Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 18

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFP341 N-CHANNEL POWER MOSFET Harris Corporation	233	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	550mOhm @ 5.5A, 10V	Through Hole	4V @ 250µA	63 nC @ 10 V	350 V	±20V	1250 pF @ 25 V	-	-	TO-247	-	150W (Tc)	-55°C ~ 150°C (TJ)
BUZ21 MOSFET N-CH 100V 21A TO220AB Harris Corporation	42,976	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	-	85mOhm @ 13A, 10V	Through Hole	4V @ 1mA	-	100 V	-	1300 pF @ 25 V	-	-	TO-220AB	-	-	-
BUZ41A N-CHANNEL POWER MOSFET Harris Corporation	6,850	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	1.5Ohm @ 2.5A, 10V	Through Hole	4V @ 1mA	-	500 V	±20V	2000 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
RFP70N03 MOSFET N-CH 30V 70A TO220-3 Harris Corporation	5,567	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	-	10mOhm @ 70A, 10V	Through Hole	4V @ 250µA	260 nC @ 20 V	30 V	-	3300 pF @ 25 V	-	-	TO-220-3	-	-	-
IRF731 N-CHANNEL POWER MOSFET Harris Corporation	3,759	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1Ohm @ 3A, 10V	Through Hole	4V @ 250µA	35 nC @ 10 V	350 V	±20V	600 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
IRFP340 MOSFET N-CH 400V 11A TO247-3 Harris Corporation	1,024	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	550mOhm @ 6.6A, 10V	Through Hole	4V @ 250µA	62 nC @ 10 V	400 V	±20V	1400 pF @ 25 V	-	-	TO-247AC	-	150W (Tc)	-55°C ~ 150°C (TJ)
IRFP150 MOSFET N-CH 100V 41A TO247-3 Harris Corporation	12,541	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	41A (Tc)	10V	55mOhm @ 25A, 10V	Through Hole	4V @ 250µA	140 nC @ 10 V	100 V	±20V	2800 pF @ 25 V	-	-	TO-247AC	-	230W (Tc)	-55°C ~ 175°C (TJ)
IRFD323 N-CHANNEL POWER MOSFET Harris Corporation	982	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	400mA (Tc)	10V	2.5Ohm @ 250mA, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	350 V	±20V	455 pF @ 25 V	-	-	4-DIP, Hexdip	-	1W (Tc)	-55°C ~ 150°C (TJ)
RFG40N10 N-CHANNEL POWER MOSFET Harris Corporation	752	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	10V	40mOhm @ 40A, 10V	Through Hole	4V @ 250µA	300 nC @ 20 V	100 V	±20V	-	-	-	TO-247-3	-	160W (Tc)	-55°C ~ 175°C (TJ)
IRF9632 P-CHANNEL POWER MOSFET Harris Corporation	455	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1.2Ohm @ 3.5A, 10V	Through Hole	4V @ 250µA	45 nC @ 10 V	200 V	±20V	550 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)

共 283 条记录«上一页 1... 14 15 16 171819 20 21...29 下一页»