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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SIHF6N65E-GE3 MOSFET N-CH 650V 7A TO220 Vishay Siliconix	5,336	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	600mOhm @ 3A, 10V	Through Hole	4V @ 250µA	48 nC @ 10 V	650 V	±30V	820 pF @ 100 V	-	-	TO-220 Full Pack	-	31W (Tc)	-55°C ~ 150°C (TJ)
NTHL075N065SC1 SILICON CARBIDE (SIC) MOSFET - E onsemi	730	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	38A (Tc)	15V, 18V	85mOhm @ 15A, 18V	Through Hole	4.3V @ 5mA	61 nC @ 18 V	650 V	+22V, -8V	1196 pF @ 325 V	-	-	TO-247-3	-	148W (Tc)	-55°C ~ 175°C (TJ)
SIHK075N60EF-T1GE3 E SERIES POWER MOSFET WITH FAST Vishay Siliconix	1,926	-	询价单	数据表	EF	8-PowerBSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	71mOhm @ 15A, 10V	Surface Mount	5V @ 250µA	72 nC @ 10 V	600 V	±30V	2954 pF @ 100 V	-	-	PowerPAK®10 x 12	-	192W (Tc)	-55°C ~ 150°C (TJ)
C3M0350120J-TR SIC, MOSFET, 350M,1200V, TO-263- Wolfspeed, Inc.	777	-	询价单	数据表	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	7.2A (Tc)	15V	455mOhm @ 3.6A, 15V	Surface Mount	3.6V @ 1mA	13 nC @ 15 V	1200 V	+15V, -4V	345 pF @ 1000 V	-	-	TO-263-7	-	40.8W (Tc)	-55°C ~ 150°C (TJ)
MSC060SMA070SCT/R MOSFET SIC 700 V 60 MOHM PSMT Microchip Technology	1,300	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC060SMA070SDT/R MOSFET SIC 700 V 60 MOHM TO-263- Microchip Technology	790	-	询价单	数据表	mSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	51A (Tc)	18V, 20V	75mOhm @ 20A, 20V	Surface Mount	5V @ 1mA	56 nC @ 20 V	700 V	+23V, -10V	1160 pF @ 700 V	-	-	TO-263-7	-	240W (Tc)	-55°C ~ 175°C (TJ)
IMZA65R050M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	205	-	询价单	数据表	CoolSiC™ Gen 2	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	38A (Tc)	15V, 20V	46mOhm @ 18.2A, 20V	Through Hole	5.6V @ 3.7mA	22 nC @ 18 V	650 V	+23V, -7V	790 pF @ 400 V	-	-	PG-TO247-4-8	-	153W (Tc)	-55°C ~ 175°C (TJ)
SICW1000N170A-BP N-CHANNEL MOSFET,TO-247AB Micro Commercial Co	300	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	3A	15V, 20V	1.32Ohm @ 1.5A, 20V	Through Hole	4.5V @ 1mA	15.5 nC @ 20 V	1700 V	+25V, -5V	124 pF @ 1000 V	-	-	TO-247AB	-	69W	-55°C ~ 150°C (TJ)
MSJB11N80A-TP N-CHANNEL MOSFET, D2-PAK Micro Commercial Co	1,600	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	470mOhm @ 7.1A, 10V	Surface Mount	4.5V @ 250µA	24 nC @ 10 V	800 V	±20V	958 pF @ 400 V	-	-	D2PAK	-	156W (Tj)	-55°C ~ 150°C (TJ)
AOK060V65X2 650V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	240	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	29A (Tc)	15V	80mOhm @ 6A, 15V	Through Hole	3.5V @ 6mA	39.4 nC @ 15 V	650 V	+15V, -5V	1165 pF @ 400 V	-	-	TO-247	-	103W (Tc)	-55°C ~ 175°C (TJ)
AOM060V65X2 650V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	240	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	29A (Tc)	15V	80mOhm @ 6A, 15V	Through Hole	3.5V @ 6mA	39.4 nC @ 15 V	650 V	+15V, -5V	1165 pF @ 400 V	-	-	TO-247-4L	-	103W (Tc)	-55°C ~ 175°C (TJ)
SIHF074N65E-GE3 E SERIES POWER MOSFET TO-220 FUL Vishay Siliconix	988	-	询价单	数据表	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	79mOhm @ 15A, 10V	Through Hole	5V @ 250µA	80 nC @ 10 V	650 V	±30V	2904 pF @ 100 V	-	-	TO-220 Full Pack	-	39W (Tc)	-55°C ~ 150°C (TJ)
FCMT080N65S3 MOSFET N-CH 650V 38A 4TDFN onsemi	3,000	-	询价单	数据表	SuperFET® III	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	80mOhm @ 19A, 10V	Surface Mount	4.5V @ 880µA	71 nC @ 10 V	650 V	±30V	2765 pF @ 400 V	-	-	4-TDFN (8x8)	-	260W (Tc)	-55°C ~ 150°C (TJ)
SICW400N170A-BP MOSFET N-CH 1700V 6A TO247AB Micro Commercial Co	1,795	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	6A (Tc)	16V, 20V	500mOhm @ 3A, 20V	Through Hole	4.5V @ 5mA	31 nC @ 20 V	1700 V	+25V, -5V	333 pF @ 1000 V	-	-	TO-247AB	-	125W (Tc)	-55°C ~ 175°C (TJ)
NTBG032N065M3S SIC MOS D2PAK-7L 32MOHM 650V M3S onsemi	615	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	52A (Tc)	15V, 18V	44mOhm @ 15A, 18V	Surface Mount	4V @ 7.5mA	55 nC @ 18 V	650 V	+22V, -8V	1409 pF @ 400 V	-	-	D2PAK-7	-	200W (Tc)	-55°C ~ 175°C (TJ)
PSMN015N10NS2_R2_00201 100V/ 1.5M / TOLL FOR ESS/ BBU/ Panjit International Inc.	1,484	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	395A	4.5V, 10V	-	Surface Mount	-	128 nC @ 10 V	100 V	±20V	-	-	-	TOLL	-	-	-
IMT40R025M2HXTMA1 SIC-MOS Infineon Technologies	1,988	-	询价单	数据表	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	9A (Ta), 68A (Tc)	15V, 18V	32.1mOhm @ 15.7A, 18V	Surface Mount	5.6V @ 5.6mA	36 nC @ 18 V	400 V	+23V, -7V	1690 pF @ 200 V	-	-	PG-HSOF-8-2	-	3.8W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)
IMZA75R060M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	238	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	32A (Tc)	15V, 20V	55mOhm @ 11.1A, 20V	Through Hole	5.6V @ 4mA	23 nC @ 18 V	750 V	+23V, -5V	779 pF @ 500 V	-	-	PG-TO247-4	-	144W (Tc)	-55°C ~ 175°C (TJ)
AOK150V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	240	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	20A (Tc)	15V	195mOhm @ 3.9A, 15V	Through Hole	3.6V @ 3.9mA	28.3 nC @ 15 V	1200 V	+18V, -8V	664 pF @ 800 V	AEC-Q101	-	TO-247	Automotive	115W (Tj)	-55°C ~ 175°C (TJ)
IRFZ44N,127 MOSFET N-CH 55V 49A TO220AB NXP USA Inc.	3,140	-	询价单	数据表	TrenchMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	22mOhm @ 25A, 10V	Through Hole	4V @ 1mA	62 nC @ 10 V	55 V	±20V	1800 pF @ 25 V	-	-	TO-220AB	-	110W (Tc)	-55°C ~ 175°C (TJ)

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