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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SPI07N60S5HKSA1

SPI07N60S5HKSA1

MOSFET N-CH 600V 7.3A TO262-3

Infineon Technologies

2,537 -
SPI07N60S5HKSA1

数据表

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V Through Hole 5.5V @ 350µA 35 nC @ 10 V 600 V ±20V 970 pF @ 25 V - - PG-TO262-3-1 - 83W (Tc) -55°C ~ 150°C (TJ)
AUIRLS3114Z

AUIRLS3114Z

MOSFET N-CH 40V 56A DPAK

Infineon Technologies

7,106 -
AUIRLS3114Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 4.9mOhm @ 56A, 10V Surface Mount 2.5V @ 100µA 53 nC @ 4.5 V 40 V ±16V 3617 pF @ 25 V - - TO-252AA (DPAK) - 143W (Tc) -55°C ~ 175°C (TJ)
IRF6621TR1

IRF6621TR1

MOSFET N-CH 30V 12A DIRECTFET

Infineon Technologies

9,919 -
IRF6621TR1

数据表

HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 55A (Tc) 4.5V, 10V 9.1mOhm @ 12A, 10V Surface Mount 2.25V @ 250µA 17.5 nC @ 4.5 V 30 V ±20V 1460 pF @ 15 V - - DIRECTFET™ SQ - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF640FP

IRF640FP

MOSFET N-CH 200V 18A TO220FP

STMicroelectronics

2,277 -
IRF640FP

数据表

MESH OVERLAY™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 180mOhm @ 9A, 10V Through Hole 4V @ 250µA 72 nC @ 10 V 200 V ±20V 1560 pF @ 25 V - - TO-220FP - 40W (Tc) 150°C (TJ)
STP8NK85Z

STP8NK85Z

MOSFET N-CH 850V 6.7A TO220AB

STMicroelectronics

3,630 -
STP8NK85Z

数据表

SuperMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.7A (Tc) 10V 1.4Ohm @ 3.35A, 10V Through Hole 4.5V @ 100µA 60 nC @ 10 V 850 V ±30V 1870 pF @ 25 V - - TO-220 - 150W (Tc) -55°C ~ 150°C (TJ)
STF11NM65N

STF11NM65N

MOSFET N-CH 650V 11A TO220FP

STMicroelectronics

9,318 -
STF11NM65N

数据表

MDmesh™ II TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 455mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 650 V ±25V 800 pF @ 50 V - - TO-220FP - 25W (Tc) 150°C (TJ)
STF18N60DM2

STF18N60DM2

MOSFET N-CH 600V 13A TO220FP

STMicroelectronics

9,701 -
STF18N60DM2

数据表

MDmesh™ DM2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 295mOhm @ 6A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 600 V ±25V 800 pF @ 100 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
IRL3714ZS

IRL3714ZS

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies

2,552 -
IRL3714ZS

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V Surface Mount 2.55V @ 250µA 7.2 nC @ 4.5 V 20 V ±20V 550 pF @ 10 V - - D2PAK - 35W (Tc) -55°C ~ 175°C (TJ)
STF110N10F7

STF110N10F7

MOSFET N-CH 100V 45A TO220FP

STMicroelectronics

5,655 -
STF110N10F7

数据表

DeepGATE™, STripFET™ VII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 7mOhm @ 22.5A, 10V Through Hole 4.5V @ 250µA 72 nC @ 10 V 100 V ±20V 5117 pF @ 50 V - - TO-220FP - 30W (Tc) -55°C ~ 175°C (TJ)
PSMNR90-80CSFJ

PSMNR90-80CSFJ

PSMNR90-80CSF/SOT8005A/CCPAK12

Nexperia USA Inc.

250 -
PSMNR90-80CSFJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 505A (Tc) 10V 0.9mOhm @ 25A, 10V Surface Mount 4V @ 1mA 463 nC @ 10 V 80 V ±20V 32115 pF @ 40 V - - CCPAK1212i - 1.55kW (Tc) -55°C ~ 175°C (TJ)
PSMNR90-80ASFJ

PSMNR90-80ASFJ

PSMNR90-80ASF/SOT8000A/CCPAK12

Nexperia USA Inc.

