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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP3N2R8AMT

XP3N2R8AMT

MOSFET N-CH 30V 32.8A 60A PMPAK

YAGEO XSEMI

1,000 -
XP3N2R8AMT

数据表

XP3N2R8A 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 32.8A (Ta), 60A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V Surface Mount 3V @ 250µA 40 nC @ 4.5 V 30 V ±20V 4080 pF @ 15 V - - PMPAK® 5 x 6 - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP3R303GMT-L

XP3R303GMT-L

MOSFET N-CH 30V 31A 105A PMPAK

YAGEO XSEMI

1,000 -
XP3R303GMT-L

数据表

XP3R303 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 31A (Ta), 105A (Tc) 4.5V, 10V 3.3mOhm @ 30A, 10V Surface Mount 3V @ 250µA 21 nC @ 4.5 V 30 V ±20V 2240 pF @ 25 V - - PMPAK® 5 x 6 - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ)
XP83T03GJB

XP83T03GJB

MOSFET N-CH 30V 75A TO251S

YAGEO XSEMI

970 -
XP83T03GJB

数据表

XP83T03 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 6mOhm @ 40A, 10V Through Hole 3V @ 250µA 34 nC @ 4.5 V 30 V ±20V 1840 pF @ 25 V - - TO-251S - 60W (Tc) -55°C ~ 175°C (TJ)
XP4024EM

XP4024EM

MOSFET N-CH 30V 18.5A 8-SO

YAGEO XSEMI

975 -
XP4024EM

数据表

XP4024E 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18.5A (Ta) 4.5V, 10V 4.5mOhm @ 18A, 10V Surface Mount 3V @ 250µA 28 nC @ 4.5 V 30 V ±20V 2720 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP60SA380DIT

XP60SA380DIT

MOSFET N CH 600V 10A TO-220CFM-

YAGEO XSEMI

9,870 -
XP60SA380DIT

数据表

XP60SA380D TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 380mOhm @ 3.2A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 600 V ±20V 1216 pF @ 100 V - - TO-220CFM - 1.92W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
XP3NA2R4MT

XP3NA2R4MT

FET N-CH 30V 36.5A 118A PMPAK

YAGEO XSEMI

1,000 -
XP3NA2R4MT

数据表

XP3NA2R4 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36.5A (Ta), 118A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V Surface Mount 3V @ 250µA 65.6 nC @ 4.5 V 30 V ±20V 5600 pF @ 15 V - - PMPAK® 5 x 6 - 5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
XP3P7R0EM

XP3P7R0EM

MOSFET P-CH 30V 15.5A 8SO

YAGEO XSEMI

988 -
XP3P7R0EM

数据表

XP3P7R0E 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15.5A (Ta) 4.5V, 10V 7mOhm @ 17A, 10V Surface Mount 2V @ 250µA 52.8 nC @ 4.5 V 30 V ±25V 6880 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP3P010M

XP3P010M

MOSFET P-CH 30V 13.3A 8SO

YAGEO XSEMI

1,000 -
XP3P010M

数据表

XP3P010 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 13.3A (Ta) 4.5V, 10V 10mOhm @ 12A, 10V Surface Mount 3V @ 250µA 54.4 nC @ 4.5 V 30 V ±20V 6080 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP10P500N

XP10P500N

MOSFET P-CH 100V 1.2A SOT23

YAGEO XSEMI

897 -
XP10P500N

数据表

XP10P500 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.2A (Ta) 4.5V, 10V 500mOhm @ 1A, 10V Surface Mount 3V @ 250µA 17 nC @ 10 V 100 V ±20V 670 pF @ 50 V - - SOT-23 - 1.38W (Ta) -55°C ~ 150°C (TJ)
XP15NA9R3CXT

XP15NA9R3CXT

MOSFET N CH 150V 16.1A PMPAK5X6

YAGEO XSEMI

4,782 -
XP15NA9R3CXT

数据表

XP15NA9R3C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16.1A (Ta), 96A (Tc) 10V 9.3mOhm @ 20A, 10V Surface Mount 4V @ 250µA 109 nC @ 10 V 150 V ±20V 5280 pF @ 75 V - - 8-PMPAK (5x6) - 6W (Ta), 214.2W (Tc) -55°C ~ 175°C (TJ)
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