Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 21

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFF9222 P-CHANNEL POWER MOSFET Harris Corporation	2,106	-	询价单	数据表	-	TO-205AF Metal Can	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	2A (Ta)	10V	2.4Ohm @ 1.5A, 10V	Through Hole	4V @ 250µA	22 nC @ 10 V	200 V	±20V	350 pF @ 25 V	-	-	TO-205AF (TO-39)	-	20W (Tc)	-55°C ~ 150°C (TJ)
RFP6N50 N-CHANNEL POWER MOSFET Harris Corporation	1,793	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	1.25Ohm @ 3A, 10V	Through Hole	4V @ 1mA	-	500 V	±20V	1500 pF @ 25 V	-	-	TO-220	-	75W (Tc)	-55°C ~ 150°C (TJ)
IRF9541 P-CHANNEL POWER MOSFET Harris Corporation	4,731	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V	200mOhm @ 10A, 10V	Through Hole	4V @ 250µA	90 nC @ 10 V	80 V	±20V	1100 pF @ 25 V	-	-	TO-220-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
HUF76137S3S N-CHANNEL POWER MOSFET Harris Corporation	197	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	4.5V, 10V	9mOhm @ 75A, 10V	Surface Mount	3V @ 250µA	72 nC @ 10 V	30 V	±16V	2100 pF @ 25 V	-	-	TO-263 (D2PAK)	-	145W (Tc)	-40°C ~ 150°C (TJ)
IRFD320 MOSFET N-CH 400V 490MA 4HVMDIP Harris Corporation	812	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	490mA (Ta)	-	1.8Ohm @ 210mA, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	400 V	±20V	410 pF @ 25 V	-	-	4-HVMDIP	-	1W (Ta)	-55°C ~ 150°C (TJ)
IRF9640S2497 11A, 200V, 0.500 OHM, P-CHANNEL Harris Corporation	250	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFP352 N-CHANNEL POWER MOSFET Harris Corporation	436	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	400mOhm @ 8.9A, 10V	Through Hole	4V @ 250µA	130 nC @ 10 V	400 V	±20V	2000 pF @ 25 V	-	-	TO-247	-	180W (Tc)	-55°C ~ 150°C (TJ)
IRF644 14A, 250V, 0.28 OHM, N-CHANNEL Harris Corporation	24,196	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	280mOhm @ 8.4A, 10V	Through Hole	4V @ 250µA	68 nC @ 10 V	250 V	±20V	1300 pF @ 25 V	-	-	TO-220AB	-	125W (Tc)	-55°C ~ 150°C (TJ)
IRF120 N-CHANNEL POWER MOSFET Harris Corporation	152	-	询价单	数据表	-	TO-204AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	300mOhm @ 4A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	100 V	±20V	600 pF @ 25 V	-	-	TO-3	-	40W (Tc)	-55°C ~ 150°C (TJ)
IRFP351 N-CHANNEL POWER MOSFET Harris Corporation	314	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	300mOhm @ 8.9A, 10V	Through Hole	4V @ 250µA	130 nC @ 10 V	350 V	±20V	2000 pF @ 25 V	-	-	TO-247	-	180W (Tc)	-55°C ~ 150°C (TJ)

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