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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFJ80N25X3

IXFJ80N25X3

MOSFET N-CH 250V 44A ISO TO247-3

IXYS

1 -
IXFJ80N25X3

数据表

HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 18mOhm @ 40A, 10V Through Hole 4.5V @ 1.5mA 83 nC @ 10 V 250 V ±20V 5430 pF @ 25 V - - ISO TO-247-3 - 104W (Tc) -55°C ~ 150°C (TJ)
IXFT50N50P3

IXFT50N50P3

MOSFET N-CH 500V 50A TO268

IXYS

15 -
IXFT50N50P3

数据表

HiPerFET™, Polar3™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 120mOhm @ 25A, 10V Surface Mount 5V @ 4mA 85 nC @ 0 V 500 V ±30V 4335 pF @ 25 V - - TO-268AA - 960W (Tc) -55°C ~ 150°C (TJ)
IXFT30N85XHV

IXFT30N85XHV

MOSFET N-CH 850V 30A TO268

IXYS

6 -
IXFT30N85XHV

数据表

HiPerFET™, Ultra X TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 220mOhm @ 500mA, 10V Surface Mount 5.5V @ 2.5mA 68 nC @ 10 V 850 V ±30V 2460 pF @ 25 V - - TO-268HV (IXFT) - 695W (Tc) -55°C ~ 150°C (TJ)
IXFR36N50P

IXFR36N50P

MOSFET N-CH 500V 19A ISOPLUS247

IXYS

22 -
IXFR36N50P

数据表

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 190mOhm @ 18A, 10V Through Hole 5V @ 4mA 93 nC @ 10 V 500 V ±30V 5500 pF @ 25 V - - ISOPLUS247™ - 156W (Tc) -55°C ~ 150°C (TJ)
IXTT440N055T2

IXTT440N055T2

MOSFET N-CH 55V 440A TO268

IXYS

2,454 -
IXTT440N055T2

数据表

TrenchT2™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 440A (Tc) 10V 1.8mOhm @ 100A, 10V Surface Mount 4V @ 250µA 405 nC @ 10 V 55 V ±20V 25000 pF @ 25 V - - TO-268AA - 1000W (Tc) -55°C ~ 175°C (TJ)
IXFK102N30P

IXFK102N30P

MOSFET N-CH 300V 102A TO264AA

IXYS

5 -
IXFK102N30P

数据表

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 102A (Tc) 10V 33mOhm @ 500mA, 10V Through Hole 5V @ 4mA 224 nC @ 10 V 300 V ±20V 7500 pF @ 25 V - - TO-264AA (IXFK) - 700W (Tc) -55°C ~ 150°C (TJ)
IXTT75N10L2

IXTT75N10L2

MOSFET N-CH 100V 75A TO268

IXYS

12 -
IXTT75N10L2

数据表

Linear L2™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 21mOhm @ 500mA, 10V Surface Mount 4.5V @ 250µA 215 nC @ 10 V 100 V ±20V 8100 pF @ 25 V - - TO-268AA - 400W (Tc) -55°C ~ 150°C (TJ)
IXFK180N15P

IXFK180N15P

MOSFET N-CH 150V 180A TO264AA

IXYS

7,732 -
IXFK180N15P

数据表

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 11mOhm @ 90A, 10V Through Hole 5V @ 4mA 240 nC @ 10 V 150 V ±20V 7000 pF @ 25 V - - TO-264AA (IXFK) - 830W (Tc) -55°C ~ 175°C (TJ)
IXFT26N100XHV

IXFT26N100XHV

MOSFET N-CH 1000V 26A TO268HV

IXYS

23 -
IXFT26N100XHV

数据表

HiPerFET™, Ultra X TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 26A (Ta) 10V 320mOhm @ 500mA, 10V Surface Mount 6V @ 4mA 113 nC @ 10 V 1000 V ±30V 3290 pF @ 25 V - - TO-268HV (IXFT) - 860mW (Ta) -55°C ~ 150°C (TJ)
IXFX240N15T2

IXFX240N15T2

MOSFET N-CH 150V 240A PLUS247-3

IXYS

4 -
IXFX240N15T2

数据表

HiPerFET™, TrenchT2™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 5.2mOhm @ 60A, 10V Through Hole 5V @ 8mA 460 nC @ 10 V 150 V ±20V 32000 pF @ 25 V - - PLUS247™-3 - 1250W (Tc) -55°C ~ 175°C (TJ)
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