Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 17

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF831 N-CHANNEL POWER MOSFET Harris Corporation	1,610	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	1.5Ohm @ 2.5A, 10V	Through Hole	4V @ 250µA	32 nC @ 10 V	450 V	±20V	600 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
RFP7N40 N-CHANNEL POWER MOSFET Harris Corporation	471	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	750mOhm @ 3.5A, 10V	Through Hole	4V @ 1mA	-	400 V	±20V	1600 pF @ 25 V	-	-	TO-220	-	75W (Tc)	-55°C ~ 150°C (TJ)
IRF9530 MOSFET P-CH 100V 12A TO220AB Harris Corporation	3,295	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	-	300mOhm @ 6.5A, 10V	Through Hole	4V @ 250µA	45 nC @ 10 V	100 V	±20V	500 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
IRFP141 N-CHANNEL POWER MOSFET Harris Corporation	288	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	77mOhm @ 19A, 10V	Through Hole	4V @ 250µA	59 nC @ 10 V	80 V	±20V	1275 pF @ 25 V	-	-	TO-247	-	180W (Tc)	-55°C ~ 175°C (TJ)
RFP15P05 MOSFET P-CH 50V 15A TO220-3 Harris Corporation	88,449	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	150mOhm @ 15A, 10V	Through Hole	4V @ 250µA	150 nC @ 20 V	50 V	±20V	1150 pF @ 25 V	-	-	TO-220-3	-	80W (Tc)	-55°C ~ 175°C (TJ)
IRF632 N-CHANNEL POWER MOSFET Harris Corporation	16,865	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	600mOhm @ 5A, 10V	Through Hole	4V @ 250µA	30 nC @ 10 V	200 V	±20V	600 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
IRF9630 MOSFET P-CH 200V 6.5A TO220AB Harris Corporation	16,310	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	6.5A (Tc)	10V	800mOhm @ 3.9A, 10V	Through Hole	4V @ 250µA	29 nC @ 10 V	200 V	±20V	700 pF @ 25 V	-	-	TO-220AB	-	74W (Tc)	-55°C ~ 150°C (TJ)
IRFPC40 6.8A 600V 1.200 OHM N-CHANNEL Harris Corporation	968	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	6.8A (Tc)	10V	1.2Ohm @ 4.1A, 10V	Through Hole	4V @ 250µA	60 nC @ 10 V	600 V	±20V	1300 pF @ 25 V	-	-	TO-247-3	-	150W (Tc)	-55°C ~ 150°C (TJ)
RF1S40N10SM N-CHANNEL POWER MOSFET Harris Corporation	300	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40A	-	-	Surface Mount	-	-	100 V	-	-	-	-	TO-263AB	-	-	-
HUF75639S3 MOSFET N-CH 100V 56A I2PAK Harris Corporation	5,257	-	询价单	数据表	UltraFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	25mOhm @ 56A, 10V	Through Hole	4V @ 250µA	130 nC @ 20 V	100 V	±20V	2000 pF @ 25 V	-	-	TO-262 (I2PAK)	-	200W (Tc)	-55°C ~ 175°C (TJ)

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