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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFK20N120P

IXFK20N120P

MOSFET N-CH 1200V 20A TO264AA

IXYS

3 -
IXFK20N120P

数据表

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 570mOhm @ 10A, 10V Through Hole 6.5V @ 1mA 193 nC @ 10 V 1200 V ±30V 11100 pF @ 25 V - - TO-264AA (IXFK) - 780W (Tc) -55°C ~ 150°C (TJ)
IXFR64N50Q3

IXFR64N50Q3

MOSFET N-CH 500V 45A ISOPLUS247

IXYS

1 -
IXFR64N50Q3

数据表

HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 95mOhm @ 32A, 10V Through Hole 6.5V @ 4mA 145 nC @ 10 V 500 V ±30V 6950 pF @ 25 V - - ISOPLUS247™ - 500W (Tc) -55°C ~ 150°C (TJ)
IXFX80N50Q3

IXFX80N50Q3

MOSFET N-CH 500V 80A PLUS247-3

IXYS

4,452 -
IXFX80N50Q3

数据表

HiPerFET™, Q3 Class TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 65mOhm @ 40A, 10V Through Hole 6.5V @ 8mA 200 nC @ 10 V 500 V ±30V 10000 pF @ 25 V - - PLUS247™-3 - 1250W (Tc) -55°C ~ 150°C (TJ)
IXFK80N50Q3

IXFK80N50Q3

MOSFET N-CH 500V 80A TO264AA

IXYS

1 -
IXFK80N50Q3

数据表

HiPerFET™, Q3 Class TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 65mOhm @ 40A, 10V Through Hole 6.5V @ 8mA 200 nC @ 10 V 500 V ±30V 10000 pF @ 25 V - - TO-264AA (IXFK) - 1250W (Tc) -55°C ~ 150°C (TJ)
IXFR15N100Q3

IXFR15N100Q3

MOSFET N-CH 1000V 10A ISOPLUS247

IXYS

6,218 -
IXFR15N100Q3

数据表

HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 1.2Ohm @ 7.5A, 10V Through Hole 6.5V @ 4mA 64 nC @ 10 V 1000 V ±30V 3250 pF @ 25 V - - ISOPLUS247™ - 400W (Tc) -55°C ~ 150°C (TJ)
IXFX94N50P2

IXFX94N50P2

MOSFET N-CH 500V 94A PLUS247-3

IXYS

5,844 -
IXFX94N50P2

数据表

HiPerFET™, PolarP2™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 94A (Tc) 10V 55mOhm @ 500mA, 10V Through Hole 5V @ 8mA 220 nC @ 10 V 500 V ±30V 13700 pF @ 25 V - - PLUS247™-3 - 1300W (Tc) -55°C ~ 150°C (TJ)
MMIX1F230N20T

MMIX1F230N20T

MOSFET N-CH 200V 168A 24SMPD

IXYS

7,030 -
MMIX1F230N20T

数据表

GigaMOS™, HiPerFET™, TrenchT2™ 24-PowerSMD, 21 Leads Tube Active N-Channel MOSFET (Metal Oxide) 168A (Tc) 10V 8.3mOhm @ 60A, 10V Surface Mount 5V @ 8mA 378 nC @ 10 V 200 V ±20V 28000 pF @ 25 V - - 24-SMPD - 600W (Tc) -55°C ~ 175°C (TJ)
MMIX1T600N04T2

MMIX1T600N04T2

MOSFET N-CH 40V 600A 24SMPD

IXYS

2,771 -
MMIX1T600N04T2

数据表

FRFET®, SupreMOS® 24-PowerSMD, 21 Leads Tube Active N-Channel MOSFET (Metal Oxide) 600A (Tc) 10V 1.3mOhm @ 100A, 10V Surface Mount 3.5V @ 250µA 590 nC @ 10 V 40 V ±20V 40000 pF @ 25 V - - 24-SMPD - 830W (Tc) -55°C ~ 175°C (TJ)
IXTK8N150L

IXTK8N150L

MOSFET N-CH 1500V 8A TO264

IXYS

3,381 -
IXTK8N150L

数据表

Linear TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 20V 3.6Ohm @ 4A, 20V Through Hole 8V @ 250µA 250 nC @ 15 V 1500 V ±30V 8000 pF @ 25 V - - TO-264 (IXTK) - 700W (Tc) -55°C ~ 150°C (TJ)
MMIX1T132N50P3

MMIX1T132N50P3

MOSFET N-CH 500V 63A POLAR3

IXYS

5,088 -
MMIX1T132N50P3

数据表

Polar™ 24-PowerSMD, 22 Leads Tube Active N-Channel MOSFET (Metal Oxide) 63A (Tc) 10V 43mOhm @ 66A, 10V Surface Mount 5V @ 8mA 267 nC @ 10 V 500 V ±30V 18600 pF @ 25 V - - Polar3™ - 520W (Tc) -55°C ~ 150°C (TJ)
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