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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6086YNZC17

R6086YNZC17

NCH 600V 33A, TO-3PF, POWER MOSF

Rohm Semiconductor

300 -
R6086YNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V, 12V 44mOhm @ 17A, 12V Through Hole 6V @ 4.6mA 110 nC @ 10 V 600 V ±30V 5100 pF @ 100 V - - TO-3PF - 114W (Tc) 150°C (TJ)
NTBLS002N08MC

NTBLS002N08MC

MOSFET N-CH 80V 28A/238A 8HPSOF

onsemi

2,000 -
NTBLS002N08MC

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 238A (Tc) 6V, 10V 2mOhm @ 80A, 10V Surface Mount 4V @ 530µA 92 nC @ 10 V 80 V ±20V 6580 pF @ 40 V - - 8-HPSOF - 2.9W (Ta), 208W (Tc) -55°C ~ 150°C (TJ)
PSMNR90-80ASEJ

PSMNR90-80ASEJ

PSMNR90-80ASE/SOT8000A/CCPAK12

Nexperia USA Inc.

250 -
PSMNR90-80ASEJ

数据表

- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 495A (Tc) 10V 0.9mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 504 nC @ 10 V 80 V ±20V 36802 pF @ 40 V - - CCPAK1212 - 1.55kW (Tc) -55°C ~ 175°C (TJ)
AIMZA75R090M1HXKSA1

AIMZA75R090M1HXKSA1

AUTOMOTIVE_SICMOS

Infineon Technologies

229 -
AIMZA75R090M1HXKSA1

数据表

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 23A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V Through Hole 5.6V @ 2.6mA 15 nC @ 18 V 750 V +23V, -5V 542 pF @ 500 V AEC-Q101 - PG-TO247-4 Automotive 113W (Tc) -55°C ~ 175°C (TJ)
NTH4L023N065M3S

NTH4L023N065M3S

SIC MOS TO247-4L 23MOHM 650V M3S

onsemi

458 -
NTH4L023N065M3S

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 40A (Tc) 15V, 18V 33mOhm @ 20A, 18V Through Hole 4V @ 10mA 69 nC @ 18 V 650 V +22V, -8V 1952 pF @ 400 V - - TO-247-4 - 245W (Tc) -55°C ~ 175°C (TJ)
SCT3160KWAHRTL

SCT3160KWAHRTL

1200V, 17A, 7-PIN SMD, TRENCH-ST

Rohm Semiconductor

1,000 -
SCT3160KWAHRTL

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 17A (Tc) 18V 208mOhm @ 5A, 18V Surface Mount 5.6V @ 2.5mA 42 nC @ 18 V 1200 V +22V, -4V 398 pF @ 800 V AEC-Q101 - TO-263-7LA Automotive - 175°C (TJ)
IMBG40R025M2HXTMA1

IMBG40R025M2HXTMA1

SIC-MOS

Infineon Technologies

900 -
IMBG40R025M2HXTMA1

数据表

CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 9A (Ta), 68A (Tc) 15V, 18V 32.1mOhm @ 15.7A, 18V Surface Mount 5.6V @ 5.6mA 36 nC @ 18 V 400 V +23V, -7V 1690 pF @ 200 V - - PG-TO263-7-11 - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ)
SCT3105KRC15

SCT3105KRC15

1200V, 24A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

370 -
SCT3105KRC15

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 24A (Tj) 18V 137mOhm @ 7.6A, 18V Through Hole 5.6V @ 3.81mA 51 nC @ 18 V 1200 V +22V, -4V 574 pF @ 800 V - - TO-247-4L - 134W 175°C (TJ)
AIMCQ120R080M1TXTMA1

AIMCQ120R080M1TXTMA1

SIC_DISCRETE

Infineon Technologies

770 -
AIMCQ120R080M1TXTMA1

数据表

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 34A (Tc) 18V, 20V 100mOhm @ 10A, 20V Surface Mount 5.1V @ 3.3mA 24 nC @ 20 V 1200 V +25V, -10V 671 pF @ 800 V AEC-Q101 - PG-HDSOP-22 Automotive 211W (Tc) -55°C ~ 175°C (TJ)
IRL2910PBF

