富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RFP17N06L

RFP17N06L

N-CHANNEL, MOSFET

Harris Corporation

2,275 -
RFP17N06L

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 4V, 5V 130mOhm @ 17A, 5V Through Hole 2V @ 1mA 45 nC @ 30 V 60 V ±10V - - - TO-220AB - 60W (Tc) -55°C ~ 150°C (TJ)
RFD16N03LSM

RFD16N03LSM

N-CHANNEL POWER MOSFET

Harris Corporation

1,964 -
RFD16N03LSM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 16A - - Surface Mount - - 30 V - - - - TO-252 (DPAK) - - -
RFP15N12

RFP15N12

N-CHANNEL POWER MOSFET

Harris Corporation

10,952 -
RFP15N12

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 150mOhm @ 7.5A, 10V Through Hole 4V @ 1mA - 120 V ±20V 1700 pF @ 25 V - - TO-220-3 - 75W (Tc) -55°C ~ 150°C (TJ)
RF1S9630

RF1S9630

P-CHANNEL POWER MOSFET

Harris Corporation

2,400 -
RF1S9630

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RFP12N18

RFP12N18

N-CHANNEL POWER MOSFET

Harris Corporation

1,550 -
RFP12N18

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 250mOhm @ 12A, 10V Through Hole 4V @ 250µA - 180 V ±20V 1700 pF @ 25 V - - TO-220-3 - 75W (Tc) -55°C ~ 150°C (TJ)
IRFF223

IRFF223

N-CHANNEL POWER MOSFET

Harris Corporation

1,395 -
IRFF223

数据表

- TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.2Ohm @ 2A, 10V Through Hole 4V @ 250µA 15 nC @ 10 V 150 V ±20V 450 pF @ 25 V - - TO-205AF (TO-39) - 20W (Tc) -55°C ~ 150°C (TJ)
IRFF211

IRFF211

N-CHANNEL POWER MOSFET

Harris Corporation

1,043 -
IRFF211

数据表

- TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 2.2A (Tc) 10V 1.5Ohm @ 1.25A, 10V Through Hole 4V @ 250µA 7.5 nC @ 10 V 150 V ±20V 135 pF @ 25 V - - TO-205AF (TO-39) - 15W (Tc) -55°C ~ 150°C (TJ)
IRFF221

IRFF221

N-CHANNEL POWER MOSFET

Harris Corporation

390 -
IRFF221

数据表

- TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 800mOhm @ 2A, 10V Through Hole 4V @ 250µA 15 nC @ 10 V 150 V ±20V 450 pF @ 25 V - - TO-205AF (TO-39) - 20W (Tc) -55°C ~ 150°C (TJ)
RFP10P12

RFP10P12

P-CHANNEL POWER MOSFET

Harris Corporation

300 -
RFP10P12

数据表

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 500mOhm @ 5A, 10V Through Hole 4V @ 1mA - 120 V ±20V 1700 pF @ 25 V - - TO-220 - 75W (Tc) -55°C ~ 150°C (TJ)
RFP10N12L

RFP10N12L

N-CHANNEL POWER MOSFET

Harris Corporation

54,904 -
RFP10N12L

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 5V 300mOhm @ 5A, 5V Through Hole - - 120 V ±10V 1200 pF @ 25 V - - TO-220-3 - 60W (Tc) -55°C ~ 150°C (TJ)
共 283 条记录«上一页1... 1112131415161718...29下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户