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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP1504YT

XP1504YT

MOSFET N-CH 150V 5A 15.8A PMPAK

YAGEO XSEMI

997 -
XP1504YT

数据表

XP1504 8-PowerDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta), 15.8A (Tc) 10V 59mOhm @ 9A, 10V Surface Mount 4V @ 250µA 25.6 nC @ 10 V 150 V ±20V 984 pF @ 100 V - - PMPAK® 3 x 3 - 3.12W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
XP4N2R1MT

XP4N2R1MT

FET N-CH 40V 37.5A 170A PMPAK

YAGEO XSEMI

995 -
XP4N2R1MT

数据表

XP4N2R1 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 37.5A (Ta), 170A (Tc) 10V 2.1mOhm @ 20A, 10V Surface Mount 5V @ 250µA 154 nC @ 10 V 40 V ±20V 9056 pF @ 20 V - - PMPAK® 5 x 6 - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP4N2R5MT

XP4N2R5MT

FET N-CH 40V 33.8A 125A PMPAK

YAGEO XSEMI

1,000 -
XP4N2R5MT

数据表

XP4N2R5 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 33.8A (Ta), 125A (Tc) 10V 2.55mOhm @ 20A, 10V Surface Mount 4V @ 250µA 112 nC @ 10 V 40 V ±20V 6080 pF @ 20 V - - PMPAK® 5 x 6 - 5W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ)
XP10NA011J

XP10NA011J

MOSFET N-CH 100V 48.5A TO251S

YAGEO XSEMI

962 -
XP10NA011J

数据表

XS10NA011 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 48.5A (Tc) 6V, 10V 11mOhm @ 30A, 10V Through Hole 4V @ 250µA 56 nC @ 10 V 100 V ±20V 2288 pF @ 80 V - - TO-251S - 1.13W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP60SA290DIT

XP60SA290DIT

MOSFET N CH 600V 13.3A TO-220CF

YAGEO XSEMI

6,820 -
XP60SA290DIT

数据表

XP60SA290D TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.3A (Tc) 10V 290mOhm @ 5.8A, 10V Through Hole 4V @ 250µA 48 nC @ 10 V 600 V ±20V 1632 pF @ 100 V - - TO-220CFM - 1.92W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
XP3N1R0MT

XP3N1R0MT

FET N-CH 30V 54.2A 245A PMPAK

YAGEO XSEMI

998 -
XP3N1R0MT

数据表

XP3N1R0 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 54.2A (Ta), 245A (Tc) 4.5V, 10V 1.05mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 120 nC @ 4.5 V 30 V ±20V 12320 pF @ 15 V - - PMPAK® 5 x 6 - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP6NA3R5IT

XP6NA3R5IT

MOSFET N-CH 60V 72A TO220CFM

YAGEO XSEMI

1,000 -
XP6NA3R5IT

数据表

XP6NA3R5IT TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 72A (Tc) 10V 3.5mOhm @ 30A, 10V Through Hole 4V @ 250µA 125 nC @ 10 V 60 V ±20V 5440 pF @ 50 V - - TO-220CFM - 1.92W (Ta), 32.9W (Tc) -55°C ~ 150°C (TJ)
XP50AN1K5H

XP50AN1K5H

MOSFET N-CH 500V 5A TO252

YAGEO XSEMI

998 -
XP50AN1K5H

数据表

XP50AN1K5 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V Surface Mount 4V @ 250µA 24.6 nC @ 10 V 500 V ±30V 800 pF @ 100 V - - TO-252 - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP6NA6R5H

XP6NA6R5H

MOSFET N-CH 60V 66A TO252

YAGEO XSEMI

990 -
XP6NA6R5H

数据表

XP6NA6R5 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 66A (Tc) 6V, 10V 6.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 56 nC @ 10 V 60 V ±20V 2976 pF @ 50 V - - TO-252 - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP6NA3R0H

XP6NA3R0H

MOSFET N-CH 60V 75A TO252

YAGEO XSEMI

980 -
XP6NA3R0H

数据表

XP6NA3R0 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 3mOhm @ 40A, 10V Surface Mount 4V @ 250µA 112 nC @ 10 V 60 V ±20V 6520 pF @ 50 V - - TO-252 - 2W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ)
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