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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STP20N60M2-EP

STP20N60M2-EP

MOSFET N-CHANNEL 600V 13A TO220

STMicroelectronics

5,693 -
STP20N60M2-EP

数据表

MDmesh™ M2-EP TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V - Through Hole - - 600 V ±25V - - - TO-220 - 110W (Tc) -
IRF730STRRPBF

IRF730STRRPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix

9,046 -
IRF730STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 400 V ±20V 700 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
IRFR6215CPBF

IRFR6215CPBF

MOSFET P-CH 150V 13A DPAK

Infineon Technologies

2,153 -
IRFR6215CPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete P-Channel MOSFET (Metal Oxide) 13A (Tc) - 295mOhm @ 6.6A, 10V Surface Mount 4V @ 250µA 66 nC @ 10 V 150 V - 860 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -
FQA34N20L

FQA34N20L

MOSFET N-CH 200V 34A TO3P

onsemi

5,624 -
FQA34N20L

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 5V, 10V 75mOhm @ 17A, 10V Through Hole 2V @ 250µA 72 nC @ 5 V 200 V ±20V 3900 pF @ 25 V - - TO-3P - 210W (Tc) -55°C ~ 150°C (TJ)
IPI070N08N3 G

IPI070N08N3 G

MOSFET N-CH 80V 80A TO262-3

Infineon Technologies

3,665 -
IPI070N08N3 G

数据表

OptiMOS™ 3 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 7mOhm @ 73A, 10V Through Hole 3.5V @ 73µA 56 nC @ 10 V 80 V ±20V 3840 pF @ 40 V - - PG-TO262-3 - 136W (Tc) -55°C ~ 175°C (TJ)
IRF610L

IRF610L

MOSFET N-CH 200V 3.3A TO262

Vishay Siliconix

7,451 -
IRF610L

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V Through Hole 4V @ 250µA 8.2 nC @ 10 V 200 V ±20V 140 pF @ 25 V - - TO-262 - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ)
NTB75N06LT4

NTB75N06LT4

MOSFET N-CH 60V 75A D2PAK

onsemi

8,261 -
NTB75N06LT4

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Ta) 5V 11mOhm @ 37.5A, 5V Surface Mount 2V @ 250µA 92 nC @ 5 V 60 V ±20V 4370 pF @ 25 V - - D2PAK - 2.4W (Ta), 214W (Tj) -55°C ~ 175°C (TJ)
FQB12N60TM_AM002

FQB12N60TM_AM002

MOSFET N-CH 600V 10.5A D2PAK

onsemi

8,953 -
FQB12N60TM_AM002

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V Surface Mount 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1900 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ)
FDB5800_F085

FDB5800_F085

MOSFET N-CH 60V 14A/80A D2PAK

onsemi

9,983 -
FDB5800_F085

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 80A (Tc) 4.5V, 10V 6mOhm @ 80A, 10V Surface Mount 2.5V @ 250µA 135 nC @ 10 V 60 V ±20V 6625 pF @ 15 V - - TO-263 (D2PAK) - 242W (Tc) -55°C ~ 175°C (TJ)
SI4362BDY-T1-E3

SI4362BDY-T1-E3

MOSFET N-CH 30V 29A 8SO

Vishay Siliconix

5,057 -
SI4362BDY-T1-E3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 4.5V, 10V 4.6mOhm @ 19.8A, 10V Surface Mount 2V @ 250µA 115 nC @ 10 V 30 V ±12V 4800 pF @ 15 V - - 8-SOIC - 3W (Ta), 6.6W (Tc) -55°C ~ 150°C (TJ)
SI4362BDY-T1-GE3

SI4362BDY-T1-GE3

MOSFET N-CH 30V 29A 8SO

Vishay Siliconix

9,338 -
SI4362BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 4.5V, 10V 4.6mOhm @ 19.8A, 10V Surface Mount 2V @ 250µA 115 nC @ 10 V 30 V ±12V 4800 pF @ 15 V - - 8-SOIC - 3W (Ta), 6.6W (Tc) -55°C ~ 150°C (TJ)
SI4413ADY-T1-GE3

