Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 25

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
HUF76113T3ST 4.7 A, 30 V, 0.031 OHM, N-CHANNE Harris Corporation	3,500	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFU322 N-CHANNEL POWER MOSFET Harris Corporation	898	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.6A (Ta)	10V	2.5Ohm @ 1.7A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	400 V	±20V	350 pF @ 25 V	-	-	IPAK	-	50W (Tc)	-55°C ~ 150°C (TJ)
HUF75321S3S MOSFET N-CH 55V 35A D2PAK Harris Corporation	991	-	询价单	数据表	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	34mOhm @ 35A, 10V	Surface Mount	4V @ 250µA	44 nC @ 20 V	55 V	±20V	680 pF @ 25 V	-	-	TO-263 (D2PAK)	-	93W (Tc)	-55°C ~ 175°C (TJ)
IRFR222 N-CHANNEL POWER MOSFET Harris Corporation	944	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.8A (Tc)	10V	1.2Ohm @ 2.4A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	200 V	±20V	330 pF @ 25 V	-	-	TO-252 (DPAK)	-	50W (Tc)	-55°C ~ 150°C (TJ)
IRFU222 N-CHANNEL POWER MOSFET Harris Corporation	900	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.8A (Tc)	10V	1.2Ohm @ 2.4A, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	200 V	±20V	330 pF @ 25 V	-	-	IPAK	-	50W (Tc)	-55°C ~ 150°C (TJ)
IRFU421 N-CHANNEL POWER MOSFET Harris Corporation	900	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	3Ohm @ 1.3A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	450 V	±20V	350 pF @ 25 V	-	-	IPAK	-	50W (Tc)	-55°C ~ 150°C (TJ)
IRFR421 N-CHANNEL POWER MOSFET Harris Corporation	1,000	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	3Ohm @ 1.3A, 10V	Surface Mount	4V @ 250µA	19 nC @ 10 V	450 V	±20V	350 pF @ 25 V	-	-	TO-252 (DPAK)	-	50W (Tc)	-55°C ~ 150°C (TJ)
IRF9622156 3A, 200V, 2.4OHM, P-CHANNEL, POW Harris Corporation	800	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF614 ADVANCED POWER MOSFET Harris Corporation	695	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.7A (Tc)	10V	2Ohm @ 1.6A, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	250 V	±20V	140 pF @ 25 V	-	-	TO-220AB	-	36W (Tc)	-55°C ~ 150°C (TJ)
IRFD121 SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation	1,000	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1.3A (Tc)	10V	300mOhm @ 600mA, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	80 V	±20V	450 pF @ 25 V	-	-	4-DIP, Hexdip	-	1W (Tc)	-55°C ~ 150°C (TJ)

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