Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 16

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RFP7N35 N-CHANNEL POWER MOSFET Harris Corporation	1,200	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	750mOhm @ 3.5A, 10V	Through Hole	4V @ 1mA	-	350 V	±20V	1600 pF @ 25 V	-	-	TO-220	-	75W (Tc)	-55°C ~ 150°C (TJ)
RFD16N05L N-CHANNEL POWER MOSFET Harris Corporation	31,022	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	4V, 5V	47mOhm @ 16A, 5V	Through Hole	2V @ 250mA	80 nC @ 10 V	50 V	±10V	-	-	-	TO-251AA	-	60W (Tc)	-55°C ~ 150°C (TJ)
RF1S540 28A, 100V, 0.077 OHM, N-CHANNEL Harris Corporation	4,101	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	77mOhm @ 17A, 10V	Through Hole	4V @ 250µA	59 nC @ 10 V	100 V	±20V	1450 pF @ 25 V	-	-	TO-262 (I2PAK)	-	150W (Tc)	-55°C ~ 175°C (TJ)
HUF76139S3 N-CHANNEL POWER MOSFET Harris Corporation	800	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	4.5V, 10V	7.5mOhm @ 75A, 10V	Through Hole	3V @ 250µA	78 nC @ 10 V	30 V	±16V	2700 pF @ 25 V	-	-	I2PAK (TO-262)	-	200W (Tc)	-55°C ~ 175°C (TJ)
RFG40N10LE N-CHANNEL POWER MOSFET Harris Corporation	489	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFF9122 P-CHANNEL POWER MOSFET Harris Corporation	422	-	询价单	数据表	-	TO-205AF Metal Can	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3.5A (Tc)	-	-	Through Hole	-	-	100 V	-	-	-	-	TO-205AF (TO-39)	-	20W	-
RFP42N03L MOSFET N-CH 30V 42A TO220AB Harris Corporation	63,600	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	-	25mOhm @ 42A, 5V	Through Hole	2V @ 250µA	60 nC @ 10 V	30 V	±10V	1650 pF @ 25 V	-	-	TO-220AB	-	90W (Tc)	-55°C ~ 175°C (TJ)
IRF730 N-CHANNEL, MOSFET Harris Corporation	24,025	-	询价单	数据表	PowerMESH™ II	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1Ohm @ 3A, 10V	Through Hole	4V @ 250µA	24 nC @ 10 V	400 V	±20V	530 pF @ 25 V	-	-	TO-220	-	100W (Tc)	150°C (TJ)
IRFD310 0.4A 400V 3.600 OHM N-CHANNEL Harris Corporation	3,189	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	350mA (Ta)	10V	3.6Ohm @ 210mA, 10V	Through Hole	4V @ 250µA	17 nC @ 10 V	400 V	±20V	170 pF @ 25 V	-	-	4-DIP, Hexdip, HVMDIP	-	1W (Ta)	-55°C ~ 150°C (TJ)
RF1S9640 MOSFET P-CH 200V 11A TO220AB Harris Corporation	4,500	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	11A (Tc)	-	500mOhm @ 6A, 10V	Through Hole	4V @ 250µA	90 nC @ 10 V	200 V	±20V	1100 pF @ 25 V	-	-	TO-220AB	-	125W (Tc)	-55°C ~ 150°C (TJ)

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