250 -
PSMNR90-80ASFJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 505A (Tc) 10V 0.85mOhm @ 25A, 10V Surface Mount 4V @ 1mA 463 nC @ 10 V 80 V ±20V 32115 pF @ 40 V - - CCPAK1212 - 1.55kW (Tc) -55°C ~ 175°C (TJ)
SIHK055N60EF-T1GE3

SIHK055N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2,040 -
SIHK055N60EF-T1GE3

数据表

EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 58mOhm @ 16A, 10V Surface Mount 5V @ 250µA 90 nC @ 10 V 600 V ±30V 3667 pF @ 100 V - - PowerPAK®10 x 12 - 236W (Tc) -55°C ~ 150°C (TJ)
PSMN1R0-100CSFJ

PSMN1R0-100CSFJ

PSMN1R0-100CSF/SOT8005A/CCPAK1

Nexperia USA Inc.

250 -
PSMN1R0-100CSFJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 460A (Tc) 10V 1.04mOhm @ 25A, 10V Surface Mount 4V @ 1mA 539 nC @ 10 V 100 V ±20V 33624 pF @ 50 V - - CCPAK1212i - 1.55kW (Tc) -55°C ~ 175°C (TJ)
E4M0060075K1

E4M0060075K1

MOSFETS AUTOMOTIVE 126W 3.8V NC

Wolfspeed, Inc.

440 -
E4M0060075K1

数据表

E TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 35A (Tc) 15V 78mOhm @ 13.4A, 15V Through Hole 3.8V @ 3.67mA 52 nC @ 15 V 750 V +19V, -8V 1203 pF @ 500 V AEC-Q101 - TO-247-4L Automotive 126W (Tc) -55°C ~ 175°C (TJ)
NTH4L032N065M3S

NTH4L032N065M3S

SIC MOS TO247-4L 32MOHM 650V M3S

onsemi

618 -
NTH4L032N065M3S

数据表

- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 50A (Tc) 15V, 18V 44mOhm @ 15A, 18V Through Hole 4V @ 7.5mA 55 nC @ 18 V 650 V +22V, -8V 1410 pF @ 400 V - - TO-247-4 - 187W (Tc) -55°C ~ 175°C (TJ)
PJMK074N60FRCH_T0_00201

PJMK074N60FRCH_T0_00201

600V/ 74M / 53A/ FAST RECOVERY Q

Panjit International Inc.

1,500 -
PJMK074N60FRCH_T0_00201

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
STWA67N60M6

STWA67N60M6

MOSFET N-CH 600V 52A TO247

STMicroelectronics

555 -
STWA67N60M6

数据表

MDmesh™ M6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 52A (Tc) 10V 49mOhm @ 26A, 10V Through Hole 4.75V @ 250µA 72.5 nC @ 10 V 600 V ±25V 3400 pF @ 100 V - - TO-247 Long Leads - 330W (Tc) -55°C ~ 150°C (TJ)
TSG65N190CR RVG

TSG65N190CR RVG

650V, 11A, PDFN56, E-MODE GAN TR

Taiwan Semiconductor Corporation

2,999 -
TSG65N190CR RVG

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
STK224N4F7AG

STK224N4F7AG

DISCRETE

STMicroelectronics

2,623 -
STK224N4F7AG

数据表

STripFET™ F7 SC-100, SOT-669 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 1.5mOhm @ 50A, 10V Surface Mount 4V @ 250µA 50 nC @ 10 V 40 V ±20V 4060 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 150W (Tc) -55°C ~ 175°C (TJ)
AOT284L

AOT284L

MOSFET N-CH 80V 16A/105A TO220

Alpha & Omega Semiconductor Inc.

2,149 -
AOT284L

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 105A (Tc) 6V, 10V 4.5mOhm @ 20A, 10V Through Hole 3.3V @ 250µA 100 nC @ 10 V 80 V ±20V 5154 pF @ 40 V - - TO-220 - 2.1W (Ta), 250W (Tc) -55°C ~ 175°C (TJ)
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