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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
DKG1020 LOW RON & GATE THRESHOLD MOSFET Sanken Electric USA Inc.	4,938	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	4.5V, 10V	4.7mOhm @ 42A, 10V	Surface Mount	2.5V @ 1mA	47 nC @ 10 V	100 V	±20V	2200 pF @ 10 V	-	-	TO-252	-	40W (Tc)	150°C
IRF737LCS MOSFET N-CH 300V 6.1A D2PAK Vishay Siliconix	3,399	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.1A (Tc)	10V	750mOhm @ 3.7A, 10V	Surface Mount	4V @ 250µA	17 nC @ 10 V	300 V	±30V	430 pF @ 25 V	-	-	TO-263 (D2PAK)	-	-	-
IRF1010NLPBF MOSFET N-CH 55V 85A TO262 Infineon Technologies	8,182	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	85A (Tc)	10V	11mOhm @ 43A, 10V	Through Hole	4V @ 250µA	120 nC @ 10 V	55 V	±20V	3210 pF @ 25 V	-	-	TO-262	-	180W (Tc)	-55°C ~ 175°C (TJ)
IRF3709STRL MOSFET N-CH 30V 90A D2PAK Infineon Technologies	4,712	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	9mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	41 nC @ 5 V	30 V	±20V	2672 pF @ 16 V	-	-	D2PAK	-	3.1W (Ta), 120W (Tc)	-55°C ~ 150°C (TJ)
94-3250 MOSFET N-CH 30V 12A DIRECTFET Infineon Technologies	5,014	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MQ	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta), 49A (Tc)	4.5V, 7V	11.5mOhm @ 12A, 7V	Surface Mount	2.1V @ 250µA	26 nC @ 4.5 V	30 V	±12V	2270 pF @ 15 V	-	-	DIRECTFET™ MQ	-	2.3W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IRF6608 MOSFET N-CH 30V 13A DIRECTFET Infineon Technologies	8,936	-	询价单	数据表	HEXFET®	DirectFET™ Isometric ST	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 55A (Tc)	4.5V, 10V	9mOhm @ 13A, 10V	Surface Mount	3V @ 250µA	24 nC @ 4.5 V	30 V	±12V	2120 pF @ 15 V	-	-	DIRECTFET™ ST	-	2.1W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
TSM150P04LCS -40, -22, SINGLE P-CHANNEL Taiwan Semiconductor Corporation	3,640	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	9A (Ta), 22A (Tc)	4.5V, 10V	15mOhm @ 9A, 10V	Surface Mount	2.5V @ 250µA	48 nC @ 10 V	40 V	±20V	2783 pF @ 20 V	-	-	8-SOP	-	2.2W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)
SPB80N06S2-07 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	5,391	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	6.6mOhm @ 68A, 10V	Surface Mount	4V @ 180µA	110 nC @ 10 V	55 V	±20V	4540 pF @ 25 V	-	-	PG-TO263-3-2	-	250W (Tc)	-55°C ~ 175°C (TJ)
SPB80N06S2L-06 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	6,034	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	6.3mOhm @ 69A, 10V	Surface Mount	2V @ 180µA	150 nC @ 10 V	55 V	±20V	5050 pF @ 25 V	-	-	PG-TO263-3-2	-	250W (Tc)	-55°C ~ 175°C (TJ)
IPDQ60R040S7AXTMA1 MOSFET Infineon Technologies	720	-	询价单	数据表	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	12V	40mOhm @ 13A, 12V	Surface Mount	4.5V @ 790µA	83 nC @ 12 V	600 V	±20V	-	AEC-Q101	-	PG-HDSOP-22-1	Automotive	272W (Tc)	-40°C ~ 150°C (TJ)
SCT3160KW7HRTL 1200V, 17A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	1,990	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	18V	208mOhm @ 5A, 18V	Surface Mount	5.6V @ 2.5mA	42 nC @ 18 V	1200 V	+22V, -4V	398 pF @ 800 V	AEC-Q101	-	TO-263-7L	Automotive	-	175°C (TJ)
TK068N65Z5,S1F 650V DTMOS6-HSD TO-247 68MOHM Toshiba Semiconductor and Storage	235	-	询价单	数据表	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	37A (Ta)	10V	68mOhm @ 18.5A, 10V	Through Hole	4.5V @ 1.69mA	68 nC @ 10 V	650 V	±30V	3765 pF @ 300 V	-	-	TO-247	-	270W (Tc)	150°C
SIHG47N65E-GE3 MOSFET N-CH 650V 47A TO247AC Vishay Siliconix	486	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	72mOhm @ 24A, 10V	Through Hole	4V @ 250µA	273 nC @ 10 V	650 V	±30V	5682 pF @ 100 V	-	-	TO-247AC	-	417W (Tc)	-55°C ~ 150°C (TJ)
SCT3160KWATL 1200V, 17A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	1,000	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tj)	18V	208mOhm @ 5A, 18V	Surface Mount	5.6V @ 2.5mA	42 nC @ 18 V	1200 V	+22V, -4V	398 pF @ 800 V	-	-	TO-263-7LA	-	-	175°C (TJ)
NVMFS5C604NT1G NFET SO8FL 60V 287A 1.2MO onsemi	1,445	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta), 287A (Tc)	4.5V, 10V	1.2mOhm @ 50A, 10V	Surface Mount	4V @ 250µA	80 nC @ 10 V	10 V	±20V	6400 pF @ 25 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.9W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)
G3F135MT12J-TR 1200V 135M TO-263-7 G3F SIC MOSF GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	18A (Tc)	18V	180mOhm @ 8A, 18V	Surface Mount	4.3V @ 5mA	27 nC @ 18 V	1200 V	+22V, -10V	575 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	87W (Tc)	-55°C ~ 175°C (TJ)
PJMF099N60EC_T0_00601 600V/ 99M / 39A/ EASY TO DRIVER Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	39A (Tc)	10V	99mOhm @ 19.5A, 10V	Through Hole	4V @ 250µA	60 nC @ 10 V	650 V	±30V	2568 pF @ 400 V	-	-	ITO-220AB-F	-	34W (Tc)	-55°C ~ 150°C (TJ)
RX3R10BBHC16 NCH 150V 105A, TO-220AB, POWER M Rohm Semiconductor	988	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	105A (Tc)	6V, 10V	8.8mOhm @ 50A, 10V	Through Hole	4V @ 1mA	130 nC @ 10 V	150 V	±20V	7550 pF @ 75 V	-	-	TO-220AB	-	181W (Tc)	150°C (TJ)
NVHL065N65S3F SUPERFET3 650V TO247 onsemi	398	-	询价单	数据表	SuperFET® III, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	46A (Tc)	10V	65mOhm @ 23A, 10V	Through Hole	5V @ 1.3mA	98 nC @ 10 V	650 V	±30V	4075 pF @ 400 V	-	-	TO-247-3	-	337W (Tc)	-55°C ~ 150°C (TJ)
IMZA65R060M2HXKSA1 IMZA65R060M2HXKSA1 Infineon Technologies	400	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	32.8A (Tc)	15V, 20V	55mOhm @ 15.4A, 20V	Through Hole	5.6V @ 3.1mA	19 nC @ 18 V	650 V	+23V, -7V	669 pF @ 400 V	-	-	PG-TO247-4-8	-	130W (Tc)	-55°C ~ 175°C (TJ)

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