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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP50AN1K5I

XP50AN1K5I

MOSFET N-CH 500V 5A TO220CFM

YAGEO XSEMI

1,000 -
XP50AN1K5I

数据表

XP50AN1K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.55Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 24.6 nC @ 10 V 500 V ±30V 800 pF @ 100 V - - TO-220CFM - 1.92W (Ta), 31.3W (Tc) -55°C ~ 150°C (TJ)
XP9575GH

XP9575GH

MOSFET P-CH 60V 15A TO252

YAGEO XSEMI

923 -
XP9575GH

数据表

XP9575 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 90mOhm @ 12A, 10V Surface Mount 3V @ 250µA 27 nC @ 4.5 V 60 V ±25V 2660 pF @ 25 V - - TO-252 - 31.3W (Tc) -55°C ~ 150°C (TJ)
XP65AN1K2IT

XP65AN1K2IT

MOSFET N-CH 650V 7A TO220CFM

YAGEO XSEMI

989 -
XP65AN1K2IT

数据表

XP65AN1K2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.2Ohm @ 3.5A, 10V Through Hole 4V @ 250µA 44.8 nC @ 10 V 650 V ±30V 2048 pF @ 100 V - - TO-220CFM - 1.92W (Ta), 34.7W (Tc) -55°C ~ 150°C (TJ)
XP60SL600DH

XP60SL600DH

MOSFET N-CH 600V 7A TO252

YAGEO XSEMI

997 -
XP60SL600DH

数据表

XP60SL600D TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 2A, 10V Surface Mount 5V @ 250µA 32 nC @ 10 V 600 V ±20V 1072 pF @ 100 V - - TO-252 - 2W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ)
XP1504MT

XP1504MT

FET N-CH 150V 6.3A 15.8A PMPAK

YAGEO XSEMI

1,000 -
XP1504MT

数据表

XP1504 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.3A (Ta), 15.8A (Tc) 10V 59mOhm @ 9A, 10V Surface Mount 4V @ 250µA 25.6 nC @ 10 V 150 V ±20V 984 pF @ 100 V - - PMPAK® 5 x 6 - 5W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
XP60AN750IN

XP60AN750IN

MOSFET N-CH 600V 10A TO220CFM

YAGEO XSEMI

1,000 -
XP60AN750IN

数据表

XP60AN750 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 750mOhm @ 5A, 10V Through Hole 4V @ 250µA 59.2 nC @ 10 V 600 V ±30V 2688 pF @ 100 V - - TO-220CFM - 1.92W (Ta), 36.7W (Tc) -55°C ~ 150°C (TJ)
XP70SL1K4AH

XP70SL1K4AH

MOSFET N-CH 700V 3.2A TO252

YAGEO XSEMI

998 -
XP70SL1K4AH

数据表

XP70SL1K4A TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.2A (Tc) 10V 1.4Ohm @ 1A, 10V Surface Mount 5V @ 250µA 16.8 nC @ 10 V 700 V ±20V 608 pF @ 100 V - - TO-252 - 2W (Ta), 28.4W (Tc) -55°C ~ 150°C (TJ)
XP3N9R5AH

XP3N9R5AH

MOSFET N-CH 30V 38.5A TO252

YAGEO XSEMI

992 -
XP3N9R5AH

数据表

XP3N9R5A TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 38.5A (Ta) 4.5V, 10V 9.5mOhm @ 20A, 10V Surface Mount 3V @ 250µA 14.4 nC @ 4.5 V 30 V ±20V 1280 pF @ 15 V - - TO-252 - 2W (Ta), 22.7W (Tc) -55°C ~ 150°C (TJ)
XP10TN135H

XP10TN135H

MOSFET N-CH 100V 8.1A TO252

YAGEO XSEMI

1,000 -
XP10TN135H

数据表

XP10TN135 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.1A (Tc) 4.5V, 10V 135mOhm @ 5A, 10V Surface Mount 3V @ 250µA 17.6 nC @ 10 V 100 V ±20V 928 pF @ 50 V - - TO-252 - 2W (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ)
XP4N4R2H

XP4N4R2H

MOSFET N-CH 40V 75A TO252

YAGEO XSEMI

990 -
XP4N4R2H

数据表

XP4N4R2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 4.2mOhm @ 40A, 10V Surface Mount 3V @ 250µA 44.8 nC @ 4.5 V 40 V ±20V 4000 pF @ 20 V - - TO-252 - 2W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
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