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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP4NA1R4CMT-A

XP4NA1R4CMT-A

MOSFET N-CH 45V 49A 223A PMPAK

YAGEO XSEMI

1,000 -
XP4NA1R4CMT-A

数据表

XP4NA1R4C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 49A (Ta), 223A (Tc) 4.5V, 10V 1.4mOhm @ 20A, 10V Surface Mount 3V @ 250µA 75.2 nC @ 4.5 V 45 V ±20V 7200 pF @ 20 V - - PMPAK® 5 x 6 - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP60SA290DH

XP60SA290DH

MOSFET N-CH 600V 13.3A TO252

YAGEO XSEMI

991 -
XP60SA290DH

数据表

XP60SA290D TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.3A (Tc) 10V 290mOhm @ 5.8A, 10V Surface Mount 5V @ 250µA 48 nC @ 10 V 600 V ±20V 1632 pF @ 100 V - - TO-252 - 2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP6NA1R7CMT

XP6NA1R7CMT

FET N-CH 60V 41.6A 190A PMPAK

YAGEO XSEMI

1,000 -
XP6NA1R7CMT

数据表

XP6NA1R7C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 20A, 10V Surface Mount 4V @ 250µA 160 nC @ 10 V 60 V ±20V 8800 pF @ 50 V - - PMPAK® 5 x 6 - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP4NAR95CMT-A

XP4NAR95CMT-A

MOSFET N-CH 45V 58A 100A PMPAK

YAGEO XSEMI

1,000 -
XP4NAR95CMT-A

数据表

XP4NAR95 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 58A (Ta), 100A (Tc) 4.5V, 10V 0.95mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 89.6 nC @ 4.5 V 45 V ±20V 8880 pF @ 30 V - - PMPAK® 5 x 6 - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP6NA2R4IT

XP6NA2R4IT

MOSFET N-CH 60V 93A TO220CFM

YAGEO XSEMI

1,000 -
XP6NA2R4IT

数据表

XP6NA2R4 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 93A (Tc) 10V 2.4mOhm @ 40A, 10V Through Hole 4V @ 250µA 192 nC @ 10 V 60 V ±20V 11600 pF @ 50 V - - TO-220CFM - 1.92W (Ta), 34.7W (Tc) -55°C ~ 150°C (TJ)
XP10N3R8P

XP10N3R8P

MOSFET N-CH 100V 130A TO220

YAGEO XSEMI

991 -
XP10N3R8P

数据表

XP10N3R8 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 3.88mOhm @ 60A, 10V Through Hole 4V @ 250µA 136 nC @ 10 V 100 V ±20V 6560 pF @ 80 V - - TO-220 - 2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
XP3P3R0MT

XP3P3R0MT

FET P-CH 30V 33.5A 125A PMPAK

YAGEO XSEMI

976 -
XP3P3R0MT

数据表

XP3P3R0 8-PowerLDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 33.5A (Ta), 125A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V Surface Mount 3V @ 250µA 122 nC @ 4.5 V 30 V ±20V 15040 pF @ 15 V - - PMPAK® 5 x 6 - 5W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ)
XP10N3R5XT

XP10N3R5XT

FET N-CH 100V 28.5A 100A PMPAK

YAGEO XSEMI

997 -
XP10N3R5XT

数据表

XP10N3R5 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28.5A (Ta), 100A (Tc) 10V 3.5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 134.4 nC @ 10 V 100 V ±20V 6480 pF @ 80 V - - PMPAK® 5 x 6 - 5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
XP65SL380DH

XP65SL380DH

MOSFET N-CH 650V 10A TO252

YAGEO XSEMI

997 -
XP65SL380DH

数据表

XP65SL380D TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 380mOhm @ 3.2A, 10V Surface Mount 5V @ 250µA 52.8 nC @ 10 V 650 V ±20V 1860 pF @ 100 V - - TO-252 - 2W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ)
XP10N3R8IT

XP10N3R8IT

FET N-CH 100V 67.7A TO220CFM

YAGEO XSEMI

1,000 -
XP10N3R8IT

数据表

XP10N3R8 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 67.7A (Ta) 10V 3.88mOhm @ 35A, 10V Through Hole 4V @ 250µA 131 nC @ 10 V 100 V ±20V 6560 pF @ 80 V - - TO-220CFM - 1.92W (Ta), 32.8W (Tc) -55°C ~ 150°C (TJ)
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