IRL2910PBF

MOSFET N-CH 100V 55A TO220AB

Infineon Technologies

4,000 -
IRL2910PBF

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V Through Hole 2V @ 250µA 140 nC @ 5 V 100 V ±16V 3700 pF @ 25 V - - TO-220AB - 200W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C612NLWFT1G

NVMFS5C612NLWFT1G

MOSFET N-CH 60V 36A/235A 5DFN

onsemi

7,898 -
NVMFS5C612NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 36A (Ta), 235A (Tc) 4.5V, 10V 1.5mOhm @ 50A, 10V Surface Mount 2V @ 250µA 91 nC @ 10 V 60 V ±20V 6660 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
IPP032N06N3GHKSA1

IPP032N06N3GHKSA1

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies

9,490 -
IPP032N06N3GHKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.2mOhm @ 100A, 10V Through Hole 4V @ 118µA 165 nC @ 10 V 60 V ±20V 13000 pF @ 30 V - - PG-TO220-3 - 188W (Tc) -55°C ~ 175°C (TJ)
IAUC120N06S5N015ATMA1

IAUC120N06S5N015ATMA1

MOSFET_)40V 60V)

Infineon Technologies

5,755 -
IAUC120N06S5N015ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tj) 7V, 10V 1.5mOhm @ 60A, 10V Surface Mount 3.4V @ 94µA 96 nC @ 10 V 60 V ±20V 6952 pF @ 30 V AEC-Q101 - PG-TDSON-8-43 Automotive 167W (Tc) -55°C ~ 175°C (TJ)
IRFR5505TRLPBF

IRFR5505TRLPBF

MOSFET P-CH 55V 18A DPAK

Infineon Technologies

6,308 -
IRFR5505TRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 110mOhm @ 9.6A, 10V Surface Mount 4V @ 250µA 32 nC @ 10 V 55 V ±20V 650 pF @ 25 V - - TO-252AA (DPAK) - 57W (Tc) -55°C ~ 150°C (TJ)
FDD8878

FDD8878

MOSFET N-CH 30V 11A/40A TO252AA

onsemi

4,275 -
FDD8878

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 40A (Tc) 4.5V, 10V 15mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 26 nC @ 10 V 30 V ±20V 880 pF @ 15 V - - TO-252AA - 40W (Tc) -55°C ~ 175°C (TJ)
FDS8449

FDS8449

MOSFET N-CH 40V 7.6A 8SOIC

onsemi

8,451 -
FDS8449

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.6A (Ta) 4.5V, 10V 29mOhm @ 7.6A, 10V Surface Mount 3V @ 250µA 11 nC @ 5 V 40 V ±20V 760 pF @ 20 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
SI3495DV-T1-E3

SI3495DV-T1-E3

MOSFET P-CH 20V 5.3A 6TSOP

Vishay Siliconix

3,430 -
SI3495DV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.3A (Ta) 1.5V, 4.5V 24mOhm @ 7A, 4.5V Surface Mount 750mV @ 250µA 38 nC @ 4.5 V 20 V ±5V - - - 6-TSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
FDD8896-F085

FDD8896-F085

MOSFET N-CH 30V 17A/94A TO252AA

onsemi

5,798 -
FDD8896-F085

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Ta), 94A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA 60 nC @ 10 V 30 V ±20V 2525 pF @ 15 V AEC-Q101 - TO-252AA Automotive 80W (Tc) -55°C ~ 175°C (TJ)
SI7196DP-T1-GE3

SI7196DP-T1-GE3

MOSFET N-CH 30V 16A PPAK SO-8

Vishay Siliconix

8,701 -
SI7196DP-T1-GE3

数据表

WFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 11mOhm @ 12A, 10V Surface Mount 3V @ 250µA 38 nC @ 10 V 30 V ±20V 1577 pF @ 15 V - - PowerPAK® SO-8 - 5W (Ta), 41.6W (Tc) -55°C ~ 150°C (TJ)
BSC883N03MSGATMA1

BSC883N03MSGATMA1

MOSFET N-CH 34V 19A/98A TDSON

Infineon Technologies

8,111 -
BSC883N03MSGATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta), 98A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 10V Surface Mount 2V @ 250µA 41 nC @ 10 V 34 V ±20V 3200 pF @ 15 V - - PG-TDSON-8-1 - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ)
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