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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPD088N06N3GBTMA1

IPD088N06N3GBTMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies

4,454 -
IPD088N06N3GBTMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 8.8mOhm @ 50A, 10V Surface Mount 4V @ 34µA 48 nC @ 10 V 60 V ±20V 3900 pF @ 30 V - - PG-TO252-3 - 71W (Tc) -55°C ~ 155°C (TJ)
STS12N3LLH5

STS12N3LLH5

MOSFET N-CH 30V 12A 8SO

STMicroelectronics

3,939 -
STS12N3LLH5

数据表

STripFET™ V 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 7.5mOhm @ 6A, 10V Surface Mount 1V @ 250µA 8 nC @ 4.5 V 30 V +22V, -20V 1290 pF @ 25 V - - 8-SOIC - 2.7W (Tc) -55°C ~ 150°C (TJ)
AOTF9N90

AOTF9N90

MOSFET N-CH 900V 9A TO220-3F

Alpha & Omega Semiconductor Inc.

4,330 -
AOTF9N90

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 1.3Ohm @ 4.5A, 10V Through Hole 4.5V @ 250µA 58 nC @ 10 V 900 V ±30V 2560 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
AON6260

AON6260

MOSFET N-CH 60V 41A/85A 8DFN

Alpha & Omega Semiconductor Inc.

7,834 -
AON6260

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 41A (Ta), 85A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 115 nC @ 10 V 60 V ±20V 5578 pF @ 30 V - - 8-DFN (5x6) - 7.3W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
STD28P3LLH6AG

STD28P3LLH6AG

MOSFET P-CH 30V 12A DPAK

STMicroelectronics

8,181 -
STD28P3LLH6AG

数据表

STripFET™ H6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 30mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 29 nC @ 10 V 30 V ±18V 1480 pF @ 25 V AEC-Q101 - DPAK Automotive 33W (Tc) 150°C (TJ)
TSM10N06CP ROG

TSM10N06CP ROG

MOSFET N-CHANNEL 60V 10A TO252

Taiwan Semiconductor Corporation

7,404 -
TSM10N06CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 4V, 10V 65mOhm @ 10A, 10V Surface Mount 3V @ 250µA 10.5 nC @ 4.5 V 60 V ±20V 1100 pF @ 30 V - - TO-252 (DPAK) - 45W (Tc) -55°C ~ 150°C (TJ)
TSM160P04LCRHRLG

TSM160P04LCRHRLG

MOSFET P-CH 40V 51A 8PDFN

Taiwan Semiconductor Corporation

2,477 -
TSM160P04LCRHRLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 51A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 48 nC @ 10 V 40 V ±20V 2712 pF @ 20 V AEC-Q101 - 8-PDFN (5x6) Automotive 69W (Tc) -55°C ~ 150°C (TJ)
CMS70N04H8-HF

CMS70N04H8-HF

MOSFET N-CH 40V 70A DFN5X6

Comchip Technology

4,175 -
CMS70N04H8-HF

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 8.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 19.7 nC @ 10 V 40 V ±20V 1278 pF @ 25 V - - DFN5x6 (PR-PAK) - 2W (Ta), 72.3W (Tc) -55°C ~ 150°C (TJ)
STD10NF10L

STD10NF10L

MOSFET N-CH 100V 15A DPAK

UMW

3,445 -
STD10NF10L

数据表

* TO-252-3, DPAK (2 Leads + Tab), SC-63 Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 110mOhm @ 10A, 10V Surface Mount 3V @ 250µA - 100 V ±20V - - - TO-252 (DPAK) - 55W (Tc) -55°C ~ 155°C (TJ)
IRFR3806TR

IRFR3806TR

MOSFET N-CH 60V 43A DPAK

UMW

2,699 -
IRFR3806TR

数据表

* TO-252-3, DPAK (2 Leads + Tab), SC-63 Active N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 15.8mOhm @ 25A, 10V Surface Mount 4V @ 50µA - 60 V ±20V - - - TO-252 (DPAK) - 71W (Tc) -55°C ~ 155°C (TJ)
FDS3672

FDS3672

MOSFET N-CH 100V 7.5A 8SOIC

UMW

9,161 -
FDS3672

数据表

* - Active - - - - - - - - - - - - - - - - -
DMTH8003STLW-13

DMTH8003STLW-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated

3,710 -
DMTH8003STLW-13

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 173A (Tc) 10V 2.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 124 nC @ 10 V 80 V ±20V 8191 pF @ 40 V - - POWERDI1012-8 - 5.6W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
DMJ70H600SH3

DMJ70H600SH3

MOSFET N-CH 700V 11A TO251

Diodes Incorporated

5,067 -
DMJ70H600SH3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 600mOhm @ 2.4A, 10V Through Hole 4V @ 250µA 18.2 nC @ 10 V 700 V ±30V 643 pF @ 25 V AEC-Q101 - TO-251 Automotive 113W (Tc) -55°C ~ 150°C (TJ)
STF7NM50N

STF7NM50N

MOSFET N-CH 500V 5A TO220FP

STMicroelectronics

4,206 -
STF7NM50N

数据表

MDmesh™ II TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 780mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 12 nC @ 10 V 500 V ±25V 400 pF @ 50 V - - TO-220FP - 20W (Tc) -55°C ~ 150°C (TJ)
STF5NK52ZD

STF5NK52ZD

MOSFET N-CH 520V 4.4A TO220FP

STMicroelectronics

3,829 -
STF5NK52ZD

数据表

SuperMESH™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V Through Hole 4.5V @ 50µA 16.9 nC @ 10 V 520 V ±30V 529 pF @ 25 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
TSM5ND50CI

TSM5ND50CI

500V, 5A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

4,529 -
TSM5ND50CI

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) - 1.5Ohm @ 1.6A, 10V Through Hole 3.8V @ 250µA 16 nC @ 10 V 500 V ±30V 603 pF @ 50 V - - TO-220 - 42W (Tc) -55°C ~ 150°C (TJ)
IRFR6215TRL

IRFR6215TRL

MOSFET P-CH 150V 13A DPAK

Infineon Technologies

9,156 -
IRFR6215TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 295mOhm @ 6.6A, 10V Surface Mount 4V @ 250µA 66 nC @ 10 V 150 V ±20V 860 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
STB28NM60ND

STB28NM60ND

MOSFET N-CH 600V 23A D2PAK

STMicroelectronics

1,427 -
STB28NM60ND

数据表

FDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 23A (Tc) 10V 150mOhm @ 11.5A, 10V Surface Mount 5V @ 250µA 62.5 nC @ 10 V 600 V ±25V 2090 pF @ 100 V - - TO-263 (D2PAK) - 190W (Tc) 150°C (TJ)
G3F60MT06J-TR

G3F60MT06J-TR

650V 55M TO-263-7 G3F SIC MOSFET

GeneSiC Semiconductor

800 -
G3F60MT06J-TR

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 44A (Tc) 15V, 18V 75mOhm @ 15A, 18V Surface Mount 4.3V @ 7mA 45 nC @ 18 V 650 V +22V, -10V 1322 pF @ 400 V AEC-Q101 - TO-263-7 Automotive 155W (Tc) -55°C ~ 175°C (TJ)
PJMH074N60FRCH_T0_00601

PJMH074N60FRCH_T0_00601

600V/ 74M / 53A/ FAST RECOVERY Q

Panjit International Inc.

1,491 -
PJMH074N60FRCH_T0_00601

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 53A 10V - Through Hole - 84 nC @ 10 V 600 V ±30V - - - TO-247AD - - -
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