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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFR6215TR MOSFET P-CH 150V 13A DPAK Infineon Technologies	6,196	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	295mOhm @ 6.6A, 10V	Surface Mount	4V @ 250µA	66 nC @ 10 V	150 V	±20V	860 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
SIHP054N65E-GE3 E SERIES POWER MOSFET TO-220AB, Vishay Siliconix	1,037	-	询价单	数据表	E	TO-220-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	58mOhm @ 20A, 10V	Through Hole	5V @ 250µA	108 nC @ 20 V	600 V	±30V	3769 pF @ 100 V	-	-	TO-220AB	-	312W (Tc)	-55°C ~ 150°C (TJ)
IPDQ60R035CFD7XTMA1 HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies	750	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	-	MOSFET (Metal Oxide)	-	-	-	Surface Mount	-	-	600 V	-	-	-	-	PG-HDSOP-22-1	-	-	-
IMLT65R040M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	327	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S2M0080120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	230	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	37A (Tj)	20V	100mOhm @ 20A, 20V	Surface Mount	4V @ 10mA	54 nC @ 20 V	1200 V	+20V, -5V	1324 pF @ 1000 V	-	-	TO-263-7	-	234W (Tc)	-55°C ~ 175°C (TJ)
NTHL032N065M3S SIC MOS TO247-3L 32MOHM 650V M3S onsemi	815	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	51A (Tc)	15V, 18V	44mOhm @ 15A, 18V	Through Hole	4V @ 7.5mA	55 nC @ 18 V	650 V	+22V, -8V	1410 pF @ 400 V	-	-	TO-247-3	-	200W (Tc)	-55°C ~ 175°C (TJ)
IPDQ65R040CFD7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	392	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	64A (Tc)	10V	40mOhm @ 24.8A, 10V	Surface Mount	4.5V @ 1.24mA	97 nC @ 10 V	650 V	±20V	4975 pF @ 400 V	AEC-Q101	-	PG-HDSOP-22-1	Automotive	357W (Tc)	-40°C ~ 150°C (TJ)
IPQC65R040CFD7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	200	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	64A (Tc)	10V	40mOhm @ 24.8A, 10V	Surface Mount	4.5V @ 1.24mA	97 nC @ 10 V	650 V	±20V	4975 pF @ 400 V	AEC-Q101	-	PG-HDSOP-22-1	Automotive	357W (Tc)	-40°C ~ 150°C (TJ)
IPZA60R037CM8XKSA1 IPZA60R037CM8XKSA1 Infineon Technologies	195	-	询价单	数据表	CoolMOS™	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	64A (Tj)	10V	37mOhm @ 27A, 10V	Through Hole	4.7V @ 680µA	79 nC @ 10 V	600 V	±20V	3458 pF @ 400 V	-	-	PG-TO247-4-U02	-	329W (Tc)	-55°C ~ 150°C (TJ)
IPT65R040CFD7XTMA1 MOSFET N-CH 650V 8HSOF Infineon Technologies	2,000	-	询价单	数据表	CoolMOS™ CFD7	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	-	-	-	Surface Mount	-	-	650 V	-	-	-	-	PG-HSOF-8-2	-	-	-
SCT3105KRHRC15 1200V, 24A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	440	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	18V	137mOhm @ 7.6A, 18V	Through Hole	5.6V @ 3.81mA	51 nC @ 18 V	1200 V	+22V, -4V	574 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	134W	175°C (TJ)
IMTA65R040M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	150	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS5C604NWFT1G NFET SO8FL 60V 287A 1.2MO onsemi	1,500	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta), 287A (Tc)	4.5V, 10V	1.2mOhm @ 50A, 10V	Surface Mount	4V @ 250µA	80 nC @ 10 V	10 V	±20V	6400 pF @ 25 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.9W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)
TK31V60W,LVQ MOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage	2,455	-	询价单	数据表	DTMOSIV	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	98mOhm @ 15.4A, 10V	Surface Mount	3.7V @ 1.5mA	86 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	240W (Tc)	150°C (TJ)
IMT65R057M1HXUMA1 SILICON CARBIDE MOSFET Infineon Technologies	1,983	-	询价单	数据表	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	-	SiCFET (Silicon Carbide)	-	18V	-	Surface Mount	-	-	650 V	-	-	-	-	PG-HSOF-8-2	-	-	-
IPA50R380CE MOSFET N-CH 500V 9.9A TO220-FP Infineon Technologies	9,512	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.9A (Tc)	13V	380mOhm @ 3.2A, 13V	Through Hole	3.5V @ 260µA	24.8 nC @ 10 V	500 V	±20V	584 pF @ 100 V	-	-	PG-TO220-FP	-	29.2W (Tc)	-55°C ~ 150°C (TJ)
DMTH4M90SPSWQ-13 MOSFET BVDSS: 31V~40V POWERDI506 Diodes Incorporated	2,972	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	278A (Tc)	10V	0.9mOhm @ 20A, 10V	Surface Mount, Wettable Flank	4V @ 250µA	115 nC @ 10 V	40 V	±20V	9434 pF @ 20 V	AEC-Q101	-	PowerDI5060-8 (Type UX)	Automotive	2.6W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
DMTH4M90LPSWQ-13 MOSFET BVDSS: 31V~40V POWERDI506 Diodes Incorporated	8,323	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	356A (Tc)	4.5V, 10V	0.9mOhm @ 20A, 10V	Surface Mount, Wettable Flank	3V @ 250µA	111 nC @ 10 V	40 V	±20V	9308 pF @ 20 V	AEC-Q101	-	PowerDI5060-8 (Type UX)	Automotive	4.2W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)
IRFBF20LPBF MOSFET N-CH 900V 1.7A I2PAK Vishay Siliconix	6,699	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	10V	8Ohm @ 1A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	900 V	±20V	490 pF @ 25 V	-	-	I2PAK	-	3.1W (Ta), 54W (Tc)	-55°C ~ 150°C (TJ)
SPP07N60S5 MOSFET N-CH 650V 7.3A TO220-3 Infineon Technologies	6,527	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	Through Hole	5.5V @ 350µA	35 nC @ 10 V	650 V	±20V	970 pF @ 25 V	-	-	PG-TO220-3-1	-	83W (Tc)	-55°C ~ 150°C (TJ)

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