Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 28

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFD313 N-CHANNEL POWER MOSFET Harris Corporation	900	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	300mA (Tc)	10V	5Ohm @ 200mA, 10V	Through Hole	4V @ 250µA	7.5 nC @ 10 V	350 V	±20V	135 pF @ 25 V	-	-	4-DIP, Hexdip	-	1W (Tc)	-55°C ~ 150°C (TJ)
RF1S45N06SM N-CHANNEL POWER MOSFET Harris Corporation	700	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	45A	-	-	Surface Mount	-	-	60 V	-	-	-	-	TO-263AB	-	-	-
RFP15N05L MOSFET N-CH 50V 15A TO220-3 Harris Corporation	404	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	5V	140mOhm @ 15A, 5V	Through Hole	2V @ 250µA	-	50 V	±10V	900 pF @ 25 V	-	-	TO-220-3	-	60W (Tc)	-55°C ~ 150°C (TJ)
IRF9543 P-CHANNEL POWER MOSFET Harris Corporation	430	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	300mOhm @ 10A, 10V	Through Hole	4V @ 250µA	90 nC @ 10 V	80 V	±20V	1100 pF @ 25 V	-	-	TO-220-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
IRFBC42 N-CHANNEL POWER MOSFET Harris Corporation	1,000	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5.4A (Tc)	10V	1.6Ohm @ 3.4A, 10V	Through Hole	4V @ 250µA	60 nC @ 10 V	600 V	±20V	1300 pF @ 25 V	-	-	TO-220	-	125W (Tc)	-55°C ~ 150°C (TJ)
RF1S45N06LESM N-CHANNEL POWER MOSFET Harris Corporation	843	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	45A	-	-	Surface Mount	-	-	60 V	-	-	-	-	TO-263AB	-	-	-
IRFR9120 MOSFET P-CH 100V 5.6A DPAK Harris Corporation	975	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	100 V	±20V	390 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
IRF843 N-CHANNEL POWER MOSFET Harris Corporation	700	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	1.1Ohm @ 4.4A, 10V	Through Hole	4V @ 250µA	63 nC @ 10 V	450 V	±20V	1225 pF @ 25 V	-	-	TO-220	-	125W (Tc)	-55°C ~ 150°C (TJ)
RFH75N05 75A, 50V, 0.008OHM, N-CHANNEL, Harris Corporation	80	-	询价单	数据表	-	TO-218-3 Isolated Tab, TO-218AC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	-	-	-	Through Hole	-	-	50 V	-	-	-	-	TO-218 Isolated	-	-	-
RF1S530SM9A 14A, 100V, 0.16OHM, N-CHANNEL PO Harris Corporation	800	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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