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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF6655TR1 MOSFET N-CH 100V 4.2A DIRECTFET Infineon Technologies	7,016	-	询价单	数据表	HEXFET®	DirectFET™ Isometric SH	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.2A (Ta), 19A (Tc)	10V	62mOhm @ 5A, 10V	Surface Mount	4.8V @ 25µA	11.7 nC @ 10 V	100 V	±20V	530 pF @ 25 V	-	-	DIRECTFET™ SH	-	2.2W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
SCT3080KRC15 1200V, 31A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	365	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	31A (Tj)	18V	104mOhm @ 10A, 18V	Through Hole	5.6V @ 5mA	60 nC @ 18 V	1200 V	+22V, -4V	785 pF @ 800 V	-	-	TO-247-4L	-	165W	175°C (TJ)
NVHL040N65S3HF SUPERFER3 FRFET AUTOMOTIVE 40MOH onsemi	430	-	询价单	数据表	SuperFET® III, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	40mOhm @ 32.5A, 10V	Through Hole	5V @ 2.1mA	157 nC @ 10 V	650 V	±30V	6655 pF @ 400 V	-	-	TO-247-3	-	446W (Tc)	-55°C ~ 150°C (TJ)
NTH4L030N120M3S SILICON CARBIDE (SIC) MOSFET EL onsemi	422	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	73A (Tc)	18V	39mOhm @ 30A, 18V	Through Hole	4.4V @ 15mA	107 nC @ 18 V	1200 V	+22V, -10V	2430 pF @ 800 V	-	-	TO-247-4L	-	313W (Tc)	-55°C ~ 175°C (TJ)
NVH040N65S3F SF3 FRFET AUTO 40MOHM TO-247 onsemi	412	-	询价单	数据表	SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	40mOhm @ 32.5A, 10V	Through Hole	5V @ 2.1mA	153 nC @ 10 V	650 V	±30V	5875 pF @ 400 V	-	-	TO-247-3	-	446W (Tc)	-55°C ~ 150°C (TJ)
SICW025N065H-BP SIC MOSFET,TO-247AB Micro Commercial Co	360	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	107A (Tc)	18V	30mOhm @ 50A, 18V	Through Hole	4.5V @ 50mA	275 nC @ 18 V	650 V	+22V, -10V	5740 pF @ 400 V	-	-	TO-247AB	-	375W (Tc)	-55°C ~ 175°C (TJ)
STH12N120K5-2AG AUTOMOTIVE-GRADE N-CHANNEL 1200 STMicroelectronics	998	-	询价单	数据表	MDmesh™ K5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	690mOhm @ 6A, 10V	Surface Mount	5V @ 100µA	44.2 nC @ 10 V	1200 V	±30V	1370 pF @ 100 V	-	-	H2PAK-2	-	250W (Tc)	-55°C ~ 150°C (TJ)
S2M0040120D-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	299	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tj)	20V	52mOhm @ 40A, 20V	Through Hole	4V @ 10mA	92.1 nC @ 20 V	1200 V	+20V, -5V	1904 pF @ 1000 V	-	-	TO-247AD	-	348W (Tc)	-55°C ~ 175°C (TJ)
NSF080120L3A0Q SIC MOSFET / 80MOHM / 1200V / TO Nexperia USA Inc.	420	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G3F45MT06D 650V 40M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	-	-	-	Through Hole	-	-	650 V	-	-	-	-	TO-247-3	-	-	-
GS-065-030-6-LL-MR GAN POWER TRANSISTOR Infineon Technologies	195	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	40A (Tc)	6V	58mOhm @ 5.5A, 6V	Surface Mount	2.6V @ 7.5mA	6.7 nC @ 6 V	700 V	+7V, -10V	235 pF @ 400 V	-	-	TOLL	-	-	-55°C ~ 150°C (TJ)
C3M0045075K1 SICFET N-CH 750V 42A TO247 Wolfspeed, Inc.	167	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	42A (Tc)	15V	60mOhm @ 17.6A, 15V	Through Hole	3.8V @ 4.84mA	65 nC @ 15 V	750 V	-8V, +19V	1606 pF @ 500 V	-	-	TO-247-4L	-	139W (Tc)	-40°C ~ 175°C (TJ)
IRFR2405TRR MOSFET N-CH 55V 56A DPAK Infineon Technologies	6,850	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	16mOhm @ 34A, 10V	Surface Mount	4V @ 250µA	110 nC @ 10 V	55 V	±20V	2430 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
STF15N65M5 MOSFET N-CH 650V 11A TO220FP STMicroelectronics	3,201	-	询价单	数据表	MDmesh™ V	TO-220-3 Full Pack	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	340mOhm @ 5.5A, 10V	Through Hole	5V @ 250µA	22 nC @ 10 V	650 V	±25V	816 pF @ 100 V	-	-	TO-220FP	-	30W (Tc)	150°C (TJ)
IRFBF20STRRPBF MOSFET N-CH 900V 1.7A D2PAK Vishay Siliconix	9,457	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	10V	8Ohm @ 1A, 10V	Surface Mount	4V @ 250µA	38 nC @ 10 V	900 V	±20V	490 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.1W (Ta), 54W (Tc)	-55°C ~ 150°C (TJ)
IRFZ34STRLPBF MOSFET N-CH 60V 30A D2PAK Vishay Siliconix	3,684	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	50mOhm @ 18A, 10V	Surface Mount	4V @ 250µA	46 nC @ 10 V	60 V	±20V	1200 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 88W (Tc)	-55°C ~ 175°C (TJ)
IXTP8N65X2 MOSFET N-CH 650V 8A TO220 Littelfuse Inc.	4,049	-	询价单	数据表	Ultra X2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	500mOhm @ 4A, 10V	Through Hole	5V @ 250µA	12 nC @ 10 V	650 V	±30V	800 pF @ 25 V	-	-	TO-220	-	150W (Tc)	-55°C ~ 150°C (TJ)
NVMFS5C430NLWFAFT3G MOSFET N-CH 40V 38A/200A 5DFN onsemi	7,191	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	38A (Ta), 200A (Tc)	4.5V, 10V	1.4mOhm @ 50A, 10V	Surface Mount	2V @ 250µA	70 nC @ 10 V	40 V	±20V	4300 pF @ 20 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)
IRL2505STRRPBF MOSFET N-CH 55V 104A D2PAK Infineon Technologies	5,810	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	104A (Tc)	4V, 10V	8mOhm @ 54A, 10V	Surface Mount	2V @ 250µA	130 nC @ 5 V	55 V	±16V	5000 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)
IRFZ24STRRPBF MOSFET N-CH 60V 17A TO263 Vishay Siliconix	5,476	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	100mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	25 nC @ 10 V	60 V	±20V	640 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)

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