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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFN44N100P

IXFN44N100P

MOSFET N-CH 1000V 37A SOT-227B

IXYS

5,299 -
IXFN44N100P

数据表

HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 37A (Tc) 10V 220mOhm @ 22A, 10V Chassis Mount 6.5V @ 1mA 305 nC @ 10 V 1000 V ±30V 19000 pF @ 25 V - - SOT-227B - 890W (Tc) -55°C ~ 150°C (TJ)
MMIX1T550N055T2

MMIX1T550N055T2

MOSFET N-CH 55V 550A 24SMPD

IXYS

4 -
MMIX1T550N055T2

数据表

FRFET®, SupreMOS® 24-PowerSMD, 21 Leads Tube Active N-Channel MOSFET (Metal Oxide) 550A (Tc) 10V 1.3mOhm @ 100A, 10V Surface Mount 3.8V @ 250µA 595 nC @ 10 V 55 V ±20V 40000 pF @ 25 V - - 24-SMPD - 830W (Tc) -55°C ~ 175°C (TJ)
IXFN100N50Q3

IXFN100N50Q3

MOSFET N-CH 500V 82A SOT227B

IXYS

3 -
IXFN100N50Q3

数据表

HiPerFET™, Q3 Class SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 82A (Tc) 10V 49mOhm @ 50A, 10V Chassis Mount 6.5V @ 8mA 255 nC @ 10 V 500 V ±30V 13800 pF @ 25 V - - SOT-227B - 960W (Tc) -55°C ~ 150°C (TJ)
IXKN45N80C

IXKN45N80C

MOSFET N-CH 800V 44A SOT-227B

IXYS

3,998 -
IXKN45N80C

数据表

CoolMOS™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 74mOhm @ 44A, 10V Chassis Mount 3.9V @ 4mA 360 nC @ 10 V 800 V ±20V - - - SOT-227B - 380W (Tc) -55°C ~ 150°C (TJ)
IXFN74N100X

IXFN74N100X

MOSFET N-CH 1000V 74A SOT227B

IXYS

5,236 -
IXFN74N100X

数据表

HiPerFET™, Ultra X SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 74A (Tc) 10V 66mOhm @ 37A, 10V Chassis Mount 5.5V @ 8mA 425 nC @ 10 V 1000 V ±30V 17000 pF @ 25 V - - SOT-227B - 1170W (Tc) -55°C ~ 150°C (TJ)
IXFP130N15X3

IXFP130N15X3

MOSFET N-CH 150V 130A TO220AB

IXYS

1 -
IXFP130N15X3

数据表

HiPerFET™, Ultra X3 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 9mOhm @ 65A, 10V Through Hole 4.5V @ 1.5mA 80 nC @ 10 V 150 V ±20V 5230 pF @ 25 V - - TO-220-3 - 390W (Tc) -55°C ~ 150°C (TJ)
IXTH450P2

IXTH450P2

MOSFET N-CH 500V 16A TO247

IXYS

3,121 -
IXTH450P2

数据表

PolarP2™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 330mOhm @ 8A, 10V Through Hole 4.5V @ 250µA 43 nC @ 10 V 500 V ±30V 2530 pF @ 25 V - - TO-247 (IXTH) - 300W (Tc) -55°C ~ 150°C (TJ)
IXFR32N80Q3

IXFR32N80Q3

MOSFET N-CH 800V 24A ISOPLUS247

IXYS

3,235 -
IXFR32N80Q3

数据表

HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 300mOhm @ 16A, 10V Through Hole 6.5V @ 4mA 140 nC @ 10 V 800 V ±30V 6940 pF @ 25 V - - ISOPLUS247™ - 500W (Tc) -55°C ~ 150°C (TJ)
IXTN400N20X4

IXTN400N20X4

Ultra Junction X4-Class Power

IXYS

3,838 -
IXTN400N20X4

数据表

- SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 340A (Tc) 10V 3mOhm @ 100A, 10V Chassis Mount 4.5V @ 250µA 348 nC @ 10 V 200 V ±20V 27700 pF @ 25 V - - SOT-227B - miniBLOC - 830W (Tc) -55°C ~ 175°C (TJ)
IXTN500N20X4

IXTN500N20X4

Ultra Junction X4-Class Power

IXYS

6,952 -
IXTN500N20X4

数据表

- SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500A (Tc) 10V 1.99mOhm @ 100A, 10V Chassis Mount 4.5V @ 250µA 535 nC @ 10 V 200 V ±20V 41500 pF @ 25 V - - SOT-227B - miniBLOC - 1150W (Tc) -55°C ~ 175°C (TJ)
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