Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 124

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FQU2N90TU-AM002 MOSFET N-CH 900V 1.7A I-PAK Fairchild Semiconductor	977	-	询价单	数据表	QFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	10V	7.2Ohm @ 850mA, 10V	Through Hole	5V @ 250µA	15 nC @ 10 V	900 V	±30V	500 pF @ 25 V	-	-	IPAK	-	2.5W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
IRFW550ATM 40A, 100V, 0.04OHM, N-CHANNEL MO Fairchild Semiconductor	847	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQI50N06TU MOSFET N-CH 60V 50A I2PAK Fairchild Semiconductor	841	-	询价单	数据表	QFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	22mOhm @ 25A, 10V	Through Hole	4V @ 250µA	41 nC @ 10 V	60 V	±25V	1540 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.75W (Ta), 120W (Tc)	-55°C ~ 175°C (TJ)
FDPF6N60ZUT MOSFET N-CH 600V 4.5A TO220F Fairchild Semiconductor	450	-	询价单	数据表	UniFET™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	2Ohm @ 2.25A, 10V	Through Hole	5V @ 250µA	20 nC @ 10 V	600 V	±30V	865 pF @ 25 V	-	-	TO-220F-3	-	33.8W (Tc)	-55°C ~ 150°C (TJ)
FDPF5N50NZU MOSFET N-CH 500V 3.9A TO220F Fairchild Semiconductor	673	-	询价单	数据表	UniFET-II™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.9A (Tc)	10V	2Ohm @ 1.95A, 10V	Through Hole	5V @ 250µA	12 nC @ 10 V	500 V	±25V	485 pF @ 25 V	-	-	TO-220F-3	-	30W (Tc)	-55°C ~ 150°C (TJ)
FQPF7N65CYDTU POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor	800	-	询价单	数据表	QFET®	TO-220-3 Full Pack, Formed Leads	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	1.4Ohm @ 3.5A, 10V	Through Hole	4V @ 250µA	36 nC @ 10 V	650 V	±30V	1245 pF @ 25 V	-	-	TO-220F-3 (Y-Forming)	-	52W (Tc)	-55°C ~ 150°C (TJ)
FQPF9P25YDTU MOSFET P-CH 250V 6A TO220F-3 Fairchild Semiconductor	705	-	询价单	数据表	QFET®	TO-220-3 Full Pack, Formed Leads	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	620mOhm @ 3A, 10V	Through Hole	5V @ 250µA	38 nC @ 10 V	250 V	±30V	1180 pF @ 25 V	-	-	TO-220F-3 (Y-Forming)	-	50W (Tc)	-55°C ~ 150°C (TJ)
FDPF10N50FT POWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor	1,000	-	询价单	数据表	UniFET™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	850mOhm @ 4.5A, 10V	Through Hole	5V @ 250µA	24 nC @ 10 V	500 V	±30V	1170 pF @ 25 V	-	-	TO-220F-3	-	42W (Tc)	-55°C ~ 150°C (TJ)
IRF654B IRF654B - 21A, 250V, 0.14OHM, N- Fairchild Semiconductor	447	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDPF12N50NZ POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	1,000	-	询价单	数据表	UniFET-II™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Tc)	10V	520mOhm @ 5.75A, 10V	Through Hole	5V @ 250µA	30 nC @ 10 V	500 V	±25V	1235 pF @ 25 V	-	-	TO-220F-3	-	42W (Tc)	-55°C ~ 150°C (TJ)

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