Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 26

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RF1S45N02LSM N-CHANNEL POWER MOSFET Harris Corporation	800	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	45A	-	-	Surface Mount	-	-	20 V	-	-	-	-	TO-263AB	-	-	-
IRFD220 0.8A 200V 0.800 OHM N-CHANNEL Harris Corporation	913	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	800mA (Ta)	10V	800mOhm @ 480mA, 10V	Through Hole	4V @ 250µA	14 nC @ 10 V	200 V	±20V	260 pF @ 25 V	-	-	4-DIP, Hexdip, HVMDIP	-	1W (Ta)	-55°C ~ 150°C (TJ)
RFP4N40 N-CHANNEL POWER MOSFET Harris Corporation	546	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	2Ohm @ 2A, 10V	Through Hole	4V @ 1mA	-	400 V	±20V	750 pF @ 25 V	-	-	TO-220-3	-	60W (Tc)	-55°C ~ 150°C (TJ)
RF1S45N02L 45A, 20V, 0.022OHM, N-CHANNEL LO Harris Corporation	999	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	5V	22mOhm @ 45A, 5V	Through Hole	2V @ 250µA	60 nC @ 10 V	20 V	±10V	1300 pF @ 15 V	-	-	TO-262 (I2PAK)	-	90W (Tc)	-55°C ~ 175°C (TJ)
IRF626 N-CHANNEL POWER MOSFET Harris Corporation	997	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.8A (Tc)	10V	1.1Ohm @ 1.4A, 10V	Through Hole	4V @ 250µA	22 nC @ 10 V	275 V	±20V	340 pF @ 25 V	-	-	TO-220AB	-	40W (Tc)	-55°C ~ 150°C (TJ)
IRFR220 MOSFET N-CH 200V 4.6A TO252AA Harris Corporation	528	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.6A (Tc)	-	800mOhm @ 2.4A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	200 V	±20V	330 pF @ 25 V	-	-	TO-252AA	-	50W (Tc)	-55°C ~ 150°C (TJ)
BUZ76 N-CHANNEL POWER MOSFET Harris Corporation	700	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	1.8Ohm @ 2A, 10V	Through Hole	4V @ 1mA	-	400 V	±20V	650 pF @ 25 V	-	-	TO-220AB	-	40W (Tc)	-55°C ~ 150°C (TJ)
IRF730R4587 5.5A 400V 1.000 OHM N-CHANNEL Harris Corporation	1,000	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RF1S15N08L LOGIC LEVEL GATE (5V) DEVICE Harris Corporation	800	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	45A	-	-	Surface Mount	-	-	80 V	-	-	-	-	TO-263AB	-	-	-
IRFR9110 MOSFET P-CH 100V 3.1A DPAK Harris Corporation	554	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3.1A (Tc)	-	1.2Ohm @ 1.9A, 10V	Surface Mount	4V @ 250µA	8.7 nC @ 10 V	100 V	±20V	200 pF @ 25 V	-	-	TO-252AA (DPAK)	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)

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