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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFS654B

IRFS654B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9,856 -
IRFS654B

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 21A (Tj) 10V 140mOhm @ 10.5A, 10V Through Hole 4V @ 250µA 123 nC @ 10 V 250 V ±30V 3400 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
FDU2572

FDU2572

MOSFET N-CH 150V 4A/29A IPAK

Fairchild Semiconductor

7,855 -
FDU2572

数据表

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta), 29A (Tc) 6V, 10V 54mOhm @ 9A, 10V Through Hole 4V @ 250µA 34 nC @ 10 V 150 V ±20V 1770 pF @ 25 V - - IPAK - 135W (Tc) -55°C ~ 175°C (TJ)
NDB4060L

NDB4060L

MOSFET N-CH 60V 15A D2PAK

Fairchild Semiconductor

1,600 -
NDB4060L

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 5V, 10V 80mOhm @ 15A, 10V Surface Mount 2V @ 250µA 17 nC @ 5 V 60 V ±16V 600 pF @ 25 V - - TO-263 (D2PAK) - 50W (Tc) -65°C ~ 175°C (TJ)
HUF75343S3

HUF75343S3

MOSFET N-CH 55V 75A I2PAK

Fairchild Semiconductor

540 -
HUF75343S3

数据表

UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 9mOhm @ 75A, 10V Through Hole 4V @ 250µA 205 nC @ 20 V 55 V ±20V 3000 pF @ 25 V - - TO-262 (I2PAK) - 270W (Tc) -55°C ~ 175°C (TJ)
FDD6670AL

FDD6670AL

MOSFET N-CH 30V 84A DPAK

Fairchild Semiconductor

44,372 -
FDD6670AL

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V Surface Mount 3V @ 250µA 56 nC @ 5 V 30 V ±20V 3845 pF @ 15 V - - TO-252 (DPAK) - 83W (Ta) -55°C ~ 175°C (TJ)
FQA7N80C

FQA7N80C

MOSFET N-CH 800V 7A TO3P

Fairchild Semiconductor

21,325 -
FQA7N80C

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V Through Hole 5V @ 250µA 35 nC @ 10 V 800 V ±30V 1680 pF @ 25 V - - TO-3P - 198W (Tc) -55°C ~ 150°C (TJ)
HUFA76633S3ST

HUFA76633S3ST

MOSFET N-CH 100V 39A D2PAK

Fairchild Semiconductor

17,119 -
HUFA76633S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V Surface Mount 3V @ 250µA 67 nC @ 10 V 100 V ±16V 1820 pF @ 25 V - - TO-263 (D2PAK) - 145W (Tc) -55°C ~ 175°C (TJ)
FDMS2510SDC

FDMS2510SDC

MOSFET N-CH 25V 28A/49A DLCOOL56

Fairchild Semiconductor

14,256 -
FDMS2510SDC

数据表

Dual Cool™, PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 28A (Ta), 49A (Tc) 4.5V, 10V 2.9mOhm @ 23A, 10V Surface Mount 3V @ 1mA 45 nC @ 10 V 25 V ±20V 2780 pF @ 13 V - - 8-PQFN (5x6) - 3.3W (Ta), 60W (Tc) -55°C ~ 150°C (TJ)
FQU3P20TU

FQU3P20TU

MOSFET P-CH 200V 2.4A IPAK

Fairchild Semiconductor

13,384 -
FQU3P20TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 2.7Ohm @ 1.2A, 10V Through Hole 5V @ 250µA 8 nC @ 10 V 200 V ±30V 250 pF @ 25 V - - IPAK - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ)
SI6433DQ

SI6433DQ

P-CHANNEL MOSFET

Fairchild Semiconductor

11,967 -
SI6433DQ

数据表

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 1.8V, 4.5V 47mOhm @ 4.5A, 4.5V Surface Mount 1.5V @ 250µA 18 nC @ 4.5 V 20 V ±8V 1193 pF @ 10 V - - 8-TSSOP - 600mW (Ta) -55°C ~ 150°C (TJ)
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