Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 70

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK5A55D(STA4,Q,M) MOSFET N-CH 550V 5A TO220SIS Toshiba Semiconductor and Storage	14	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.7Ohm @ 2.5A, 10V	Through Hole	4.4V @ 1mA	11 nC @ 10 V	550 V	±30V	540 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK7A45DA(STA4,Q,M) MOSFET N-CH 450V 6.5A TO220SIS Toshiba Semiconductor and Storage	9,863	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6.5A (Ta)	10V	1.2Ohm @ 3.3A, 10V	Through Hole	4.4V @ 1mA	11 nC @ 10 V	450 V	±30V	540 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TK5A90E,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	25	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Ta)	10V	3.1Ohm @ 2.3A, 10V	Through Hole	4V @ 450µA	20 nC @ 10 V	900 V	±30V	950 pF @ 25 V	-	-	TO-220SIS	-	40W (Tc)	150°C
TK6A55DA(STA4,Q,M) MOSFET N-CH 550V 5.5A TO220SIS Toshiba Semiconductor and Storage	7,094	-	询价单	数据表	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.5A (Ta)	10V	1.48Ohm @ 2.8A, 10V	Through Hole	4.4V @ 1mA	12 nC @ 10 V	550 V	±30V	600 pF @ 25 V	-	-	TO-220SIS	-	35W (Tc)	150°C (TJ)
TPC6011(TE85L,F,M) MOSFET N-CH 30V 6A VS-6 Toshiba Semiconductor and Storage	2,346	-	询价单	数据表	U-MOSIV	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	4.5V, 10V	20mOhm @ 3A, 10V	Surface Mount	2.5V @ 1mA	14 nC @ 10 V	30 V	±20V	640 pF @ 10 V	-	-	VS-6 (2.9x2.8)	-	700mW (Ta)	150°C (TJ)
TPC6012(TE85L,F,M) MOSFET N-CH 20V 6A VS-6 Toshiba Semiconductor and Storage	4,709	-	询价单	数据表	U-MOSIV	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	2.5V, 4.5V	20mOhm @ 3A, 4.5V	Surface Mount	1.2V @ 200µA	9 nC @ 5 V	20 V	±12V	630 pF @ 10 V	-	-	VS-6 (2.9x2.8)	-	700mW (Ta)	150°C (TJ)
TPC6110(TE85L,F,M) MOSFET P-CH 30V 4.5A VS-6 Toshiba Semiconductor and Storage	6,510	-	询价单	数据表	U-MOSVI	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.5A (Ta)	-	56mOhm @ 2.2A, 10V	Surface Mount	2V @ 100µA	14 nC @ 10 V	30 V	-	510 pF @ 10 V	-	-	VS-6 (2.9x2.8)	-	700mW (Ta)	150°C (TJ)
TPC6113(TE85L,F,M) MOSFET P-CH 20V 5A VS-6 Toshiba Semiconductor and Storage	8,423	-	询价单	数据表	U-MOSVI	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5A (Ta)	2.5V, 4.5V	55mOhm @ 2.5A, 4.5V	Surface Mount	1.2V @ 200µA	10 nC @ 5 V	20 V	±12V	690 pF @ 10 V	-	-	VS-6 (2.9x2.8)	-	700mW (Ta)	150°C (TJ)
TPC8062-H,LQ(CM MOSFET N-CH 30V 18A 8SOP Toshiba Semiconductor and Storage	4,584	-	询价单	数据表	U-MOSVII-H	8-SOIC (0.173", 4.40mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	4.5V, 10V	5.8mOhm @ 9A, 10V	Surface Mount	2.3V @ 300µA	34 nC @ 10 V	30 V	±20V	2900 pF @ 10 V	-	-	8-SOP	-	1W (Ta)	150°C (TJ)
TPC8065-H,LQ(S MOSFET N-CH 30V 13A 8SOP Toshiba Semiconductor and Storage	3,654	-	询价单	数据表	U-MOSVII-H	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	4.5V, 10V	11.6mOhm @ 6.5A, 10V	Surface Mount	2.3V @ 200µA	20 nC @ 10 V	30 V	±20V	1350 pF @ 10 V	-	-	8-SOP	-	1W (Ta)	150°C (TJ)

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