Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 14

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RF1S630SM N-CHANNEL POWER MOSFET Harris Corporation	2,098	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	400mOhm @ 5A, 10V	Surface Mount	4V @ 250µA	30 nC @ 10 V	200 V	±20V	600 pF @ 25 V	-	-	TO-263AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
IRF647 N-CHANNEL POWER MOSFET Harris Corporation	1,595	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	340mOhm @ 8A, 10V	Surface Mount	4V @ 250µA	59 nC @ 10 V	275 V	±20V	1300 pF @ 25 V	-	-	TO-263 (D2PAK)	-	125W (Tc)	-55°C ~ 150°C (TJ)
RF1S9630SM P-CHANNEL POWER MOSFET Harris Corporation	1,650	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	6.5A	-	-	Surface Mount	-	-	200 V	-	-	-	-	TO-263AB	-	-	-
RF1S50N06LE N-CHANNEL POWER MOSFET Harris Corporation	4,042	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RF1S630SM9A N-CHANNEL POWER MOSFET Harris Corporation	4,000	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	400mOhm @ 5A, 10V	Surface Mount	4V @ 250µA	30 nC @ 10 V	200 V	±20V	600 pF @ 25 V	-	-	TO-263AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
RFG45N06 N-CHANNEL POWER MOSFET Harris Corporation	2,175	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	10V	28mOhm @ 45A, 10V	Through Hole	4V @ 250µA	150 nC @ 20 V	60 V	±20V	2050 pF @ 25 V	-	-	TO-247	-	131W (Tc)	-55°C ~ 175°C (TJ)
RFP50N06 MOSFET N-CH 60V 50A TO220-3 Harris Corporation	665	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	22mOhm @ 50A, 10V	Through Hole	4V @ 250µA	150 nC @ 20 V	60 V	±20V	2020 pF @ 25 V	-	-	TO-220-3	-	131W (Tc)	-55°C ~ 175°C (TJ)
HUF75343S3 75 A, 55 V, 0.009 OHM, N-CHANNEL Harris Corporation	557	-	询价单	数据表	UltraFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	9mOhm @ 75A, 10V	Through Hole	4V @ 250µA	205 nC @ 20 V	55 V	±20V	3000 pF @ 25 V	-	-	I2PAK (TO-262)	-	270W (Tc)	-55°C ~ 175°C (TJ)
RFP18N08 N-CHANNEL, MOSFET Harris Corporation	4,075	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	100mOhm @ 9A, 10V	Through Hole	4V @ 1mA	-	80 V	±20V	1700 pF @ 25 V	-	-	TO-220	-	75W (Tc)	-55°C ~ 150°C (TJ)
RFL4N15 SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation	1,145	-	询价单	数据表	-	TO-205AF Metal Can	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	400mOhm @ 2A, 10V	Through Hole	4V @ 1mA	-	150 V	±20V	850 pF @ 25 V	-	-	TO-205AF (TO-39)	-	8.33W (Tc)	-55°C ~ 150°C (TJ)

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