Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 23

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFF433 N-CHANNEL POWER MOSFET Harris Corporation	250	-	询价单	数据表	-	TO-205AF Metal Can	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.25A (Tc)	10V	2Ohm @ 1.5A, 10V	Through Hole	4V @ 250µA	30 nC @ 10 V	450 V	±20V	600 pF @ 25 V	-	-	TO-205AF (TO-39)	-	25W (Tc)	-55°C ~ 150°C (TJ)
IRFP440 MOSFET N-CH 500V 8.8A TO247-3 Harris Corporation	1,892	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.8A (Tc)	10V	850mOhm @ 5.3A, 10V	Through Hole	4V @ 250µA	63 nC @ 10 V	500 V	±20V	1300 pF @ 25 V	-	-	TO-247AC	-	150W (Tc)	-55°C ~ 150°C (TJ)
IRFF111 N-CHANNEL POWER MOSFET Harris Corporation	176	-	询价单	数据表	-	TO-205AF Metal Can	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.5A (Tc)	10V	600mOhm @ 1.5A, 10V	Through Hole	4V @ 250µA	7.5 nC @ 10 V	80 V	±20V	135 pF @ 25 V	-	-	TO-205AF (TO-39)	-	15W (Tc)	-55°C ~ 150°C (TJ)
IRF244 N-CHANNEL POWER MOSFET Harris Corporation	26,290	-	询价单	数据表	-	TO-204AA, TO-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8.8A (Tc)	10V	280mOhm @ 8A, 10V	Through Hole	4V @ 250µA	59 nC @ 10 V	250 V	±20V	1300 pF @ 25 V	-	-	TO-3	-	125W (Tc)	-55°C ~ 150°C (TJ)
RF1S4N100SM9A MOSFET N-CH 1000V 4.3A TO263AB Harris Corporation	187	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	-	3.5Ohm @ 2.5A, 10V	Surface Mount	4V @ 250µA	-	1000 V	±20V	-	-	-	TO-263AB	-	150W (Tc)	-55°C ~ 150°C (TJ)
RFH30N12 N-CHANNEL POWER MOSFET Harris Corporation	268	-	询价单	数据表	-	TO-218-3 Isolated Tab, TO-218AC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	75mOhm @ 15A, 10V	Through Hole	4V @ 1mA	-	120 V	±20V	3000 pF @ 25 V	-	-	TO-218 Isolated	-	150W (Tc)	-55°C ~ 150°C (TJ)
JANSR2N7292 25A, 100V, 0.070 OHM, RAD HARD, Harris Corporation	1	-	询价单	数据表	-	TO-254-3, TO-254AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	70mOhm @ 20A, 10V	Through Hole	5V @ 1mA	552 nC @ 20 V	100 V	±20V	-	-	-	TO-254AA	-	125W (Tc)	-55°C ~ 150°C (TJ)
IRFP451 N-CHANNEL POWER MOSFET Harris Corporation	538	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	400mOhm @ 7.9A, 10V	Through Hole	4V @ 250µA	130 nC @ 10 V	450 V	±20V	2000 pF @ 25 V	-	-	TO-247	-	180W (Tc)	-55°C ~ 150°C (TJ)
RFH30N15 N-CHANNEL POWER MOSFET Harris Corporation	1,417	-	询价单	数据表	-	TO-218-3 Isolated Tab, TO-218AC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	75mOhm @ 15A, 10V	Through Hole	4V @ 1mA	-	150 V	±20V	3000 pF @ 25 V	-	-	TO-218 Isolated	-	150W (Tc)	-55°C ~ 150°C (TJ)
RFH10N50 N-CHANNEL POWER MOSFET Harris Corporation	302	-	询价单	数据表	-	TO-218-3 Isolated Tab, TO-218AC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	600mOhm @ 5A, 10V	Through Hole	4V @ 1mA	-	500 V	±20V	3000 pF @ 25 V	-	-	TO-218 Isolated	-	150W (Tc)	-55°C ~ 150°C (TJ)

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