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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDS6690

FDS6690

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

4,985 -
FDS6690

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V Surface Mount 3V @ 250µA 18 nC @ 5 V 30 V ±20V 1340 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 150°C (TJ)
FDD6670AL_NL

FDD6670AL_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,176 -
FDD6670AL_NL

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V Surface Mount 3V @ 250µA 56 nC @ 5 V 30 V ±20V 3845 pF @ 15 V - - TO-252 (DPAK) - 1.6W (Ta) -55°C ~ 175°C (TJ)
FQI12N60CTU

FQI12N60CTU

MOSFET N-CH 600V 12A I2PAK

Fairchild Semiconductor

2,882 -
FQI12N60CTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 650mOhm @ 6A, 10V Through Hole 4V @ 250µA 63 nC @ 10 V 600 V ±30V 2290 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 225W (Tc) -55°C ~ 150°C (TJ)
FQAF19N20L

FQAF19N20L

MOSFET N-CH 200V 16A TO3PF

Fairchild Semiconductor

1,659 -
FQAF19N20L

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 5V, 10V 140mOhm @ 8A, 10V Through Hole 2V @ 250µA 35 nC @ 5 V 200 V ±20V 2200 pF @ 25 V - - TO-3PF - 85W (Tc) -55°C ~ 150°C (TJ)
FQAF9N50

FQAF9N50

MOSFET N-CH 500V 7.2A TO3PF

Fairchild Semiconductor

673 -
FQAF9N50

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.2A (Tc) 10V 730mOhm @ 3.6A, 10V Through Hole 5V @ 250µA 36 nC @ 10 V 500 V ±30V 1450 pF @ 25 V - - TO-3PF - 90W (Tc) -55°C ~ 150°C (TJ)
HRF3205_NL

HRF3205_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

392 -
HRF3205_NL

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 8mOhm @ 59A, 10V Through Hole 4V @ 250µA 170 nC @ 10 V 55 V ±20V 4000 pF @ 25 V - - TO-220-3 - 175W (Tc) -55°C ~ 175°C (TJ)
ISL9N2357D3ST

ISL9N2357D3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

67,500 -
ISL9N2357D3ST

数据表

UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 7mOhm @ 35A, 10V Surface Mount 4V @ 250µA 258 nC @ 20 V 30 V ±20V 5600 pF @ 25 V - - TO-252 (DPAK) - 100W (Tc) -55°C ~ 175°C (TJ)
HUFA75343G3

HUFA75343G3

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor

821 -
HUFA75343G3

数据表

UltraFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 9mOhm @ 75A, 10V Through Hole 4V @ 250µA 205 nC @ 20 V 55 V ±20V 3000 pF @ 25 V - - TO-247 - 270W (Tc) -55°C ~ 175°C (TJ)
HUFA75639S3ST-F085A

HUFA75639S3ST-F085A

MOSFET N-CH 100V 56A D2PAK

Fairchild Semiconductor

497 -
HUFA75639S3ST-F085A

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 56A (Tc) - 25mOhm @ 56A, 10V Surface Mount 4V @ 250µA 130 nC @ 20 V 100 V ±20V 2000 pF @ 25 V - - TO-263 (D2PAK) - 200W (Tc) -55°C ~ 175°C (TJ)
FDD6030BL

FDD6030BL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

66,201 -
FDD6030BL

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Ta), 42A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V Surface Mount 3V @ 250µA 31 nC @ 10 V 30 V ±20V 1143 pF @ 15 V - - TO-252 (DPAK) - 1.6W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
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