMicroelectronics

3,207 -
STP18N60M6

数据表

MDmesh™ M6 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 280mOhm @ 6.5A, 10V Through Hole 4.75V @ 250µA 16.8 nC @ 10 V 600 V ±25V 650 pF @ 100 V - - TO-220 - 110W (Tc) -55°C ~ 150°C (TJ)
AOT22N50L

AOT22N50L

MOSFET N-CH 500V 22A TO220

Alpha & Omega Semiconductor Inc.

6,530 -
AOT22N50L

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 260mOhm @ 11A, 10V Through Hole 4.5V @ 250µA 83 nC @ 10 V 500 V ±30V 3710 pF @ 25 V - - TO-220 - 417W (Tc) -55°C ~ 150°C (TJ)
IRF6623TR1

IRF6623TR1

MOSFET N-CH 20V 16A DIRECTFET

Infineon Technologies

5,032 -
IRF6623TR1

数据表

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 55A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V Surface Mount 2.2V @ 250µA 17 nC @ 4.5 V 20 V ±20V 1360 pF @ 10 V - - DIRECTFET™ ST - 1.4W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRFR18N15DTR

IRFR18N15DTR

MOSFET N-CH 150V 18A DPAK

Infineon Technologies

3,568 -
IRFR18N15DTR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 125mOhm @ 11A, 10V Surface Mount 5.5V @ 250µA 43 nC @ 10 V 150 V ±30V 900 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
STP4NB80

STP4NB80

MOSFET N-CH 800V 4A TO220AB

STMicroelectronics

8,744 -
STP4NB80

数据表

PowerMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3.3Ohm @ 2A, 10V Through Hole 5V @ 250µA 29 nC @ 10 V 800 V ±30V 920 pF @ 25 V - - TO-220 - 100W (Tc) 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户