Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 27

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFF322 N-CHANNEL POWER MOSFET Harris Corporation	500	-	询价单	数据表	-	TO-205AF Metal Can	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	2.5Ohm @ 1.25A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	400 V	20V	450 pF @ 25 V	-	-	TO-205AF (TO-39)	-	20W (Tc)	-55°C ~ 150°C (TJ)
RF1S23N06LESM9A N-CHANNEL POWER MOSFET Harris Corporation	800	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF76629D3S MOSFET N-CH 100V 20A TO252AA Harris Corporation	458	-	询价单	数据表	UltraFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	4.5V, 10V	52mOhm @ 20A, 10V	Surface Mount	3V @ 250µA	46 nC @ 10 V	100 V	±16V	1285 pF @ 25 V	-	-	TO-252 (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IRF543 N-CHANNEL POWER MOSFET Harris Corporation	965	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	100mOhm @ 17A, 10V	Through Hole	4V @ 250µA	59 nC @ 10 V	80 V	±20V	1450 pF @ 25 V	-	-	TO-220AB	-	150W (Tc)	-55°C ~ 175°C (TJ)
IRF121-0001 9.2A, 80V, 0.27OHM, N CHANNEL MO Harris Corporation	500	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RF1S42N03L 42A, 30V, 0.025 OHMS, N-CHANNEL Harris Corporation	400	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	5V	25mOhm @ 42A, 5V	Through Hole	2V @ 250µA	60 nC @ 10 V	30 V	±10V	1650 pF @ 25 V	-	-	TO-262 (I2PAK)	-	90W (Tc)	-55°C ~ 175°C (TJ)
RFL1N12 N-CHANNEL POWER MOSFET Harris Corporation	845	-	询价单	数据表	-	TO-205AF Metal Can	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1A (Tc)	10V	1.9Ohm @ 1A, 10V	Through Hole	4V @ 250µA	-	120 V	±20V	200 pF @ 25 V	-	-	TO-205AF (TO-39)	-	8.33W (Tc)	-55°C ~ 150°C (TJ)
IRFR420 2.5A 500V 3.000 OHM N-CHANNEL Harris Corporation	690	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.4A (Tc)	10V	3Ohm @ 1.4A, 10V	Surface Mount	4V @ 250µA	19 nC @ 10 V	500 V	±20V	360 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)
IRF642R N-CHANNEL POWER MOSFET Harris Corporation	500	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	220mOhm @ 10A, 10V	Through Hole	4V @ 250µA	64 nC @ 10 V	200 V	±20V	1275 pF @ 25 V	-	-	TO-220AB	-	125W (Tc)	-55°C ~ 150°C (TJ)
RF1S45N03L N-CHANNEL POWER MOSFET Harris Corporation	770	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	5V	22mOhm @ 45A, 5V	Through Hole	2V @ 250µA	60 nC @ 10 V	30 V	±10V	1650 pF @ 25 V	-	-	I2PAK (TO-262)	-	90W (Tc)	-55°C ~ 175°C (TJ)

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