富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTY01N80

IXTY01N80

MOSFET N-CH 800V 100MA TO252AA

IXYS

6,299 -
IXTY01N80

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Tc) 10V 50Ohm @ 100mA, 10V Surface Mount 4.5V @ 25µA 8 nC @ 10 V 800 V ±20V 60 pF @ 25 V - - TO-252AA - 25W (Tc) -55°C ~ 150°C (TJ)
NTMFS6B14NT3G

NTMFS6B14NT3G

MOSFET N-CH 100V 10A/50A 5DFN

onsemi

2,230 -
NTMFS6B14NT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta), 50A (Tc) 6V, 10V 15mOhm @ 20A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 100 V ±20V 1300 pF @ 50 V - - 5-DFN (5x6) (8-SOFL) - 3.1W (Ta), 77W (Tc) -55°C ~ 150°C (TJ)
STP22NS25Z

STP22NS25Z

MOSFET N-CH 250V 22A TO220AB

STMicroelectronics

6,252 -
STP22NS25Z

数据表

MESH OVERLAY™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 150mOhm @ 11A, 10V Through Hole 4V @ 250µA 151 nC @ 10 V 250 V ±20V 2400 pF @ 25 V - - TO-220 - 135W (Tc) -55°C ~ 150°C (TJ)
IQE036N08NM6CGATMA1

IQE036N08NM6CGATMA1

TRENCH 40<-<100V

Infineon Technologies

6,571 -
IQE036N08NM6CGATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IQE036N08NM6ATMA1

IQE036N08NM6ATMA1

TRENCH 40<-<100V

Infineon Technologies

4,100 -
IQE036N08NM6ATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AOTL66912Q

AOTL66912Q

LINEAR IC

Alpha & Omega Semiconductor Inc.

1,898 -
AOTL66912Q

数据表

AlphaSGT™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 53A (Ta), 370A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V Surface Mount 3.5V @ 250µA 220 nC @ 10 V 100 V ±20V 12500 pF @ 50 V AEC-Q101 - TOLLA Automotive 10W (Ta), 500W (Tc) -55°C ~ 175°C (TJ)
FDD6690A

FDD6690A

MOSFET N-CH 30V 12A/46A DPAK

onsemi

6,789 -
FDD6690A

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 46A (Tc) 4.5V, 10V 12mOhm @ 12A, 10V Surface Mount 3V @ 250µA 18 nC @ 5 V 30 V ±20V 1230 pF @ 15 V - - TO-252AA - 3.3W (Ta), 56W (Tc) -55°C ~ 175°C (TJ)
IMT65R072M1HXUMA1

IMT65R072M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,919 -
IMT65R072M1HXUMA1

数据表

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) - 18V - Surface Mount - - 650 V - - - - PG-HSOF-8-2 - - -
FDS8874

FDS8874

MOSFET N-CH 30V 16A 8SOIC

onsemi

3,644 -
FDS8874

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 5.5mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 72 nC @ 10 V 30 V ±20V 3990 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
IPB075N04LGATMA1

IPB075N04LGATMA1

MOSFET N-CH 40V 50A D2PAK

Infineon Technologies

3,855 -
IPB075N04LGATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 7.5mOhm @ 50A, 10V Surface Mount 2V @ 20µA 36 nC @ 10 V 40 V ±20V 2800 pF @ 25 V - - PG-TO263-3 - 56W (Tc) -55°C ~ 175°C (TJ)
IRFHM9331TR2PBF

IRFHM9331TR2PBF

MOSFET P-CH 30V 11A 3X3 PQFN

Infineon Technologies

6,344 -
IRFHM9331TR2PBF

数据表

- 8-PowerTDFN Cut Tape (CT) Obsolete P-Channel MOSFET (Metal Oxide) 11A (Ta), 24A (Tc) - 10mOhm @ 11A, 20V Surface Mount 2.4V @ 25µA 48 nC @ 10 V 30 V - 1543 pF @ 25 V - - PQFN (3x3) - - -
IRFH7914TRPBF

IRFH7914TRPBF

MOSFET N-CH 30V 15A/35A 8PQFN

Infineon Technologies

2,153 -
IRFH7914TRPBF

数据表

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta), 35A (Tc) 4.5V, 10V 8.7mOhm @ 14A, 10V Surface Mount 2.35V @ 25µA 12 nC @ 4.5 V 30 V ±20V 1160 pF @ 15 V - - 8-PQFN (5x6) - 3.1W (Ta) -55°C ~ 150°C (TJ)
RX3G18BBGC16

RX3G18BBGC16

NCH 40V 180A, TO-220AB, POWER MO

Rohm Semiconductor

937 -
RX3G18BBGC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 4.5V, 10V 1.47mOhm @ 90A, 10V Through Hole 2.5V @ 1mA 210 nC @ 10 V 40 V ±20V 13200 pF @ 20 V - - TO-220AB - 192W (Tc) 150°C (TJ)
SI4410BDY-T1-GE3

SI4410BDY-T1-GE3

MOSFET N-CH 30V 7.5A 8SO

Vishay Siliconix

5,736 -
SI4410BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 10V 13.5mOhm @ 10A, 10V Surface Mount 3V @ 250µA 20 nC @ 5 V 30 V ±20V - - - 8-SOIC - 1.4W (Ta) -55°C ~ 150°C (TJ)
FDMC7582

FDMC7582

MOSFET N-CH 25V 16.7A/49A PWR33

onsemi

4,219 -
FDMC7582

数据表

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16.7A (Ta), 49A (Tc) 4.5V, 10V 5mOhm @ 16.7A, 10V Surface Mount 2.5V @ 250µA 28 nC @ 10 V 25 V ±20V 1795 pF @ 13 V - - Power33 - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
PJL9421_R2_00001

PJL9421_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,890 -
PJL9421_R2_00001

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.8A (Ta) 4.5V, 10V 17mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 19 nC @ 4.5 V 40 V ±20V 2030 pF @ 25 V - - 8-SOP - 2.1W (Ta) -55°C ~ 150°C (TJ)
DI050N06D1-Q

DI050N06D1-Q

MOSFET, DPAK, N, 60V, 50A

Diotec Semiconductor

2,792 -
DI050N06D1-Q

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 11mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 14 nC @ 10 V 65 V ±20V 825 pF @ 30 V - - TO-252-3, DPak - 42W (Tc) -55°C ~ 150°C (TJ)
STF10N62K3

STF10N62K3

MOSFET N-CH 620V 8.4A TO220FP

STMicroelectronics

6,290 -
STF10N62K3

数据表

SuperMESH3™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8.4A (Tc) 10V 750mOhm @ 4A, 10V Through Hole 4.5V @ 100µA 42 nC @ 10 V 620 V ±30V 1250 pF @ 50 V - - TO-220FP - 30W (Tc) -55°C ~ 150°C (TJ)
STP8NM60N

STP8NM60N

MOSFET N-CH 600V 7A TO220AB

STMicroelectronics

5,077 -
STP8NM60N

数据表

MDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 650mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 600 V ±25V 560 pF @ 50 V - - TO-220 - 70W (Tc) -55°C ~ 150°C (TJ)
STP10NM50N

STP10NM50N

MOSFET N-CH 500V 7A TO220

STMicroelectronics

4,513 -
STP10NM50N

数据表

MDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 630mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 500 V ±25V 450 pF @ 50 V - - TO-220 - 70W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户