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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP3N5R0M

XP3N5R0M

MOSFET N-CH 30V 17.4A 8SO

YAGEO XSEMI

1,000 -
XP3N5R0M

数据表

XP3N5R0 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.4A (Ta) 4.5V 5mOhm @ 16A, 10V Surface Mount 3V @ 250µA 33.6 nC @ 4.5 V 30 V ±20V 3040 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP50SL290DH

XP50SL290DH

MOSFET N CH 500V 13A TO-252(H)

YAGEO XSEMI

8,478 -
XP50SL290DH

数据表

XP50SL290D TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 290mOhm @ 4A, 10V Surface Mount 5V @ 250µA 46.4 nC @ 10 V 500 V ±20V 1632 pF @ 100 V - - TO-252 - 2W (Ta), 89.2W (Tc) -55°C ~ 150°C (TJ)
XP4459M

XP4459M

MOSFET P-CH 30V 11.3A 8SO

YAGEO XSEMI

1,000 -
XP4459M

数据表

XP4459 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 11.3A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V Surface Mount 3V @ 250µA 64 nC @ 10 V 30 V ±20V 3360 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP10TN135K

XP10TN135K

MOSFET N-CH 100V 3A SOT223

YAGEO XSEMI

958 -
XP10TN135K

数据表

XP10TN135 TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 4.5V, 10V 135mOhm @ 3A, 10V Surface Mount 3V @ 250µA 20 nC @ 10 V 100 V ±20V 980 pF @ 25 V - - SOT-223 - 2.78W (Ta) -55°C ~ 150°C (TJ)
XP9561GH

XP9561GH

MOSFET P-CH 40V 45A TO252

YAGEO XSEMI

990 -
XP9561GH

数据表

XP9561 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 45A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V Surface Mount 3V @ 250µA 40 nC @ 4.5 V 40 V ±20V 2720 pF @ 25 V - - TO-252 - 54.3W (Tc) -55°C ~ 150°C (TJ)
XP4060CMT

XP4060CMT

MOSFET N-CH 30V 37A 100A PMPAK

YAGEO XSEMI

1,000 -
XP4060CMT

数据表

XP4060C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 37A (Ta), 100A (Tc) 4.5V, 10V 2.25mOhm @ 20A, 10V Surface Mount 3V @ 250µA 52.8 nC @ 10 V 30 V ±20V 3200 pF @ 25 V - - PMPAK® 5 x 6 - 5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
XP9565BGH

XP9565BGH

MOSFET P-CH 40V 17A TO252

YAGEO XSEMI

959 -
XP9565BGH

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 17A (Tc) 4.5V, 10V 52mOhm @ 8A, 10V Surface Mount 3V @ 250µA 12.5 nC @ 4.5 V 40 V ±20V 850 pF @ 25 V - - TO-252 - 25W (Tc) -55°C ~ 150°C (TJ)
XP6677GH

XP6677GH

MOSFET P-CH 40V 60A TO252

YAGEO XSEMI

992 -
XP6677GH

数据表

XP6677 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 12.3mOhm @ 30A, 10V Surface Mount 3V @ 250µA 70 nC @ 4.5 V 40 V ±20V 5050 pF @ 25 V - - TO-252 - 69W (Tc) -55°C ~ 150°C (TJ)
XP10NA8R4IT

XP10NA8R4IT

MOSFET N-CH 100V 44A TO220CFM

YAGEO XSEMI

1,000 -
XP10NA8R4IT

数据表

XP10NA8R4 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 8.4mOhm @ 24A, 10V Through Hole 4V @ 250µA 67.2 nC @ 10 V 100 V ±20V 3248 pF @ 80 V - - TO-220CFM - 1.92W (Ta), 32W (Tc) -55°C ~ 150°C (TJ)
XP3N1R8MT

XP3N1R8MT

FET N-CH 30V 40.6A 165A PMPAK

YAGEO XSEMI

973 -
XP3N1R8MT

数据表

XP3N1R8 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40.6A (Ta), 165A (Tc) 4.5V, 10V 1.89mOhm @ 20A, 10V Surface Mount 3V @ 250µA 60 nC @ 4.5 V 30 V ±20V 4850 pF @ 25 V - - PMPAK® 5 x 6 - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ)
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