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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFT320N10T2

IXFT320N10T2

MOSFET N-CH 100V 320A TO268

IXYS

3 -
IXFT320N10T2

数据表

HiPerFET™, TrenchT2™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 320A (Tc) 10V 3.5mOhm @ 100A, 10V Surface Mount 4V @ 250µA 430 nC @ 10 V 100 V ±20V 26000 pF @ 25 V - - TO-268AA - 1000W (Tc) -55°C ~ 175°C (TJ)
IXFN48N60P

IXFN48N60P

MOSFET N-CH 600V 40A SOT227B

IXYS

9,569 -
IXFN48N60P

数据表

HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 140mOhm @ 4A, 10V Chassis Mount 5.5V @ 8mA 150 nC @ 10 V 600 V ±30V 8860 pF @ 25 V - - SOT-227B - 625W (Tc) -55°C ~ 150°C (TJ)
IXTN62N50L

IXTN62N50L

MOSFET N-CH 500V 62A SOT227B

IXYS

2,139 -
IXTN62N50L

数据表

Linear SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 62A (Tc) 20V 100mOhm @ 500mA, 20V Chassis Mount 5V @ 250µA 550 nC @ 20 V 500 V ±30V 11500 pF @ 25 V - - SOT-227B - 800W (Tc) -55°C ~ 150°C (TJ)
IXFN50N120SIC

IXFN50N120SIC

SICFET N-CH 1200V 47A SOT227B

IXYS

9,273 -
IXFN50N120SIC

数据表

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 47A (Tc) 20V 50mOhm @ 40A, 20V Chassis Mount 2.4V @ 10mA 100 nC @ 20 V 1200 V +20V, -5V 1900 pF @ 1000 V - - SOT-227B - - -40°C ~ 150°C (TJ)
IXTU2N80P

IXTU2N80P

MOSFET N-CH 800V 2A TO251

IXYS

4,608 -
IXTU2N80P

数据表

PolarHV™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 6Ohm @ 1A, 10V Through Hole 5.5V @ 50µA 10.6 nC @ 10 V 800 V ±30V 440 pF @ 25 V - - TO-251AA - 70W (Tc) -55°C ~ 150°C (TJ)
IXTY4N60P

IXTY4N60P

MOSFET N-CH 600V 4A TO252

IXYS

8,738 -
IXTY4N60P

数据表

PolarHV™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2Ohm @ 2A, 10V Surface Mount 5.5V @ 100µA 13 nC @ 10 V 600 V ±30V 635 pF @ 25 V - - TO-252AA - 89W (Tc) -55°C ~ 150°C (TJ)
IXTV02N250S

IXTV02N250S

MOSFET N-CH 2500V 200MA PLUS220

IXYS

5,575 -
IXTV02N250S

数据表

- PLUS-220SMD Tube Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Tc) 10V 450Ohm @ 50mA, 10V Surface Mount 4.5V @ 250µA 7.4 nC @ 10 V 2500 V ±20V 116 pF @ 25 V - - PLUS-220SMD - 83W (Tc) -55°C ~ 150°C (TJ)
IXTV03N400S

IXTV03N400S

MOSFET N-CH 4000V 300MA PLUS220

IXYS

2,382 -
IXTV03N400S

数据表

- PLUS-220SMD Tube Obsolete N-Channel MOSFET (Metal Oxide) 300mA (Tc) 10V 290Ohm @ 500mA, 10V Surface Mount 4V @ 250µA 16.3 nC @ 10 V 4000 V ±20V 435 pF @ 25 V - - PLUS-220SMD - 130W (Tc) -55°C ~ 150°C (TJ)
IXTA1N100P

IXTA1N100P

MOSFET N-CH 1000V 1A TO263

IXYS

9,789 -
IXTA1N100P

数据表

Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 15Ohm @ 500mA, 10V Surface Mount 4.5V @ 50µA 15.5 nC @ 10 V 1000 V ±20V 331 pF @ 25 V - - TO-263AA - 50W (Tc) -55°C ~ 150°C (TJ)
IXTP4N70X2M

IXTP4N70X2M

MOSFET N-CH 700V 4A TO220

IXYS

24 -
IXTP4N70X2M

数据表

Ultra X2 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 850mOhm @ 2A, 10V Through Hole 4.5V @ 250µA 11.8 nC @ 10 V 700 V ±30V 386 pF @ 25 V - - TO-220 Isolated Tab - 30W (Tc) -55°C ~ 150°C (TJ)
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