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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTP8N70X2M

IXTP8N70X2M

MOSFET N-CH 700V 4A TO220

IXYS

12 -
IXTP8N70X2M

数据表

Ultra X2 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 550mOhm @ 500mA, 10V Through Hole 5V @ 250µA 12 nC @ 10 V 700 V ±30V 800 pF @ 10 V - - TO-220 Isolated Tab - 32W (Tc) -55°C ~ 150°C (TJ)
IXFY4N85X

IXFY4N85X

MOSFET N-CH 850V 3.5A TO252

IXYS

5,853 -
IXFY4N85X

数据表

HiPerFET™, Ultra X TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V Surface Mount 5.5V @ 250µA 7 nC @ 10 V 850 V ±30V 247 pF @ 25 V - - TO-252AA - 150W (Tc) -55°C ~ 150°C (TJ)
IXTA160N04T2

IXTA160N04T2

MOSFET N-CH 40V 160A TO263

IXYS

7 -
IXTA160N04T2

数据表

TrenchT2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 5mOhm @ 50A, 10V Surface Mount 4V @ 250µA 79 nC @ 10 V 40 V ±20V 4640 pF @ 25 V - - TO-263AA - 250W (Tc) -55°C ~ 175°C (TJ)
IXTF1N400

IXTF1N400

MOSFET N-CH 4000V 1A I4PAC

IXYS

5,641 -
IXTF1N400

数据表

- i4-Pac™-5 (3 Leads) Tube Obsolete N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 60Ohm @ 500mA, 10V Through Hole 4V @ 250µA 78 nC @ 10 V 4000 V ±20V 2530 pF @ 25 V - - ISOPLUS i4-PAC™ - 160W (Tc) -55°C ~ 150°C (TJ)
IXTA24N65X2

IXTA24N65X2

MOSFET N-CH 650V 24A TO263AA

IXYS

6,710 -
IXTA24N65X2

数据表

Ultra X2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 145mOhm @ 12A, 10V Surface Mount 5V @ 250µA 36 nC @ 10 V 650 V ±30V 2060 pF @ 25 V - - TO-263AA - 390W (Tc) -55°C ~ 150°C (TJ)
IXTY8N70X2

IXTY8N70X2

MOSFET N-CHANNEL 700V 8A TO252

IXYS

5,968 -
IXTY8N70X2

数据表

Ultra X2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 500mOhm @ 500mA, 10V Surface Mount 5V @ 250µA 12 nC @ 10 V 700 V ±30V 800 pF @ 10 V - - TO-252AA - 150W (Tc) -55°C ~ 150°C (TJ)
IXFQ60N25X3

IXFQ60N25X3

MOSFET N-CHANNEL 250V 60A TO3P

IXYS

7,048 -
IXFQ60N25X3

数据表

HiPerFET™, Ultra X3 TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 23mOhm @ 30A, 10V Through Hole 4.5V @ 1.5mA 50 nC @ 10 V 250 V ±20V 3610 pF @ 25 V - - TO-3P - 320W (Tc) -55°C ~ 150°C (TJ)
IXTP75N10P

IXTP75N10P

MOSFET N-CH 100V 75A TO220AB

IXYS

5 -
IXTP75N10P

数据表

Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 25mOhm @ 500mA, 10V Through Hole 5.5V @ 250µA 74 nC @ 10 V 100 V ±20V 2250 pF @ 25 V - - TO-220-3 - 360W (Tc) -55°C ~ 175°C (TJ)
IXFT60N50P3

IXFT60N50P3

MOSFET N-CH 500V 60A TO268

IXYS

6 -
IXFT60N50P3

数据表

HiPerFET™, Polar3™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 100mOhm @ 30A, 10V Surface Mount 5V @ 4mA 96 nC @ 10 V 500 V ±30V 6250 pF @ 25 V - - TO-268AA - 1040W (Tc) -55°C ~ 150°C (TJ)
IXFT60N65X2HV

IXFT60N65X2HV

MOSFET N-CH 650V 60A TO268HV

IXYS

3 -
IXFT60N65X2HV

数据表

HiPerFET™, Ultra X2 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 52mOhm @ 30A, 10V Surface Mount 5V @ 4mA 108 nC @ 10 V 650 V ±30V 6300 pF @ 25 V - - TO-268HV (IXFT) - 780W (Tc) -55°C ~ 150°C (TJ)
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