SI4413ADY-T1-GE3

MOSFET P-CH 30V 10.5A 8SO

Vishay Siliconix

5,516 -
SI4413ADY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10.5A (Ta) 4.5V, 10V 7.5mOhm @ 13A, 10V Surface Mount 3V @ 250µA 95 nC @ 5 V 30 V ±20V - - - 8-SOIC - 1.5W (Ta) -55°C ~ 150°C (TJ)
PJMP099N60EC_T0_00601

PJMP099N60EC_T0_00601

600V/ 99M / 39A/ EASY TO DRIVER

Panjit International Inc.

2,000 -
PJMP099N60EC_T0_00601

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 39A (Tc) 10V 99mOhm @ 19.5A, 10V Through Hole 4V @ 250µA 60 nC @ 10 V 600 V ±30V 2568 pF @ 400 V - - TO-220AB-L - 308W (Tc) -55°C ~ 150°C (TJ)
IPTG020N13NM6ATMA1

IPTG020N13NM6ATMA1

TRENCH >=100V

Infineon Technologies

1,488 -
IPTG020N13NM6ATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SIHP074N65E-GE3

SIHP074N65E-GE3

E SERIES POWER MOSFET TO-220AB,

Vishay Siliconix

1,000 -
SIHP074N65E-GE3

数据表

E TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 79mOhm @ 15A, 10V Through Hole 5V @ 250µA 80 nC @ 10 V 650 V ±30V 2904 pF @ 100 V - - TO-220AB - 250W (Tc) -55°C ~ 150°C (TJ)
NVMTS001N06CLTXG

NVMTS001N06CLTXG

T6 60V LL PQFN8*8 EXPANSI

onsemi

5,433 -
NVMTS001N06CLTXG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active - - 56.9A (Ta), 398.2A (Tc) - - Surface Mount - - - - - AEC-Q101 - 8-DFNW (8.3x8.4) Automotive - -
IPQC60R040S7AXTMA1

IPQC60R040S7AXTMA1

MOSFET

Infineon Technologies

730 -
IPQC60R040S7AXTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 12V 40mOhm @ 13A, 12V Surface Mount 4.5V @ 790µA 83 nC @ 12 V 600 V ±20V - AEC-Q101 - PG-HDSOP-22 Automotive 272W (Tc) -40°C ~ 150°C (TJ)
SI4423DY-T1-GE3

SI4423DY-T1-GE3

MOSFET P-CH 20V 10A 8SO

Vishay Siliconix

5,568 -
SI4423DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 1.8V, 4.5V 7.5mOhm @ 14A, 4.5V Surface Mount 900mV @ 600µA 175 nC @ 5 V 20 V ±8V - - - 8-SOIC - 1.5W (Ta) -55°C ~ 150°C (TJ)
SI7368DP-T1-E3

SI7368DP-T1-E3

MOSFET N-CH 20V 13A PPAK SO-8

Vishay Siliconix

9,294 -
SI7368DP-T1-E3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 5.5mOhm @ 20A, 10V Surface Mount 1.8V @ 250µA 25 nC @ 4.5 V 20 V ±16V - - - PowerPAK® SO-8 - 1.7W (Ta) -55°C ~ 150°C (TJ)
SI7368DP-T1-GE3

SI7368DP-T1-GE3

MOSFET N-CH 20V 13A PPAK SO-8

Vishay Siliconix

3,764 -
SI7368DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 5.5mOhm @ 20A, 10V Surface Mount 1.8V @ 250µA 25 nC @ 4.5 V 20 V ±16V - - - PowerPAK® SO-8 - 1.7W (Ta) -55°C ~ 150°C (TJ)
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