订单满￥1000免运费

富聪科技 | 全球电子元器件分销商

24小时咨询热线 0755 83957878

首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

全部重置

全部应用

结果

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFZ44Z MOSFET N-CH 55V 51A TO220AB Infineon Technologies	8,878	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V	13.9mOhm @ 31A, 10V	Through Hole	4V @ 250µA	43 nC @ 10 V	55 V	±20V	1420 pF @ 25 V	-	-	TO-220AB	-	80W (Tc)	-55°C ~ 175°C (TJ)
IPP12CN10N G MOSFET N-CH 100V 67A TO220-3 Infineon Technologies	3,941	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	10V	12.9mOhm @ 67A, 10V	Through Hole	4V @ 83µA	65 nC @ 10 V	100 V	±20V	4320 pF @ 50 V	-	-	PG-TO220-3	-	125W (Tc)	-55°C ~ 175°C (TJ)
STS30N3LLH6 MOSFET N-CH 30V 30A 8SO STMicroelectronics	7,071	-	询价单	数据表	DeepGATE™, STripFET™ VI	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	2.4mOhm @ 15A, 10V	Surface Mount	1V @ 250µA	40 nC @ 4.5 V	30 V	±20V	4040 pF @ 25 V	-	-	8-SOIC	-	2.7W (Tc)	-55°C ~ 150°C (TJ)
TSM60NE069PW C0G 600V, 51A, SINGLE N-CHANNEL HIGH Taiwan Semiconductor Corporation	295	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V, 12V	60mOhm @ 17A, 12V	Through Hole	6V @ 3.5mA	86 nC @ 10 V	600 V	±30V	3566 pF @ 300 V	-	-	TO-247	-	417W (Tc)	-55°C ~ 150°C (TJ)
AIMDQ75R060M1HXUMA1 AUTOMOTIVE_SICMOS Infineon Technologies	738	-	询价单	数据表	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	34A (Tc)	15V, 20V	78mOhm @ 11.1A, 18V	Surface Mount	5.6V @ 4mA	23 nC @ 18 V	750 V	+23V, -5V	779 pF @ 500 V	AEC-Q101	-	PG-HDSOP-22	Automotive	167W (Tc)	-55°C ~ 175°C (TJ)
STI18N65M2 MOSFET N-CH 650V 12A I2PAK STMicroelectronics	5,533	-	询价单	数据表	MDmesh™ M2	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	330mOhm @ 6A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	650 V	±25V	770 pF @ 100 V	-	-	I2PAK	-	110W (Tc)	150°C (TJ)
E3M0160120J2-TR 160m 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	763	-	询价单	数据表	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	18A (Tc)	15V	208mOhm @ 8.5A, 15V	Surface Mount	3.8V @ 2.33mA	28 nC @ 15 V	1200 V	+19V, -8V	730 pF @ 1000 V	AEC-Q101	-	TO-263-7	Automotive	104W (Tc)	-55°C ~ 175°C (TJ)
IRF7807A MOSFET N-CH 30V 8.3A 8SO Infineon Technologies	4,454	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.3A (Ta)	4.5V	25mOhm @ 7A, 4.5V	Surface Mount	1V @ 250µA	17 nC @ 5 V	30 V	±12V	-	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
NVHL050N65S3F SF3 FRFET AUTO 50MOHM TO-247 onsemi	450	-	询价单	数据表	SuperFET® III, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	50mOhm @ 29A, 10V	Through Hole	5V @ 1.7mA	123 nC @ 10 V	650 V	±30V	5404 pF @ 400 V	-	-	TO-247-3	-	403W (Tc)	-55°C ~ 150°C (TJ)
IRF9Z14L MOSFET P-CH 60V 6.7A I2PAK Vishay Siliconix	3,669	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	6.7A (Tc)	10V	500mOhm @ 4A, 10V	Through Hole	4V @ 250µA	12 nC @ 10 V	60 V	±20V	270 pF @ 25 V	-	-	I2PAK	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
TSG65N195CE RVG 650V, 11A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation	3,000	-	询价单	数据表	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMBG120R034M2HXTMA1 SIC DISCRETE Infineon Technologies	980	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AONS62814T N Alpha & Omega Semiconductor Inc.	2,987	-	询价单	数据表	AlphaSGT™	8-PowerSMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta), 100A (Tc)	6V, 10V	2.6mOhm @ 20A, 10V	Surface Mount	3.2V @ 250µA	100 nC @ 10 V	60 V	±20V	4940 pF @ 40 V	-	-	8-DFN (5x6)	-	8.8W (Ta), 258W (Tc)	-55°C ~ 175°C (TJ)
MXP120A080FW-GE3 SILICON CARBIDE MOSFET Vishay Siliconix	540	-	询价单	数据表	MaxSiC™	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	29A (Tc)	18V, 20V	100mOhm @ 20A, 20V	Through Hole	2.69V @ 5mA	47.3 nC @ 18 V	1200 V	+22V, -10V	1156 pF @ 800 V	-	-	TO-247-3L	-	139W (Tc)	-55°C ~ 150°C (TJ)
NDS9430 MOSFET P-CH 30V 5.3A 8SOIC onsemi	9,925	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5.3A (Ta)	4.5V, 10V	60mOhm @ 5.3A, 10V	Surface Mount	3V @ 250µA	14 nC @ 10 V	30 V	±20V	528 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta)	-55°C ~ 175°C (TJ)
AOM060V75X2Q 750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	330	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	29A (Tc)	15V	80mOhm @ 6A, 15V	Through Hole	3.5V @ 6mA	39.4 nC @ 15 V	750 V	+15V, -5V	1165 pF @ 400 V	AEC-Q101	-	TO-247-4L	Automotive	103W (Tc)	-55°C ~ 175°C (TJ)
AOK060V75X2Q 750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	240	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	29A (Tc)	15V	80mOhm @ 6A, 15V	Through Hole	3.5V @ 6mA	39.4 nC @ 15 V	750 V	+15V, -5V	1165 pF @ 400 V	AEC-Q101	-	TO-247	Automotive	103W (Tc)	-55°C ~ 175°C (TJ)
AUIRF7669L2TR MOSFET N-CH 100V 19A DIRECTFET Infineon Technologies	3,964	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	19A (Ta), 114A (Tc)	10V	4.4mOhm @ 68A, 10V	Surface Mount	5V @ 250µA	120 nC @ 10 V	100 V	±20V	5660 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	3.3W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)
IMDQ75R040M1HXUMA1 SILICON CARBIDE MOSFET Infineon Technologies	674	-	询价单	数据表	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	47A (Tc)	15V, 20V	37mOhm @ 16.6A, 20V	Surface Mount	5.6V @ 6mA	34 nC @ 18 V	750 V	+23V, -5V	1135 pF @ 500 V	-	-	PG-HDSOP-22-1	-	211W (Tc)	-55°C ~ 175°C (TJ)
NVH050N65S3F SF3 FRFET AUTO 50MOHM TO-247 onsemi	443	-	询价单	数据表	SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	50mOhm @ 29A, 10V	Through Hole	5V @ 1.7mA	123 nC @ 10 V	650 V	±30V	5404 pF @ 400 V	-	-	TO-247-3	-	403W (Tc)	-55°C ~ 150°C (TJ)

共 36322 条记录«上一页 1... 367 368 369 370371372 373 374...1817 下一页»

搜索

产品

电话

用户

[email protected]

0755 83957878