订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK80S06K3L(T6L1,NQMOSFET N-CH 60V 80A DPAK Toshiba Semiconductor and Storage |
8,637 | - |
|
数据表 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Ta) | 6V, 10V | 5.5mOhm @ 40A, 10V | Surface Mount | 3V @ 1mA | 85 nC @ 10 V | 60 V | ±20V | 4200 pF @ 10 V | - | - | DPAK+ | - | 100W (Tc) | 175°C (TJ) |
|
TK8A60DA(STA4,Q,M)MOSFET N-CH 600V 7.5A TO220SIS Toshiba Semiconductor and Storage |
3,828 | - |
|
数据表 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.5A (Ta) | 10V | 1Ohm @ 4A, 10V | Through Hole | 4V @ 1mA | 20 nC @ 10 V | 600 V | ±30V | 1050 pF @ 25 V | - | - | TO-220SIS | - | 45W (Tc) | 150°C (TJ) |
|
TPC6008-H(TE85L,FMMOSFET N-CH 30V 5.9A VS-6 Toshiba Semiconductor and Storage |
7,232 | - |
|
数据表 |
U-MOSVI-H | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.9A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | Surface Mount | 2.3V @ 100µA | 4.8 nC @ 10 V | 30 V | ±20V | 300 pF @ 10 V | - | - | VS-6 (2.9x2.8) | - | 700mW (Ta) | 150°C (TJ) |
|
TK5A65W,S5XMOSFET N-CH 650V 5.2A TO220SIS Toshiba Semiconductor and Storage |
8,447 | - |
|
数据表 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 5.2A (Ta) | 10V | 1.2Ohm @ 2.6A, 10V | Through Hole | 3.5V @ 170µA | 10.5 nC @ 10 V | 650 V | ±30V | 380 pF @ 300 V | - | - | TO-220SIS | - | 30W (Tc) | 150°C (TJ) |
|
TK3A90E,S4XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
8,738 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2.5A (Ta) | 10V | 4.6Ohm @ 1.3A, 10V | Through Hole | 4V @ 250µA | 15 nC @ 10 V | 900 V | ±30V | 650 pF @ 25 V | - | - | TO-220SIS | - | 35W (Tc) | 150°C |
|
|
TK6A45DA(STA4,Q,M)MOSFET N-CH 450V 5.5A TO220SIS Toshiba Semiconductor and Storage |
21 | - |
|
数据表 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 5.5A (Ta) | 10V | 1.35Ohm @ 2.8A, 10V | Through Hole | 4.4V @ 1mA | 11 nC @ 10 V | 450 V | ±30V | 490 pF @ 25 V | - | - | TO-220SIS | - | - | 150°C (TJ) |
|
TPC8133,LQ(SMOSFET P-CH 40V 9A 8SOP Toshiba Semiconductor and Storage |
20 | - |
|
数据表 |
U-MOSVI | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 9A (Ta) | 4.5V, 10V | 15mOhm @ 4.5A, 10V | Surface Mount | 2V @ 500µA | 64 nC @ 10 V | 40 V | +20V, -25V | 2900 pF @ 10 V | - | - | 8-SOP | - | 1W (Ta) | 150°C (TJ) |
|
|
TPC6009-H(TE85L,FMMOSFET N-CH 40V 5.3A VS-6 Toshiba Semiconductor and Storage |
6,673 | - |
|
数据表 |
U-MOSVI-H | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.3A (Ta) | 4.5V, 10V | 81mOhm @ 2.7A, 10V | Surface Mount | 2.3V @ 100µA | 4.7 nC @ 10 V | 40 V | ±20V | 290 pF @ 10 V | - | - | VS-6 (2.9x2.8) | - | 700mW (Ta) | 150°C (TJ) |
|
|
TPC6010-H(TE85L,FMMOSFET N-CH 60V 6.1A VS-6 Toshiba Semiconductor and Storage |
9,673 | - |
|
数据表 |
U-MOSVI-H | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.1A (Ta) | 4.5V, 10V | 59mOhm @ 3.1A, 10V | Surface Mount | 2.3V @ 100µA | 12 nC @ 10 V | 60 V | ±20V | 830 pF @ 10 V | - | - | VS-6 (2.9x2.8) | - | 700mW (Ta) | 150°C (TJ) |
|
TK42E12N1,S1XMOSFET N CH 120V 88A TO-220 Toshiba Semiconductor and Storage |
8 | - |
|
数据表 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 88A (Tc) | 10V | 9.4mOhm @ 21A, 10V | Through Hole | 4V @ 1mA | 52 nC @ 10 V | 120 V | ±20V | 3100 pF @ 60 V | - | - | TO-220 | - | 140W (Tc) | 150°C (TJ) |
