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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTQ80N28T

IXTQ80N28T

MOSFET N-CH 280V 80A TO3P

IXYS

9,592 -
IXTQ80N28T

数据表

- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 49mOhm @ 500mA, 10V Through Hole 5V @ 1mA 115 nC @ 10 V 280 V ±30V 5000 pF @ 25 V - - TO-3P - 500W (Tc) -55°C ~ 150°C (TJ)
IXTT30N50L

IXTT30N50L

MOSFET N-CH 500V 30A TO268

IXYS

8,109 -
IXTT30N50L

数据表

Linear TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 200mOhm @ 15A, 10V Surface Mount 4.5V @ 250µA 240 nC @ 10 V 500 V ±20V 10200 pF @ 25 V - - TO-268AA - 400W (Tc) -55°C ~ 150°C (TJ)
IXTT75N10

IXTT75N10

MOSFET N-CH 100V 75A TO268

IXYS

9,767 -
IXTT75N10

数据表

MegaMOS™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 20mOhm @ 37.5A, 10V Surface Mount 4V @ 4mA 260 nC @ 10 V 100 V ±20V 4500 pF @ 25 V - - TO-268AA - 300W (Tc) -55°C ~ 150°C (TJ)
IXFK210N17T

IXFK210N17T

MOSFET N-CH 170V 210A TO264AA

IXYS

7,541 -
IXFK210N17T

数据表

GigaMOS™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 210A (Tc) 10V 7.5mOhm @ 60A, 10V Through Hole 5V @ 4mA 285 nC @ 10 V 170 V ±20V 18800 pF @ 25 V - - TO-264AA (IXFK) - 1150W (Tc) -55°C ~ 175°C (TJ)
IXFX210N17T

IXFX210N17T

MOSFET N-CH 170V 210A PLUS247-3

IXYS

3,370 -
IXFX210N17T

数据表

GigaMOS™ TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 210A (Tc) 10V 7.5mOhm @ 60A, 10V Through Hole 5V @ 4mA 285 nC @ 10 V 170 V ±20V 18800 pF @ 25 V - - PLUS247™-3 - 1150W (Tc) -55°C ~ 175°C (TJ)
IXFN260N17T

IXFN260N17T

MOSFET N-CH 170V 245A SOT227B

IXYS

8,227 -
IXFN260N17T

数据表

GigaMOS™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 245A (Tc) 10V 6.5mOhm @ 60A, 10V Chassis Mount 5V @ 8mA 400 nC @ 10 V 170 V ±20V 24000 pF @ 25 V - - SOT-227B - 1090W (Tc) -55°C ~ 175°C (TJ)
IXFK260N17T

IXFK260N17T

MOSFET N-CH 170V 260A TO264AA

IXYS

5,027 -
IXFK260N17T

数据表

GigaMOS™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 260A (Tc) 10V 6.5mOhm @ 60A, 10V Through Hole 5V @ 8mA 400 nC @ 10 V 170 V ±20V 24000 pF @ 25 V - - TO-264AA (IXFK) - 1670W (Tc) -55°C ~ 175°C (TJ)
IXFX260N17T

IXFX260N17T

MOSFET N-CH 170V 260A PLUS247-3

IXYS

6,452 -
IXFX260N17T

数据表

GigaMOS™ TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 260A (Tc) 10V 6.5mOhm @ 60A, 10V Through Hole 5V @ 8mA 400 nC @ 10 V 170 V ±20V 24000 pF @ 25 V - - PLUS247™-3 - 1670W (Tc) -55°C ~ 175°C (TJ)
IXFX64N50P

IXFX64N50P

MOSFET N-CH 500V 64A PLUS247-3

IXYS

2 -
IXFX64N50P

数据表

HiPerFET™, Polar TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 85mOhm @ 32A, 10V Through Hole 5.5V @ 8mA 150 nC @ 10 V 500 V ±30V 8700 pF @ 25 V - - PLUS247™-3 - 830W (Tc) -55°C ~ 150°C (TJ)
IXFX150N30P3

IXFX150N30P3

MOSFET N-CH 300V 150A PLUS247-3

IXYS

6,540 -
IXFX150N30P3

数据表

HiPerFET™, Polar3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 10V 19mOhm @ 75A, 10V Through Hole 5V @ 8mA 197 nC @ 10 V 300 V ±20V 12100 pF @ 25 V - - PLUS247™-3 - 1300W (Tc) -55°C ~ 150°C (TJ)
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